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公开(公告)号：US10291205B2
公开(公告)日：2019-05-14
申请号：US14757651
申请日：2015-12-23
申请人： Qorvo US, Inc.
摘要： RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.
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公开(公告)号：US10205436B2
公开(公告)日：2019-02-12
申请号：US15338544
申请日：2016-10-31
申请人： Qorvo US, Inc.
发明人： Baker Scott , Robert Aigner , Gernot Fattinger , George Maxim , Dirk Robert Walter Leipold , Nadim Khlat
摘要： Embodiments of an acoustic wave filter system that includes at least one acoustic wave filter and acoustic wave tuning control circuitry are disclosed. The acoustic wave filter includes at least one acoustic wave resonator and defines a passband. To provide tuning for calibration or for dynamic filter operation, the acoustic wave tuning control circuitry is configured to bias one or more of the acoustic wave resonators with bias voltages. Biasing an acoustic wave resonator affects the resonances of the resonator, thereby allowing for the passband of the acoustic wave resonator to be tuned. Accordingly, the acoustic wave tuning control circuitry is configured to adjust the bias voltages so that the acoustic wave filter shifts the passband. In this manner, the passband of the acoustic wave filter can be tuned with high degree of accuracy and without requiring physical alterations to the acoustic wave resonators.
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公开(公告)号：US10009052B2
公开(公告)日：2018-06-26
申请号：US15420369
申请日：2017-01-31
申请人： Qorvo US, Inc.
CPC分类号： H04B1/1018 , H04B1/0057 , H04B1/006
摘要： RF filtering circuitry includes a first transmit signal node, a second transmit signal node, a common node, first transmit signal filtering circuitry, second transmit signal filtering circuitry, and transmit signal cancellation circuitry. The first transmit signal filtering circuitry is coupled between the first transmit signal node and the common node and is configured to pass RF transmit signals within a first transmit signal frequency band while attenuating signals outside the first transmit signal frequency band. The second transmit signal filtering circuitry is coupled between the second transmit signal node and the common node and is configured to pass RF transmit signals within a second transmit signal frequency band while attenuating signals outside the second transmit signal frequency band. The transmit signal cancellation circuitry is coupled between the common node and the second transmit signal node and is configured to generate a transmit cancellation signal.
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公开(公告)号：US20170093369A1
公开(公告)日：2017-03-30
申请号：US15275957
申请日：2016-09-26
申请人： Qorvo US, Inc.
发明人： Nadim Khlat , Robert Aigner
CPC分类号： H03H9/542 , H03H7/09 , H03H9/0004 , H03H9/02086 , H03H9/02433 , H03H9/605 , H03H9/6406 , H03H9/6483
摘要： In one embodiment, filter circuitry includes a series acoustic resonator between first and second nodes. A main series resonance is provided between the first node and the second node at a main resonance frequency through the series acoustic resonator. A compensation circuit includes first and second inductors coupled in series between the first node and the second node, wherein the first inductor and the second inductor are negatively coupled with one another and a common node is provided between the first and second inductors. The compensation circuit also includes first and second shunt acoustic resonators, which are coupled in parallel with one another between the common node and a fixed voltage node. First and second series resonances at first and second resonance frequencies are provided between the first node and the second node through compensation circuit wherein the first and second resonance frequencies are different.
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公开(公告)号：US20240267022A1
公开(公告)日：2024-08-08
申请号：US18637566
申请日：2024-04-17
申请人： Qorvo US, Inc.
发明人： Alireza Tajic , Paul Stokes , Robert Aigner
CPC分类号： H03H9/132 , H03H9/02062 , H03H9/02086 , H03H9/173 , H03H9/175 , H03H9/54 , H10N30/87 , H10N30/883
摘要： Bulk acoustic wave (BAW) resonators and particularly top electrodes with step arrangements for BAW resonators are disclosed. Top electrodes on piezoelectric layers are disclosed that include a border (BO) region with a dual-step arrangement where an inner step and an outer step are formed with increasing heights toward peripheral edges of the top electrode. Dielectric spacer layers may be provided between the outer steps and the piezoelectric layer. Passivation layers are disclosed that extend over the top electrode either to peripheral edges of the piezoelectric layer or that are inset from peripheral edges of the piezoelectric layer. Piezoelectric layers may be arranged with reduced thickness portions in areas that are uncovered by top electrodes. BAW resonators as disclosed herein are provided with high quality factors and suppression of spurious modes while also providing weakened BO modes that are shifted farther away from passbands of such BAW resonators.
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公开(公告)号：US11923238B2
公开(公告)日：2024-03-05
申请号：US17121194
申请日：2020-12-14
申请人： Qorvo US, Inc.
发明人： Julio C. Costa , Robert Aigner
IPC分类号： H01L21/762 , H01L21/56 , H01L21/683 , H01L21/786 , H01L23/00 , H01L23/31
CPC分类号： H01L21/76264 , H01L21/561 , H01L21/6836 , H01L21/786 , H01L23/3135 , H01L24/05 , H01L24/13 , H01L2221/68381 , H01L2224/02331 , H01L2224/02381 , H01L2224/13024
摘要： The present disclosure relates to a radio frequency device and a process for making the same. According to the process, a precursor wafer, which includes device regions, individual interfacial layers formed of SiGe, and a silicon handle substrate, is first provided. Each individual interfacial layer is over an active layer of a corresponding device region, and the silicon handle substrate is over each individual interfacial layer. A first bonding layer is formed underneath the precursor wafer. The precursor wafer is then attached to a support carrier with a second bonding layer. The first bonding layer and the second bonding layer merge to form a bonding structure between the precursor wafer and the support carrier. Next, the silicon handle substrate is removed from the precursor wafer to provide an etched wafer, and a first mold compound is applied to the etched wafer to provide a mold device wafer.
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公开(公告)号：US11451206B2
公开(公告)日：2022-09-20
申请号：US16507678
申请日：2019-07-10
申请人： Qorvo US, Inc.
发明人： Shogo Inoue , Marc Solal , Robert Aigner
摘要： A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.
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38.发明申请公开(公告)号：US20220131521A1
公开(公告)日：2022-04-28
申请号：US17176476
申请日：2021-02-16
申请人： Qorvo US, Inc.
发明人： Yazid Yusuf , Mohammad J. Modarres-Zadeh , Andreas Tag , Paul Stokes , Robert Aigner , Gernot Fattinger
摘要： Disclosed is a Bulk Acoustic Wave (BAW) filter structure with a conductive bridge forming an electrical loop with an electrode for reduced electrical losses. In exemplary aspects disclosed herein, the BAW filter structure includes a transducer with electrodes, a piezoelectric layer between the electrodes, and at least one conductive bridge offset from at least a portion of one of the electrodes by an insulating volume. The conductive bridge forms a first electrical loop between a medial end and a distal end of the electrode. Such a configuration reduces electrical resistance, heat resistance, and/or ohmic losses for improved electrical loss of the BAW filter structure.
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公开(公告)号：US11152913B2
公开(公告)日：2021-10-19
申请号：US16290175
申请日：2019-03-01
申请人： Qorvo US, Inc.
摘要： An acoustic resonator includes a first piezoelectric layer, a second piezoelectric layer, a coupler layer, a first electrode, and a second electrode. The first piezoelectric layer has a first polarity. The second piezoelectric layer has a second polarity opposite the first polarity. The coupler layer is between the first piezoelectric layer and the second piezoelectric layer. The first electrode is on the first piezoelectric layer opposite the coupler layer. The second electrode is on the second piezoelectric layer opposite the coupler layer.
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公开(公告)号：US11117799B2
公开(公告)日：2021-09-14
申请号：US16720919
申请日：2019-12-19
申请人： Qorvo US, Inc.
发明人： Nadim Khlat , Robert Aigner
摘要： A wire-based microelectromechanical systems (MEMS) apparatus is provided. In examples discussed herein, the wire-based MEMS apparatus includes a MEMS control bus and at least one passive MEMS switch circuit. The passive MEMS switch circuit is configured to close a MEMS switch(es) by generating a constant voltage(s) that exceeds a defined threshold voltage (e.g., 30-50 V). In a non-limiting example, the passive MEMS switch circuit can generate the constant voltage(s) based on a radio frequency (RF) voltage(s), which may be harvested from an RF signal(s) received via the MEMS control bus. In this regard, it may be possible to eliminate active components and/or circuits from the passive MEMS switch circuit, thus helping to reduce leakage and power consumption. As a result, it may be possible to provide the passive MEMS switch circuit in a low power apparatus for supporting such applications as the Internet-of-Things (IoT).
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