公开(公告)号：US20110254176A1

公开(公告)日：2011-10-20

申请号：US13088737

申请日：2011-04-18

Applicant: Naohide TAKAMOTO ,  Goji SHIGA ,  Fumiteru ASAI ,  Akiyoshi YAMAMOTO ,  Tomokazu TAKAHASHI

Inventor： Naohide TAKAMOTO ,  Goji SHIGA ,  Fumiteru ASAI ,  Akiyoshi YAMAMOTO ,  Tomokazu TAKAHASHI

IPC: H01L23/48 ,  B32B7/12 ,  H01L21/50

CPC classification number: H01L21/6836 ,  C09J7/20 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/561 ,  H01L23/3164 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2224/16225 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2924/14 ,  Y10T428/2809 ,  H01L2924/00

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer on the base material; and a film for flip chip type semiconductor back surface, which is provided on the pressure-sensitive adhesive layer, in which at least a part of the pressure-sensitive adhesive layer has been cured beforehand by irradiation with a radiation ray.

Abstract translation: 本发明提供了一种用于半导体背面的切割带一体化膜，包括：在基材上包括基材和压敏粘合剂层的切割带; 以及设置在压敏粘合剂层上的倒装芯片型半导体背表面的膜，其中至少一部分粘合剂层已经通过辐射线照射被预先固化。

公开(公告)号：US20110076490A1

公开(公告)日：2011-03-31

申请号：US12895435

申请日：2010-09-30

Applicant: Yuki HIGASHIBEPPU ,  Tomokazu TAKAHASHI ,  Fumiteru ASAI

Inventor： Yuki HIGASHIBEPPU ,  Tomokazu TAKAHASHI ,  Fumiteru ASAI

IPC: C09J7/02 ,  B32B38/04 ,  B32B37/02

CPC classification number: H01L21/6836 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  C09J7/385 ,  C09J2203/326 ,  C09J2205/31 ,  H01L2221/68336 ,  Y10T156/10 ,  Y10T156/1052 ,  Y10T428/28 ,  Y10T428/2809

Abstract: A pressure-sensitive adhesive sheet for retaining elements according to an embodiment of the present invention includes abase material layer and a pressure-sensitive adhesive layer provided on the base material layer and capable of being cured by an external stimulus. A crack-generating elongation represented by the following equation in a case where the pressure-sensitive adhesive sheet is elongated in a state where the pressure-sensitive adhesive layer is cured is larger than 115%. Crack-generating elongation (%)=[(a length of the pressure-sensitive adhesive sheet when a crack is generated in a surface of the pressure-sensitive adhesive layer)−(an original length of the pressure-sensitive adhesive sheet)]/(the original length of the pressure-sensitive adhesive sheet)×100.

Abstract translation: 根据本发明实施例的用于保持元件的压敏粘合片包括设置在基材层上并能够通过外部刺激固化的耐磨材料层和压敏粘合剂层。 在压敏粘合剂层固化的状态下，压敏粘合片细长的情况下，由下式表示的裂纹产生伸长率大于115％。 产生裂纹的伸长率（％）= [（粘合剂层的表面产生裂纹时的粘合片的长度） - （粘合片的原始长度）] / （粘合片的原始长度）×100。

公开(公告)号：US20110030881A1

公开(公告)日：2011-02-10

申请号：US12851890

申请日：2010-08-06

Applicant: Takatoshi SASAKI ,  Fumiteru ASAI ,  Kouji MIZUNO

Inventor： Takatoshi SASAKI ,  Fumiteru ASAI ,  Kouji MIZUNO

IPC: B32B38/10 ,  C09J7/02 ,  B32B7/02 ,  B32B27/30

CPC classification number: H01L21/6836 ,  C09J7/385 ,  C09J2201/622 ,  C09J2203/326 ,  H01L2221/6834 ,  Y10T428/264

Abstract: An adhesive sheet for supporting and protecting a semiconductor wafer has an adhesive layer formed on one side of a base film, the adhesive layer having a thickness of 4 to 42 μm and an elastic modulus at 25° C. of 0.5 to 9 MPa. The adhesive sheet of the present invention is useful in the broader application such as an adhesive sheet for affixing a wafer and for protecting a wafer, and the like in various steps of working the semiconductor wafers, that needs re-peelable.

Abstract translation: 用于支撑和保护半导体晶片的粘合片具有形成在基膜的一侧上的粘合剂层，粘合剂层的厚度为4至42μm，并且在25℃下的弹性模量为0.5至9MPa。 本发明的粘合片可用于更广泛的应用，例如用于固定晶片和用于保护晶片的粘合片等，在需要重新剥离的各种半导体晶片的加工步骤中。

公开(公告)号：US20090314417A1

公开(公告)日：2009-12-24

申请号：US12487718

申请日：2009-06-19

Applicant: Takatoshi SASAKI ,  Toshio SHINTANI ,  Fumiteru ASAI ,  Akiyoshi YAMAMOTO

Inventor： Takatoshi SASAKI ,  Toshio SHINTANI ,  Fumiteru ASAI ,  Akiyoshi YAMAMOTO

IPC: B32B38/10 ,  C08K5/521

CPC classification number: H01L21/6835 ,  C08K5/521 ,  C09J7/385 ,  C09J133/08 ,  C09J2203/326 ,  C09J2205/102 ,  H01L21/304 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: The present invention provides a method of grinding a back side of a semiconductor wafer, which includes applying an adhesive sheet including a substrate and an adhesive layer formed on one side of the substrate to a front side of a semiconductor wafer to provisionally fix the semiconductor wafer to the adhesive sheet, followed by grinding the back side of the semiconductor wafer, in which the adhesive layer contains 100 parts by weight of a base polymer for radiation-curable adhesives, 0.02 to 10 parts by weight of a phosphoric ester compound having an alkyl group having 10 or more carbon atoms, and more than 10 parts by weight but 200 parts by weight or less of at least one polyfunctional acrylate oligomer and/or monomer having one or more carbon-carbon double bonds, the polyfunctional acrylate oligomer and/or monomer having a weight-average molecular weight per carbon-carbon double bond of 250 to 6,500.

Abstract translation: 本发明提供一种研磨半导体晶片的背面的方法，该方法包括在半导体晶片的正面侧涂布包括基板和形成在基板一侧上的粘合层的粘合片，以临时固定半导体晶片 然后研磨半导体晶片的背面，其中粘合剂层含有100重量份的用于放射线固化粘合剂的基础聚合物，0.02至10重量份具有烷基的磷酸酯化合物 具有10个或更多个碳原子的多官能丙烯酸酯低聚物和/或具有一个或多个碳 - 碳双键的多官能丙烯酸酯低聚物和/或单体的多于10重量份但是200重量份或更少的多官能丙烯酸酯低聚物和/或 每个碳 - 碳双键的重均分子量为250〜6,500的单体。