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公开(公告)号：US20210105424A1
公开(公告)日：2021-04-08
申请号：US17124278
申请日：2020-12-16
Inventor： Kazuko Nishimura , Tokuhiko Tamaki , Masashi Murakami
IPC: H04N5/355 , H04N5/3745 , H01L27/146 , H04N5/359 , H04N5/363 , H04N5/369 , H04N5/378
Abstract: An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.
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公开(公告)号：US10818707B2
公开(公告)日：2020-10-27
申请号：US16130664
申请日：2018-09-13
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/3745 , H04N5/369
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US10326959B2
公开(公告)日：2019-06-18
申请号：US16232633
申请日：2018-12-26
Inventor： Tokuhiko Tamaki
Abstract: An imaging device includes a first image pickup cell having a first photoelectric converter converting incident light into first charges, the first photoelectric converter including a first pixel electrode, a first electrode, and a first photoelectric conversion region between the first pixel electrode and the first electrode, and a first charge storage node coupled to the first pixel electrode for accumulating the first charges; a second image pickup cell having a second photoelectric converter converting incident light into second charges, the second photoelectric converter including a second pixel electrode, a second electrode, and a second photoelectric conversion region between the second pixel electrode and the second electrode, and a second charge storage node coupled to the second pixel electrode for accumulating the second charges. The first pixel electrode has a first area, and the second pixel electrode has a second area less than the first area.
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公开(公告)号：US10317287B2
公开(公告)日：2019-06-11
申请号：US15662654
申请日：2017-07-28
Inventor： Naoki Shimasaki , Tokuhiko Tamaki , Sanshiro Shishido
IPC: G01J5/08 , G01J1/04 , G01J1/42 , G01J3/36 , G01J5/20 , H01L27/146 , H04N3/14 , H04N5/232 , H04N5/33 , H04N5/3745 , H04N5/357 , H04N5/378
Abstract: An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer; a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.
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公开(公告)号：US09967501B2
公开(公告)日：2018-05-08
申请号：US14857699
申请日：2015-09-17
Inventor： Tokuhiko Tamaki
CPC classification number: H04N5/378 , H04N5/2253 , H04N5/2254 , H04N5/35563 , H04N5/3696
Abstract: An imaging device according to one aspect of the present disclosure includes: a first image pickup cell comprising a first photoelectric converter that converts incident light into a first charge, a first charge detection circuit that is electrically connected to the first photoelectric converter and detects the first charge, and a first capacitive element one end of which is electrically connected to the first photoelectric converter, the first capacitive element storing at least a part of the first charge; and a second image pickup cell comprising a second photoelectric converter that converts incident light into a second charge, and a second charge detection circuit that is electrically connected to the second photoelectric converter and detects the second charge.
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Patent Agency Ranking
公开(公告)号：US09478760B2
公开(公告)日：2016-10-25
申请号：US14668606
申请日：2015-03-25
Inventor： Tokuhiko Tamaki , Masayuki Takase , Yasuhiko Adachi
CPC classification number: H01L51/441 , H01L27/307 , H01L51/4273 , Y02E10/549
Abstract: A solid-state imaging device according to an aspect of the present disclosure includes pixel including: a first and second electrode located in a same layer, the second electrode being located between the first electrode and the other first electrodes included in adjacent pixels; an organic photoelectric conversion film including a first surface and a second surface, the first surface being in contact with the first electrode and the second electrode; and a counter electrode located on the second surface. The organic photoelectric conversion film extends over the pixels. The first electrode is an electrode through which electrons or holes generated in the organic photoelectric conversion film are extracted. An area ratio of the first electrode to the each pixel is 25% or less. And a total area ratio of a sum of the first electrode and the second electrode to the each pixel is 40% or greater.
Abstract translation: 根据本公开的一个方面的固态成像装置包括像素，包括：位于相同层中的第一和第二电极，第二电极位于第一电极和包括在相邻像素中的其它第一电极之间; 包括第一表面和第二表面的有机光电转换膜，所述第一表面与所述第一电极和所述第二电极接触; 和位于第二表面上的对电极。 有机光电转换膜在像素上延伸。 第一电极是提取在有机光电转换膜中产生的电子或空穴的电极。 第一电极与每个像素的面积比为25％以下。 并且，第一电极和第二电极的总和与各像素的总面积比为40％以上。
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公开(公告)号：US09402040B2
公开(公告)日：2016-07-26
申请号：US14666200
申请日：2015-03-23
Inventor： Masayuki Takase , Yoshihiro Sato , Junji Hirase , Tokuhiko Tamaki
IPC: H04N5/369 , G02B13/00 , H04N5/232 , H01L27/146
CPC classification number: H04N5/369 , G02B13/0015 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14665 , H04N5/23212 , H04N5/3696
Abstract: A solid-state imaging device has a plurality of imaging-purpose pixels and a plurality of focus detection-purpose pixels. Each of the imaging-purpose pixels are provided with a first lower electrode, a photoelectric conversion film formed on the first lower electrode, and an upper electrode formed on the photoelectric conversion film. Each of the focus detection-purpose pixels is provided with a second lower electrode, the photoelectric conversion film formed on the second lower electrode, and the upper electrode formed on the photoelectric conversion film. The area of the second lower electrode is smaller than the area of the first lower electrodes. The second lower electrode is provided on a position deviating from a pixel center of a corresponding focus detection-pixel, and two second lower electrodes corresponding to two focus detection purpose pixels included in the plurality of focus detection purpose pixels is arranged in mutually opposite directions.
Abstract translation: 固态成像装置具有多个成像目的像素和多个焦点检测目的像素。 每个成像目的像素设置有形成在第一下电极上的第一下电极，光电转换膜和形成在光电转换膜上的上电极。 每个焦点检测目的像素设置有第二下部电极，形成在第二下部电极上的光电转换膜和形成在光电转换膜上的上部电极。 第二下部电极的面积小于第一下部电极的面积。 第二下电极设置在偏离对应的焦点检测像素的像素中心的位置，并且与多个焦点检测目的像素中包括的两个焦点检测目的像素相对应的两个第二下部电极被布置在相互相反的方向上。
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公开(公告)号：US11895419B2
公开(公告)日：2024-02-06
申请号：US17496589
申请日：2021-10-07
Inventor： Tokuhiko Tamaki
IPC: H04N3/14 , H04N5/335 , H04N25/75 , H01L27/146 , H04N23/54 , H04N23/55 , H04N25/585 , H04N25/702
CPC classification number: H04N25/75 , H01L27/14627 , H04N23/54 , H04N23/55 , H04N25/585 , H04N25/702
Abstract: An imaging device includes: a first pixel including a first photoelectric converter that converts incident light into first signal charges, and a first charge storage node that accumulates the first signal charges; and a second pixel including a second photoelectric converter that converts incident light into second signal charges, and a second charge storage node that accumulates the second signal charges. An area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view. Capacitance of the first charge storage node is greater than capacitance of the second charge storage node.
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公开(公告)号：US11532652B2
公开(公告)日：2022-12-20
申请号：US16897509
申请日：2020-06-10
Inventor： Masayuki Takase , Takayoshi Yamada , Tokuhiko Tamaki
IPC: H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
Abstract: An imaging device includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a counter electrode on the first surface; a first electrode on the second surface; a second electrode on the second surface, the second electrode being spaced from the first electrode; and an auxiliary electrode on the second surface between the first electrode and the second electrode. The auxiliary electrode is spaced from the first electrode and the second electrode, where a shortest distance between the first electrode and the auxiliary electrode is different from a shortest distance between the second electrode and the auxiliary electrode.
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公开(公告)号：US10904464B2
公开(公告)日：2021-01-26
申请号：US16447148
申请日：2019-06-20
Inventor： Kazuko Nishimura , Tokuhiko Tamaki , Masashi Murakami
IPC: H04N5/369 , H04N5/363 , H04N5/378 , H01L27/146 , H04N5/355 , H04N5/3745 , H04N5/359
Abstract: An imaging device comprising: a first pixel cell including a first photoelectric converter generating a first signal, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode, and a first circuit coupled to the first electrode and detecting the first signal; and a second pixel cell including a second photoelectric converter generating a second signal, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and a second circuit coupled to the second electrode and detecting the second signal. A sensitivity of the first pixel cell is higher than that of the second pixel cell. A circuit configuration of the first circuit is different from that of the second circuit. The first circuit includes a feedback circuit configured to negatively feed back a voltage of the first electrode to the first electrode.
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