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    Image sensor with split pixel structure and method of manufacturing thereof
    1.
    发明授权
    Image sensor with split pixel structure and method of manufacturing thereof 有权

    公开(公告)号：US11217613B2

    公开(公告)日：2022-01-04

    申请号：US16687660

    申请日：2019-11-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Bill Phan ,  Yuanliang Liu ,  Duli Mao ,  Seong Yeol Mun ,  Alireza Bonakdar

    IPC: H01L27/146 ,  H04N5/378

    Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

    Image sensors with embedded wells for accommodating light emitters
    2.
    发明授权
    Image sensors with embedded wells for accommodating light emitters 有权

    公开(公告)号：US11557625B2

    公开(公告)日：2023-01-17

    申请号：US16853684

    申请日：2020-04-20

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chia-Ying Liu ,  Wu-Zang Yang ,  Chia-Jung Liu ,  Ming Zhang ,  Yin Qian ,  Alireza Bonakdar

    IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/14 ,  H01L31/0352

    Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.

    METHOD AND STRUCTURE TO IMPROVE IMAGE SENSOR CROSSTALK
    3.
    发明申请
    METHOD AND STRUCTURE TO IMPROVE IMAGE SENSOR CROSSTALK 有权

    公开(公告)号：US20210202546A1

    公开(公告)日：2021-07-01

    申请号：US16729176

    申请日：2019-12-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao ,  Alireza Bonakdar

    IPC: H01L27/146

    Abstract: Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein. A plurality of pixel isolators is formed in the substrate material, each pixel isolator being disposed between one of the SPDs and one of the LPDs. A passivation layer is disposed on the substrate material and a buffer layer is disposed on the passivation layer. A plurality of first metal elements is disposed in the buffer layer, each first metal element being disposed over one of the pixel isolators, and a plurality of second metal elements is disposed over the plurality of first metal elements.

    LIGHT SENSING SYSTEM AND LIGHT SENSOR WITH POLARIZER
    4.
    发明申请
    LIGHT SENSING SYSTEM AND LIGHT SENSOR WITH POLARIZER 有权

    公开(公告)号：US20210175378A1

    公开(公告)日：2021-06-10

    申请号：US16703542

    申请日：2019-12-04

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Alireza Bonakdar ,  Shinn-Jhy Lian

    IPC: H01L31/0232 ,  H01L31/0216 ,  H01L31/02 ,  G02B5/30 ,  H01L27/146

    Abstract: A light sensor includes a photodiode, interlayer dielectric layer and plurality of metal layers. A polarizer is disposed in the plurality of metal layers. The photodiode is coupled to generate charge in response to incident light directed through a first side of the semiconductor layer. The polarizer includes a first metal grid formed with a first metal layer and a second metal grid formed with a third metal layer. The second metal grid is stacked with the first metal grid such that the first and second metal grids are disposed above and aligned with the photodiode. The photodiode is optically coupled to receive incident light through the first and second metal grids of the polarizer and through the first side of the semiconductor layer.

    IMAGE SENSOR WITH REDUCED PETAL FLARE
    5.
    发明申请
    IMAGE SENSOR WITH REDUCED PETAL FLARE 有权

    公开(公告)号：US20210074751A1

    公开(公告)日：2021-03-11

    申请号：US16563052

    申请日：2019-09-06

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Alireza Bonakdar ,  Zhiqiang Lin

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate material, an array of the color filters, an array of waveguides and spacers. The substrate material includes a plurality of photodiodes disposed therein. The array of color filters are disposed over the substrate material. The array of waveguides are disposed over the substrate material. The buffer layer is disposed between the substrate material and the arrays of color filters and waveguides. The spacers are disposed between the color filters in the array of color filters. The spacers are disposed between the waveguides in the array of waveguides. Incident light is adapted to be confined between the spacers. The incident light is adapted to be directed through one of the waveguides and through one of the color filters prior to being directed through the buffer layer into one of the photodiodes in the substrate material.

    Pillar structures for suppressing optical cross-talk
    6.
    发明授权
    Pillar structures for suppressing optical cross-talk 有权

    公开(公告)号：US10811453B1

    公开(公告)日：2020-10-20

    申请号：US16671608

    申请日：2019-11-01

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Seong Yeol Mun ,  Bill Phan ,  Alireza Bonakdar

    IPC: H01L27/146

    Abstract: An image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of deep trench isolation (DTI) structures are formed laterally with respect to the photodiodes on the backside of the semiconductor substrate. The plurality of DTI structures are arranged between adjacent photodiodes. A plurality of pillar structures extend from a metal grid proximate to the backside and is formed proximate to the backside and aligned with the DTI structures.

    Flare-blocking image sensor
    10.
    发明授权
    Flare-blocking image sensor 有权

    公开(公告)号：US11469264B2

    公开(公告)日：2022-10-11

    申请号：US16777027

    申请日：2020-01-30

    Applicant: OmniVision Technologies, Inc.

    Inventor： Alireza Bonakdar ,  Shinn-Jhy Lian ,  Badrinath Padmanabhan

    IPC: H01L27/146

    Abstract: A flare-blocking image sensor includes large pixels and small pixels, a microlens, and an opaque element. The large pixels and small pixels form a first and second pixel array respectively, each having a pixel pitch Px and Py. The second pixel array is offset from the first pixel array by ½Px and ½Py. A first large pixel of the large pixels is between and collinear with a first and a second small pixel separated by √{square root over (Px2+Py2 )} in a first direction and each having a width W less than both pixel pitch Px and Py. The microlens is aligned with the first large pixel. The opaque element is between the first large pixel and the microlens and extends, in the first direction, less than ½(√{square root over (Px2+Py2)}−W) from the first small pixel toward the second small pixel. The opaque element has a width perpendicular to the first direction not exceeding width W.

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