公开(公告)号：US20210074751A1

公开(公告)日：2021-03-11

申请号：US16563052

申请日：2019-09-06

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Alireza Bonakdar ,  Zhiqiang Lin

IPC: H01L27/146

Abstract: An image sensor includes a substrate material, an array of the color filters, an array of waveguides and spacers. The substrate material includes a plurality of photodiodes disposed therein. The array of color filters are disposed over the substrate material. The array of waveguides are disposed over the substrate material. The buffer layer is disposed between the substrate material and the arrays of color filters and waveguides. The spacers are disposed between the color filters in the array of color filters. The spacers are disposed between the waveguides in the array of waveguides. Incident light is adapted to be confined between the spacers. The incident light is adapted to be directed through one of the waveguides and through one of the color filters prior to being directed through the buffer layer into one of the photodiodes in the substrate material.

公开(公告)号：US20190333953A1

公开(公告)日：2019-10-31

申请号：US15962943

申请日：2018-04-25

Applicant: OmniVision Technologies, Inc.

Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Zhiqiang Lin ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

Abstract: An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens.

公开(公告)号：US20190019832A1

公开(公告)日：2019-01-17

申请号：US15666086

申请日：2017-08-01

Applicant: OmniVision Technologies, Inc.

Inventor： Cheng Zhao ,  Cunyu Yang ,  Chen-Wei Lu ,  Zhiqiang Lin

IPC: H01L27/146 ,  H04N5/33 ,  H01L27/148

Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure. The NIR QE and MTF enhancement structure comprises: a NIR QE enhancement sub-structure comprising at least one NIR QE enhancement elements within a photosensitive region of the photodiode, wherein the NIR QE enhancement sub-structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve optical sensitivity, including NIR light sensitivity, of the image sensor; and a MTF enhancement sub-structure disposed on the non-illuminated surface of the semiconductor material, facing toward the NIR QE enhancement sub-structure, wherein the MTF enhancement structure has a geometry corresponding to the NIR QE enhancement sub-structure, to ensure the incident light is still within the photodiode after redistribution.

公开(公告)号：US09312299B2

公开(公告)日：2016-04-12

申请号：US14250192

申请日：2014-04-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

IPC: H01L27/146 ,  H01L31/167

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

公开(公告)号：US09160949B2

公开(公告)日：2015-10-13

申请号：US13854446

申请日：2013-04-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Zhiqiang Lin

IPC: H04N5/361 ,  H01L31/02 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/02 ,  H01L31/02027 ,  H01L31/107

Abstract: A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material.

Abstract translation: 光子检测装置包括具有布置在半导体材料的第一区域中的平面结的光电二极管。 深沟槽隔离（DTI）结构设置在半导体材料中。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括在DTI结构的内表面内衬的电介质层和设置在DTI结构内的电介质层上的掺杂半导体材料。 设置在DTI结构内的掺杂半导体材料耦合到偏置电压，以将半导体材料的第一区域中的光电二极管与半导体材料的第二区域隔离。

公开(公告)号：US20140291481A1

公开(公告)日：2014-10-02

申请号：US13854446

申请日：2013-04-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Zhiqiang Lin

IPC: H04N5/361 ,  H01L31/02

CPC classification number: H04N5/361 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/02 ,  H01L31/02027 ,  H01L31/107

Abstract: A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material.

Abstract translation: 光子检测装置包括具有布置在半导体材料的第一区域中的平面结的光电二极管。 深沟槽隔离（DTI）结构设置在半导体材料中。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括在DTI结构的内表面内衬的电介质层和设置在DTI结构内的电介质层上的掺杂半导体材料。 设置在DTI结构内的掺杂半导体材料耦合到偏置电压，以将半导体材料的第一区域中的光电二极管与半导体材料的第二区域隔离。