BICYCLIC, SUBSTITUTED TRIAZOLES AS MODULATORS OF PPAR AND METHODS OF THEIR PREPARATION
    31.
    发明申请
    BICYCLIC, SUBSTITUTED TRIAZOLES AS MODULATORS OF PPAR AND METHODS OF THEIR PREPARATION 审中-公开
    作为PPAR的调节剂的双相,取代三唑类及其制备方法

    公开(公告)号:US20060014785A1

    公开(公告)日:2006-01-19

    申请号:US11137679

    申请日:2005-05-24

    Abstract: The present invention is directed to certain novel triazole compounds represented by Formula I and pharmaceutically acceptable salts, solvates, hydrates, and prodrugs thereof. The present invention is also directed to methods of making and using such compounds and pharmaceutical compositions containing such compounds to treat or control a number of diseases mediated by PPAR such as glucose metabolism, lipid metabolism and insulin secretion, specifically Type 2 diabetes, hyperinsulemia, hyperlipidemia, hyperuricemia, hypercholesteremia, atherosclerosis, one or more risk factors for cardiovascular disease, Syndrome X, hypertriglyceridemia, hyperglycemia, obesity, and eating disorders.

    Abstract translation: 本发明涉及由式I表示的某些新颖的三唑化合物及其药学上可接受的盐,溶剂合物,水合物和前药。 本发明还涉及制备和使用这些化合物和含有这些化合物的药物组合物的方法,以治疗或控制PPAR介导的许多疾病,例如葡萄糖代谢,脂质代谢和胰岛素分泌,特别是2型糖尿病,高胰岛素血症,高脂血症 高尿酸血症,高胆固醇血症,动脉粥样硬化,心血管疾病的一个或多个危险因素,X综合征,高甘油三酯血症,高血糖症,肥胖症和进食障碍。

    Transistor structure having silicide source/drain extensions
    32.
    发明授权
    Transistor structure having silicide source/drain extensions 有权
    具有硅化物源极/漏极延伸部的晶体管结构

    公开(公告)号:US06737710B2

    公开(公告)日:2004-05-18

    申请号:US09343293

    申请日:1999-06-30

    CPC classification number: H01L29/66507 H01L29/41775

    Abstract: A MOSFET includes a double silicided source/drain structure wherein the source/drain terminals include a silicided source/drain extension, a deep silicided source/drain region, and a doped semiconductor portion that surrounds a portion of the source/drain structure such that the suicides are isolated from the MOSFET body node. In a further aspect of the present invention, a barrier layer is formed around a gate electrode to prevent electrical shorts between a silicided source/drain extension and the gate electrode. A deep source/drain is then formed, self-aligned to sidewall spacers that are formed subsequent to the silicidation of the source/drain extension.

    Abstract translation: MOSFET包括双硅化物源极/漏极结构,其中源极/漏极端子包括硅化源极/漏极延伸部分,深硅化物源极/漏极区域以及围绕源极/漏极结构的一部分的掺杂半导体部分,使得 自杀从MOSFET体节点隔离。 在本发明的另一方面,在栅极周围形成阻挡层,以防止硅化物源极/漏极延伸部和栅电极之间的电短路。 然后形成深源/漏极,自对准到在源极/漏极延伸层的硅化之后形成的侧壁间隔物。

    Method of fabricating nanoscale structures
    33.
    发明授权
    Method of fabricating nanoscale structures 有权
    制造纳米级结构的方法

    公开(公告)号:US06300221B1

    公开(公告)日:2001-10-09

    申请号:US09409164

    申请日:1999-09-30

    Abstract: A method includes forming a spacer mask having a defined edge over a portion of a substrate, and alternatively conformally depositing over a portion of a substrate including the spacer mask a predetermined member of at least a first material and a second material. In one aspect, the first material and the second material have a different etch rate for a predetermined etchant. The method also includes forming a free-standing spacer comprising the first material and the second material having a width equivalent to the thickness of one of a layer of the first material and the second material.

    Abstract translation: 一种方法包括在衬底的一部分上形成具有限定边缘的间隔物掩模,以及在包括至少第一材料和第二材料的预定构件的包括衬垫掩模的衬底的一部分上进行保形地沉积。 在一个方面,第一材料和第二材料对于预定的蚀刻剂具有不同的蚀刻速率。 该方法还包括形成包括第一材料和第二材料的独立间隔件,其宽度等于第一材料和第二材料的层之一的厚度。

    Method of forming metal lines
    34.
    发明授权
    Method of forming metal lines 有权
    形成金属线的方法

    公开(公告)号:US06197676B1

    公开(公告)日:2001-03-06

    申请号:US09226670

    申请日:1999-01-06

    CPC classification number: H01L21/76838 H01L21/76802

    Abstract: The invention provides a method of forming a metal line. A step is formed on a substrate. According to one method of the invention a metal layer is formed on the substrate and on the step. The metal layer is then etched. A portion of the metal layer remains adjacent the step and the substrate is exposed adjacent the portion of the metal layer.

    Abstract translation: 本发明提供一种形成金属线的方法。 在基板上形成台阶。 根据本发明的一种方法,在基板上和台阶上形成金属层。 然后蚀刻金属层。 金属层的一部分保持与台阶相邻,并且衬底相邻于金属层的部分露出。

    THREE-IN-ONE MARCEL WAVER WITH CURLING METHOD

    公开(公告)号:US20220361640A1

    公开(公告)日:2022-11-17

    申请号:US17318270

    申请日:2021-05-12

    Applicant: Peng Cheng

    Inventor: Peng Cheng

    Abstract: The three-in-one marcel waver with curling method in the field of hairdressing device is described, including the first hairdressing section, the second hairdressing section and a base. The first hairdressing section is movably connected to the base, and the second hairdressing section is fixedly connected to the base. The second hairdressing section consists of perming unit, combing unit, and switch button, with perming unit and switch button at the inner side, and the combing unit at the outer side. The perming unit links the second hairdressing section thanks to the arc-shaped transitional edges designed laterally. The combing unit comprises the first comb, the second comb, holder, the second comb hole, and the first comb hole. The holder has the second comb hole and the first comb hole. The invention features the integrated design of splint, electric comb and hair curler, meeting the needs of various hairstyles of terminal customers, and providing better user experience by catering to consumer demand.

    Method and apparatus for providing a three-dimensional data navigation and manipulation interface

    公开(公告)号:US10969833B2

    公开(公告)日:2021-04-06

    申请号:US13089870

    申请日:2011-04-19

    Applicant: Peng Cheng

    Inventor: Peng Cheng

    Abstract: Various methods for providing a multi-dimensional data interface are provided. One example method may include receiving first data navigation instructions for navigating data in a first dimension or a second dimension via a first user interface device, causing a presentation of the data to be modified within the first dimension or the second dimension in response to at least receiving the first data navigation instructions, receiving second data navigation instructions for navigating the data in a third dimension via a second user interface device, and causing the presentation of the data to be modified within a third dimension in response to at least receiving the second data navigation instructions. Similar and related example methods, example apparatuses, and example computer program products are also provided.

    UPLINK NOISE ESTIMATION FOR VIRTUAL MIMO
    39.
    发明申请
    UPLINK NOISE ESTIMATION FOR VIRTUAL MIMO 有权
    虚拟MIMO的上行噪声估计

    公开(公告)号:US20140064391A1

    公开(公告)日:2014-03-06

    申请号:US13878708

    申请日:2010-10-11

    Abstract: A system and methods for estimating a noise power level in an uplink signal for a virtual MIMO system is disclosed. The system comprises a demodulation reference signal (DMRS) module configured to obtain a DMRS receive symbol from the uplink signal and determine a DMRS sequence for a first UE in the virtual MIMO system. An autocorrelation module is configured to calculate an average autocorrelation value for the subcarriers in the uplink signal. A cross-correlation module is configured to calculate first and second cross-correlation values of the uplink signal Rz (l) for values of l selected such that the sum of the received power from the first UE and the second UE can be accurately estimated. A noise power level module is configured to determine the noise power level for the uplink signal using the average autocorrelation value and the first and second cross correlation values.

    Abstract translation: 公开了一种用于估计虚拟MIMO系统的上行链路信号中的噪声功率电平的系统和方法。 该系统包括解调参考信号(DMRS)模块,其被配置为从上行链路信号获得DMRS接收符号,并确定虚拟MIMO系统中的第一UE的DMRS序列。 自相关模块被配置为计算上行链路信号中的子载波的平均自相关值。 互相关模块被配置为针对所选择的l的值计算上行链路信号Rz(1)的第一和第二互相关值,使得可以准确地估计来自第一UE和第二UE的接收功率之和。 噪声功率电平模块被配置为使用平均自相关值和第一和第二互相关值来确定上行链路信号的噪声功率电平。

    Modulators of PPAR and methods of their preparation
    40.
    发明授权
    Modulators of PPAR and methods of their preparation 失效
    PPAR的调节剂及其制备方法

    公开(公告)号:US07622491B2

    公开(公告)日:2009-11-24

    申请号:US11202963

    申请日:2005-08-11

    Abstract: The present invention is directed to certain novel compounds represented by Formula (I) and pharmaceutically acceptable salts, solvates, hydrates and prodrugs thereof. The present invention is also directed to methods of making and using such compounds and pharmaceutical compositions containing such compounds to treat or control a number of diseases mediated by PPAR such as glucose metabolism, lipid metabolism and insulin secretion, specifically Type 2 diabetes, hyperinsulinemia, hyperlipidemia, hyperuricemia, hypercholesteremia, atherosclerosis, one or more risk factors for cardiovascular disease, Syndrome X, hypertriglyceridemia, hyperglycemia, obesity and eating disorders.

    Abstract translation: 本发明涉及由式(I)表示的某些新型化合物及其药学上可接受的盐,溶剂合物,水合物和前药。 本发明还涉及制备和使用这些化合物和含有这些化合物的药物组合物的方法,以治疗或控制由PPAR介导的许多疾病,例如葡萄糖代谢,脂质代谢和胰岛素分泌,特别是2型糖尿病,高胰岛素血症,高脂血症 高尿酸血症,高胆固醇血症,动脉粥样硬化,心血管疾病的一个或多个危险因素,X综合征,高甘油三酯血症,高血糖症,肥胖症和进食障碍。

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