公开(公告)号：US11025832B2

公开(公告)日：2021-06-01

申请号：US16782411

申请日：2020-02-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiaki Satou ,  Yasuo Miyake ,  Yasunori Inoue ,  Tokuhiko Tamaki

IPC: H04N5/235 ,  H04N5/355 ,  H04N5/353 ,  H04N5/374 ,  G03B7/08 ,  H01L27/146 ,  H04N9/04 ,  H04N5/369 ,  H04N5/232 ,  H04N5/262

Abstract: An imaging device includes a pixel including a photoelectric converter, where the pixel captures first data in a first exposure period and captures second data in a second exposure period different from the first exposure period, the first exposure period and the second exposure period being included in a frame period. A sensitivity of the photoelectric converter in the first exposure period is different from a sensitivity of the photoelectric converter in the second exposure period, and the imaging device generates multiple-exposure image data including at least the first data and the second data.

公开(公告)号：US10367025B2

公开(公告)日：2019-07-30

申请号：US15850645

申请日：2017-12-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro Sato ,  Ryohei Miyagawa ,  Tokuhiko Tamaki ,  Junji Hirase ,  Yoshiyuki Ohmori ,  Yoshiyuki Matsunaga

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/378 ,  H01L21/266 ,  H01L21/8234

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

公开(公告)号：US10276818B2

公开(公告)日：2019-04-30

申请号：US15665992

申请日：2017-08-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko Tamaki

IPC: H01L27/146 ,  H01L51/42 ,  H01L31/00 ,  H01L31/10 ,  H01L27/30 ,  H01L51/00 ,  H01L51/44 ,  H04N5/33 ,  H04N5/361 ,  H04N5/374 ,  H04N9/04 ,  H04N5/359 ,  H04N5/369 ,  H04N5/378

Abstract: An optical sensor includes: a semiconductor layer including first and second regions; a gate electrode; a gate insulating layer including a photoelectric conversion layer; a voltage supply circuit; and a signal detection circuit connected to the first region. The photoelectric conversion layer has a photocurrent characteristic including first and second voltage ranges where an absolute value of a current density increases as an absolute value of a bias voltage increases, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first and second voltage ranges, The voltage supply circuit applies a predetermined voltage between the gate electrode and the second region such that the bias voltage falls within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change of a capacitance of the photoelectric conversion layer.

公开(公告)号：US09986182B2

公开(公告)日：2018-05-29

申请号：US15719456

申请日：2017-09-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yasuo Miyake ,  Masashi Murakami ,  Tokuhiko Tamaki ,  Yoshiaki Satou

IPC: H04N5/335 ,  H04N5/353 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N5/355

CPC classification number: H04N5/353 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14669 ,  H04N5/3532 ,  H04N5/35554 ,  H04N5/3698 ,  H04N5/378 ,  Y02E10/549

Abstract: An imaging device includes: unit pixel cells each including first and second electrodes, a photoelectric conversion layer therebetween, a charge accumulation region, and a signal detection circuit; and a voltage supply circuit, the voltage supply circuit supplying a first voltage to the second electrode in an exposure period. The start and end of the exposure period is common to the unit pixel cells. The photoelectric conversion layer has a photocurrent characteristic including first to third voltage ranges. In the third voltage range between the first and second voltage ranges, an absolute value of a rate of change of a current density relative to a bias voltage is less than in the first and second voltage ranges. The voltage supply circuit supplies a second voltage to the second electrode in a non-exposure period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

公开(公告)号：US09812491B2

公开(公告)日：2017-11-07

申请号：US15441308

申请日：2017-02-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko Tamaki ,  Takeyoshi Tokuhara

IPC: H01L31/113 ,  H01L27/146 ,  H04N5/355 ,  H04N5/369

CPC classification number: H01L27/14665 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/307 ,  H04N5/355 ,  H04N5/35563 ,  H04N5/3698

Abstract: An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1

公开(公告)号：US12003872B2

公开(公告)日：2024-06-04

申请号：US18190002

申请日：2023-03-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yasuo Miyake ,  Masashi Murakami ,  Tokuhiko Tamaki ,  Yoshiaki Satou

IPC: H04N5/335 ,  H01L27/146 ,  H04N25/53 ,  H10K39/32

CPC classification number: H04N25/53 ,  H01L27/14609 ,  H01L27/14612 ,  H10K39/32

Abstract: An imaging device including pixels each including a photoelectric converter that converts light into a signal charge; and controller, where the controller causes the pixels to perform global shutter operation in a first frame period and causes the pixels to perform rolling shatter operation in a second frame period different from the first frame period.

公开(公告)号：US11722784B2

公开(公告)日：2023-08-08

申请号：US17834558

申请日：2022-06-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiaki Satou ,  Yasuo Miyake ,  Yasunori Inoue ,  Tokuhiko Tamaki

IPC: H04N23/743 ,  H04N25/53 ,  H04N25/534 ,  H04N25/57 ,  H04N25/587 ,  H04N25/59 ,  H04N25/70 ,  H04N25/76 ,  H01L27/146 ,  H04N5/262 ,  H04N23/62 ,  H04N23/10 ,  H04N23/73 ,  G03B7/08 ,  H04N23/63

CPC classification number: H04N23/743 ,  G03B7/08 ,  H04N23/10 ,  H04N23/73 ,  H04N25/53 ,  H04N25/534 ,  H04N25/57 ,  H04N25/587 ,  H04N25/59 ,  H04N25/70 ,  H04N25/76 ,  H01L27/14632 ,  H04N5/2621 ,  H04N23/631

Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

公开(公告)号：US11605656B2

公开(公告)日：2023-03-14

申请号：US17025620

申请日：2020-09-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko Tamaki ,  Hirohisa Ohtsuki ,  Ryohei Miyagawa ,  Motonori Ishii

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/369

Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

公开(公告)号：US11388349B2

公开(公告)日：2022-07-12

申请号：US17243101

申请日：2021-04-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiaki Satou ,  Yasuo Miyake ,  Yasunori Inoue ,  Tokuhiko Tamaki

IPC: H04N5/325 ,  H04N5/353 ,  H04N5/355 ,  H04N5/374 ,  H04N5/232 ,  H04N5/235 ,  H04N5/369 ,  H04N9/04 ,  G03B7/08 ,  H01L27/146 ,  H04N5/262

Abstract: An imaging device including a pixel, and a controller that sets a sensitivity of the pixel according to an external signal, where the external signal includes sound, vibration or inclination.

公开(公告)号：US11228725B2

公开(公告)日：2022-01-18

申请号：US16849210

申请日：2020-04-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi Tokuhara ,  Tokuhiko Tamaki

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H04N5/369 ,  G01J1/04 ,  G01J1/42 ,  G01J5/08 ,  G01J5/24 ,  H01L51/00 ,  H04N5/33 ,  H04N5/378

Abstract: A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.