公开(公告)号：US20090045829A1

公开(公告)日：2009-02-19

申请号：US11496019

申请日：2006-07-31

申请人： Tomoyuki Awazu ,  Katsuhiro Itakura ,  Masuhiro Natsuhara ,  Hirohiko Nakata

发明人： Tomoyuki Awazu ,  Katsuhiro Itakura ,  Masuhiro Natsuhara ,  Hirohiko Nakata

IPC分类号： G01R31/26 ,  H05B3/68

CPC分类号： G01R31/2865 ,  G01R31/2875

摘要： It is an object of the present invention to provide a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith.A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top, wherein, a restricting member is provided that covers an interface between the chuck top and the support member. By covering the gap between the chuck top and the support member with the restricting member, the heat insulating effect can be increased by preventing the flow of outside air through the gap into the support member, and the cooling rate can be particularly improved if cooling to a temperature below room temperature.

摘要翻译： 本发明的目的是提供一种高度刚性的晶片探针晶片保持器，并且增加隔热效果，从而提高位置精度，热均匀性以及芯片温度升高和冷却速度，以及晶片探测器 装备的装置。 本发明的晶片保持器包括安装晶片的卡盘顶部和支撑卡盘顶部的支撑构件，其中设置有限制构件，该限制构件覆盖卡盘顶部和支撑构件之间的界面。 通过用限制构件覆盖卡盘顶部和支撑构件之间的间隙，可以通过防止外部空气通过间隙流入支撑构件而提高隔热效果，并且如果冷却至 温度低于室温。

公开(公告)号：US20070029740A1

公开(公告)日：2007-02-08

申请号：US11482101

申请日：2006-07-07

申请人： Masuhiro Natsuhara ,  Katsuhiro Itakura ,  Tomoyuki Awazu ,  Hirohiko Nakata ,  Akira Mikumo

发明人： Masuhiro Natsuhara ,  Katsuhiro Itakura ,  Tomoyuki Awazu ,  Hirohiko Nakata ,  Akira Mikumo

IPC分类号： B23B31/30

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  Y10T279/11

摘要： A wafer holding body for placing a semiconductor wafer, a method of manufacturing the same, and an device using the wafer holding body are provided, wherein a channel is formed in the wafer holding body.

摘要翻译： 提供了一种用于放置半导体晶片的晶片保持体，其制造方法和使用该晶片保持体的器件，其中在晶片保持体中形成沟道。

公开(公告)号：US20060201918A1

公开(公告)日：2006-09-14

申请号：US11339430

申请日：2006-01-26

申请人： Tomoyuki Awazu ,  Hirohiko Nakata ,  Akira Kuibira

发明人： Tomoyuki Awazu ,  Hirohiko Nakata ,  Akira Kuibira

IPC分类号： B23K9/00 ,  B23K9/02

CPC分类号： H01L21/67103

摘要： A heater that enables a more even temperature distribution in the time from commencement of heating until completion of cooling, and a device is equipped with the same, are provided. The heater for a semiconductor fabrication device of the present invention comprises a substrate having a heating surface that heats an article to be processed that is placed thereupon or separated therefrom by a set distance and a resistive heating element. The heat capacity of the substrate forms a distribution within the substrate. The substrate, or a portion thereof, is preferably made from one type of metal or a composite of two or more types of metal.

摘要翻译： 提供一种加热器，其能够在从开始加热到完成冷却的时间内实现更均匀的温度分布，并且装置配备有加热器。 本发明的半导体制造装置的加热器包括具有加热表面的基板，该加热表面加热被放置在其上或与其隔开一定距离的待加工物品和电阻加热元件。 衬底的热容量在衬底内形成分布。 基材或其一部分优选由一种金属或两种或更多种金属的复合材料制成。

公开(公告)号：US06301774B1

公开(公告)日：2001-10-16

申请号：US08906855

申请日：1997-08-06

申请人： Susumu Yamamoto ,  Teruyuki Murai ,  Nozomu Kawabe ,  Tomoyuki Awazu ,  Shuji Yazu ,  Tetsuji Jodai

发明人： Susumu Yamamoto ,  Teruyuki Murai ,  Nozomu Kawabe ,  Tomoyuki Awazu ,  Shuji Yazu ,  Tetsuji Jodai

IPC分类号： H01L3924

CPC分类号： H01L39/143 ,  H01L39/248 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704 ,  Y10T29/49014 ,  Y10T428/31678

摘要： A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermediate layer made of these precious metals is interposed between the compound oxide and the metal pipe. The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.

摘要翻译： 一种超导复合体，其包含复合氧化物型超导体和外部金属管，所述超导体被支撑在所述外部金属管上，其特征在于，（i）所述外部金属管由选自金，银和铂金属的金属中的至少一种制成 并且它们的合金或（ii）由这些贵金属制成的中间层插入在复合氧化物和金属管之间。复合材料可以是固体管或中空管的形式，其具有沉积在内部的超导薄层 金属管表面。

公开(公告)号：US5538927A

公开(公告)日：1996-07-23

申请号：US403122

申请日：1995-03-13

申请人： Yasushi Tsuzuki ,  Tomoyuki Awazu ,  Akira Yamakawa

发明人： Yasushi Tsuzuki ,  Tomoyuki Awazu ,  Akira Yamakawa

IPC分类号： C01B21/068 ,  C04B35/593 ,  C04B35/584

CPC分类号： C04B35/5935 ,  C01B21/0687 ,  C01P2004/32 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/22

摘要： A silicon nitride powder with which a highly reliable silicon nitride with high strength and small strength and dimensional variances is obtainable is disclosed. By setting the amount of their surface acidic groups per B.E.T. surface area to not less than 0.2 .mu.eq/m.sup.2, their dispersibility in a mixing solvent is drastically improved. By using them, moldings with high density and homogeneity can be obtained, thereby enabling in turn a highly reliable sintered product of silicon nitride with high strength and small strength and dimensional variances to be easily manufactured. Besides, in the silicon nitride powder, the proportion of the silicon [Si*] belonging to SiO.sub.2, of the surface silicon [Si], which is determined by the X-ray photoelectron spectroscopy (XPS), should be not less than 0.07 in its atomic ratio [Si*/Si] and that to silicon of the surface carbon [C] which is determined by XPS in the same way should be not more than 0.20 in its atomic ratio [C/Si].

摘要翻译： 公开了一种可获得具有高强度和小的强度和尺寸变化的高度可靠的氮化硅的氮化硅粉末。 通过设定每个B.E.T.的表面酸性基团的量。 表面积不小于0.2μeq / m2，其在混合溶剂中的分散性显着提高。 通过使用它们，可以获得高密度和均匀的模制品，从而可以容易地制造高可靠性，高强度和小的强度和尺寸变化的高可靠性的氮化硅烧结产品。 此外，在氮化硅粉末中，由X射线光电子能谱（XPS）确定的表面硅[Si]的属于SiO 2的硅[Si *]的比例应不小于0.07 其原子比[Si * / Si]和表面碳[C]的硅以相同的方式由XPS确定，其原子比[C / Si]应不大于0.20。

公开(公告)号：US5409890A

公开(公告)日：1995-04-25

申请号：US122178

申请日：1993-09-17

申请人： Susumu Yamamoto ,  Nozomu Kawabe ,  Tomoyuki Awazu ,  Teruyuki Murai

发明人： Susumu Yamamoto ,  Nozomu Kawabe ,  Tomoyuki Awazu ,  Teruyuki Murai

IPC分类号： B21C1/00 ,  B22F3/02 ,  B22F5/12 ,  B28B1/00 ,  C04B35/45 ,  C04B35/64 ,  H01B12/04 ,  H01B13/00 ,  H01L39/24

CPC分类号： H01L39/248 ,  C04B35/4504 ,  C04B35/4512 ,  C04B35/4521 ,  C04B35/64 ,  H01L39/2419 ,  Y10T29/49014

摘要： Improvement in a process for producing a sintered elongated article by the steps comprising filling a metal pipe with a material powder, carrying out plastic deformation of the metal pipe and then subjecting the material powder in deformed metal pipe to sintering. In the invention, the step of the plastic deformation includes at least one deformation satge carried out under a hot condition.

摘要翻译： 通过以下步骤制造烧结细长制品的方法的改进包括用金属材料粉末填充金属管，进行金属管的塑性变形，然后使变形的金属管中的材料粉末烧结。 在本发明中，塑性变形的步骤包括在热条件下进行的至少一个变形饱和。

公开(公告)号：US20080211526A1

公开(公告)日：2008-09-04

申请号：US11492225

申请日：2006-07-25

申请人： Kenji Shinma ,  Katsuhiro Itakura ,  Tomoyuki Awazu ,  Hirohiko Nakata

发明人： Kenji Shinma ,  Katsuhiro Itakura ,  Tomoyuki Awazu ,  Hirohiko Nakata

IPC分类号： G01R31/02 ,  B23B5/22

CPC分类号： G01R31/2865 ,  G01R31/2875 ,  H01L21/67109 ,  H01L21/68757 ,  Y10T279/17

摘要： By wafer holder including a chuck top for mounting a wafer and a supporter supporting the chuck top and having flatness of at most 0.1 mm, a heater unit for a wafer prober and the wafer prober using the wafer holder, a wafer holder and a wafer prober apparatus hardly deformable even under high load and capable of effectively preventing contact failure, and capable of preventing temperature increase in a driving system when a semiconductor wafer having semiconductor chips with minute circuitry that requires high accuracy is heated can be provided. In the wafer holder of the present invention, the flatness of the supporter is preferably at most 0.05 mm, and more preferably at most 0.01 mm.

摘要翻译： 通过晶片保持器，其包括用于安装晶片的卡盘顶部和支撑卡盘顶部并具有至多0.1mm的平坦度的支撑件，用于晶片探测器的加热器单元和使用晶片保持器的晶片探测器，晶片保持器和晶片探测器 可以提供即使在高负载下即使在高负载下也能够变形的装置，并且能够有效地防止接触故障，并且可以提供具有加热需要高精度的具有微小电路的半导体芯片的半导体晶片的驱动系统中的温度升高的装置。 在本发明的晶片保持器中，支撑体的平坦度优选为0.05mm以下，更优选为0.01mm以下。

公开(公告)号：US20070215602A1

公开(公告)日：2007-09-20

申请号：US11684895

申请日：2007-03-12

申请人： Masuhiro Natsuhara ,  Tomoyuki Awazu ,  Hirohiko Nakata ,  Akira Mikumo

发明人： Masuhiro Natsuhara ,  Tomoyuki Awazu ,  Hirohiko Nakata ,  Akira Mikumo

IPC分类号： H05B3/10

CPC分类号： H05B3/143 ,  H01L21/67103 ,  H01L21/67109

摘要： A heating and cooling module wherein the calorific value can be increased in a heater for mounting and heating a semiconductor chip, and the heating and cooling module is not damaged when the semiconductor chip is rapidly heated and cooled. The heating and cooling module of the includes a ceramic heater for mounting and heating a treated object, a cooling mechanism for cooling the ceramic heater, and a holder between the ceramic heater and the cooling mechanism, wherein the ceramic heater is an aluminum nitride heater having one or more internally disposed heating element layers. An intermediate layer is preferably inserted between the ceramic heater and the holder. An intermediate layer is also preferably inserted between the holder and the cooling mechanism.

摘要翻译： 一种加热和冷却模块，其中在用于安装和加热半导体芯片的加热器中可以增加热值，并且当半导体芯片被快速加热和冷却时，加热和冷却模块不被损坏。 其加热和冷却模块包括用于安装和加热被处理物体的陶瓷加热器，用于冷却陶瓷加热器的冷却机构和陶瓷加热器与冷却机构之间的保持器，其中陶瓷加热器是具有 一个或多个内部设置的加热元件层。 中间层优选插入陶瓷加热器和保持器之间。 中间层也优选地插入保持器和冷却机构之间。

公开(公告)号：US20070082313A1

公开(公告)日：2007-04-12

申请号：US11498276

申请日：2006-08-03

申请人： Katsuhiro Itakura ,  Masuhiro Natsuhara ,  Hirohiko Nakata ,  Tomoyuki Awazu ,  Teruto Nishi

发明人： Katsuhiro Itakura ,  Masuhiro Natsuhara ,  Hirohiko Nakata ,  Tomoyuki Awazu ,  Teruto Nishi

IPC分类号： F24J3/00

CPC分类号： G01R31/2863 ,  G01R31/2875 ,  H01L21/68757

摘要： A wafer holder less susceptible to deformation even under high load and having high heat-insulating effect and hence capable of improving positional accuracy, improving thermal uniformity and rapid heating and cooling of chips, as well as a heater unit including the wafer holder and a wafer prober including the heater unit are provided. The wafer holder includes a chuck top having a chuck top conductive layer on its surface and a supporter supporting the chuck top, and has a support member in a space between the chuck top and the supporter. Preferably, the support member is arranged concentric with the supporter or approximately at the center of the supporter, and more preferably, support members arranged concentrically and arranged at the center are both provided.

摘要翻译： 晶片保持器即使在高负载下也不易变形，并且具有高绝热效果，因此能够提高位置精度，提高芯片的热均匀性和快速加热和冷却，以及包括晶片保持器和晶片的加热器单元 提供包括加热器单元的探测器。 晶片保持器包括在其表面上具有卡盘顶部导电层的卡盘顶部和支撑卡盘顶部的支撑件，并且在卡盘顶部和支撑件之间的空间中具有支撑构件。 优选地，支撑构件与支撑件同心地布置，或者大致位于支撑件的中心，并且更优选地，设置在同心且布置在中心的支撑构件。

公开(公告)号：US20070062929A1

公开(公告)日：2007-03-22

申请号：US11507655

申请日：2006-08-22

申请人： Akira Mikumo ,  Tomoyuki Awazu ,  Masuhiro Natsuhara ,  Hirohiko Nakata

发明人： Akira Mikumo ,  Tomoyuki Awazu ,  Masuhiro Natsuhara ,  Hirohiko Nakata

IPC分类号： H05B3/68

CPC分类号： H05B3/265 ,  H01L21/67109

摘要： A heater unit that much improves accuracy in thermal uniformity of an object of heating during cooling, particularly rapid cooling, is provided. The heater unit in accordance with the present invention includes a heater substrate for mounting an object of heating and performing heat treatment thereon, and a cooling module for cooling the heater substrate, and between said heater substrate and the cooling module, an intervening body is arranged. Utilizing deformability of the intervening body, ratio of a non-contact portion can be reduced than when the intervening body is not provided, and temperature uniformity of the heater substrate at the time of cooling can be improved.

摘要翻译： 提供了一种加热器单元，其大大提高了冷却期间加热对象的热均匀性的精度，特别是快速冷却。 根据本发明的加热器单元包括用于安装加热物体并在其上进行热处理的加热器基板，以及用于冷却加热器基板的冷却模块，并且在所述加热器基板和冷却模块之间布置有中间体 。 利用中间体的可变形性，可以比不设置中间体时的非接触部分的比例降低，并且可以提高冷却时的加热器基板的温度均匀性。