公开(公告)号：US20110254087A1

公开(公告)日：2011-10-20

申请号：US13167850

申请日：2011-06-24

申请人： Tomoyuki MIYAKE ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki MIYAKE ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L29/10

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US20070194407A1

公开(公告)日：2007-08-23

申请号：US11783779

申请日：2007-04-12

申请人： Fumitaka Nakayama ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Tetsuo Uchiyama

发明人： Fumitaka Nakayama ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Tetsuo Uchiyama

IPC分类号： H01L29/00

CPC分类号： H01L21/823814 ,  H01L21/26586 ,  H01L23/3677 ,  H01L23/5223 ,  H01L23/5227 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/0922 ,  H01L28/20 ,  H01L28/40 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4975 ,  H01L29/66659 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03F3/193 ,  H01L2924/00

摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。

公开(公告)号：US07145394B2

公开(公告)日：2006-12-05

申请号：US11098454

申请日：2005-04-05

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F3/16

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

公开(公告)号：US20050051814A1

公开(公告)日：2005-03-10

申请号：US10902130

申请日：2004-07-30

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L23/367 ,  H01L23/66 ,  H01L27/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过调节最靠近栅电极的n +型偏移漏极区域的杂质浓度相对较低并且调节n型偏移漏极区域的杂质浓度来实现的 从栅电极到相对较高。

公开(公告)号：US06617927B2

公开(公告)日：2003-09-09

申请号：US10122382

申请日：2002-04-16

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F316

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

公开(公告)号：US20100258876A1

公开(公告)日：2010-10-14

申请号：US12823453

申请日：2010-06-25

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L27/088

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US07791131B2

公开(公告)日：2010-09-07

申请号：US11645577

申请日：2006-12-27

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/62 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US20070102757A1

公开(公告)日：2007-05-10

申请号：US11645577

申请日：2006-12-27

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L29/76

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n + SUP型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US20050208905A1

公开(公告)日：2005-09-22

申请号：US11098454

申请日：2005-04-05

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F3/189 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01Q11/12 ,  H03F1/02 ,  H03F1/22 ,  H03F1/32 ,  H03F3/60 ,  H03F3/72 ,  H03G1/00 ,  H04B1/04 ,  H04K1/02

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

公开(公告)号：US20050098851A1

公开(公告)日：2005-05-12

申请号：US10670258

申请日：2003-09-26

申请人： Fumitaka Nakayama ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Tetsuo Uchiyama

发明人： Fumitaka Nakayama ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Tetsuo Uchiyama

IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L29/00

CPC分类号： H01L21/823814 ,  H01L21/26586 ,  H01L23/3677 ,  H01L23/5223 ,  H01L23/5227 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/0922 ,  H01L28/20 ,  H01L28/40 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4975 ,  H01L29/66659 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03F3/193 ,  H01L2924/00

摘要： Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and above and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.

摘要翻译： 通过在基板上形成来自一个相同的多晶硅膜的电容器元件的电阻元件和下电极来提供在一个芯片中形成高频器件的多个元件; 形成功率MISFET的栅电极，电容器元件的上电极，n沟道型MISFET的栅电极和p沟道型MISFET的栅极与不同于另一多晶硅膜的上述相同的多晶硅膜以上 和WSi电影; 形成电容器元件，其具有形成在沉积在所述基板上的氧化硅膜上的布线作为下电极，以及在所述区域MIN中形成在所述氧化硅膜上的布线作为所述上电极; 使用与沉积在氧化硅膜上的铝合金膜相同的铝合金膜在区域IND中形成螺旋线圈; 以及在区域PAD中形成接合焊盘。