Gradation display method
    31.
    发明授权
    Gradation display method 失效
    渐变显示方式

    公开(公告)号:US06943814B2

    公开(公告)日:2005-09-13

    申请号:US10263688

    申请日:2002-10-04

    CPC分类号: H04N1/4058

    摘要: In a gradation display method, an image is divided into pixels having fine areas, this pixel is furthermore divided into very fine pixels (Si) having very fine areas, and then gradation is displayed based upon a ratio of a colored very fine pixel (Si) with respect to all of very fine pixels (Si) within a pixel. Also, the above-described colored very fine pixel (Si) is formed by both a first growth core which is formed by increasing the number of colored very fine pixels of a single cluster, and a second growth core which is formed by increasing the number of colored very fine pixels of another single cluster.

    摘要翻译: 在灰度显示方法中,将图像划分为具有精细区域的像素,该像素进一步被划分为具有非常细小区域的非常精细的像素(Si),然后基于彩色非常精细像素(Si )相对于像素内的所有非常精细的像素(Si)。 另外,上述着色非常精细的像素(Si)由通过增加单个簇的有色非常精细的像素的数量形成的第一生长核心和通过增加数量而形成的第二生长核心构成 的另一个单一的集群的彩色非常精细的像素。

    Magnetic recording medium and method for manufacturing the same
    32.
    发明申请
    Magnetic recording medium and method for manufacturing the same 有权
    磁记录介质及其制造方法

    公开(公告)号:US20050138796A1

    公开(公告)日:2005-06-30

    申请号:US11062652

    申请日:2005-02-23

    摘要: Disclosed is a magnetic recording medium and a method for manufacturing the same to provide a magnetic recording medium reducing medium noise and having excellent thermal stability. The magnetic recording medium includes a substantially amorphous seed layer and a polycrystal underlayer made of crystal grains having a substantially columnar structure, the polycrystal underlayer contacting thereto. In a boundary between the seed layer and the underlayer, fine grooves having a period up to as large as the magnetic layer crystal grain diameter are formed in the disc circumferential direction. Accordingly, the magnetic recording medium is allowed to have a grain shape with a value obtained by dividing the average grain diameter for the disc circumferential direction by the average grain diameter for the disc radial direction of no less than 0.5 and no more than 0.9, thus achieving simultaneously reduction of the medium noise and thermal stability.

    摘要翻译: 公开了一种磁记录介质及其制造方法,以提供磁记录介质降低介质噪声并具有优异的热稳定性。 磁记录介质包括基本上无定形的种子层和由具有基本上柱状结构的晶粒制成的多晶底层,多晶底层与其接触。 在种子层和底层之间的边界处,在盘周向形成有具有与磁性层晶粒直径一样大的周期的细槽。 因此,使磁记录介质具有通过将盘圆周方向的平均粒径除以盘径向的平均粒径为不小于0.5且不大于0.9而获得的值的晶粒形状,因此 实现中等噪声和热稳定性的同时降低。

    Magnetic recording medium and magnetic recording apparatus
    33.
    发明授权
    Magnetic recording medium and magnetic recording apparatus 失效
    磁记录介质和磁记录装置

    公开(公告)号:US06830837B2

    公开(公告)日:2004-12-14

    申请号:US10046987

    申请日:2002-01-17

    IPC分类号: G11B566

    摘要: It is an object of the present invention to provide a high reliability magnetic storage apparatus capable of performing writing and reading back of high density information. The magnetic storage apparatus is so configured as to have a longitudinal magnetic recording medium including: a magnetic layer formed on a non-magnetic substrate via a plurality of underlayers; the magnetic layer including a lower magnetic layer containing Ru in an amount of not less than 3 at % to not more than 30 at %, and Cr in an amount of not less than 0 at % to not more than 18 at %, and further containing at least one of B or C in an amount of not less than 0 at % to not more than 20 at %, and an upper magnetic layer containing Co as a main component disposed thereon via a non-magnetic intermediate layer.

    摘要翻译: 本发明的目的是提供一种能够执行高密度信息的写入和读回的高可靠性磁存储装置。 磁存储装置被配置为具有纵向磁记录介质,其包括:通过多个底层在非磁性基板上形成的磁性层; 所述磁性层包括含有不小于3原子%至不超过30原子%的量的Ru的下磁性层,并且不少于0原子%至不大于18原子%的Cr, 含有不小于0at%至不超过20at%的B或C中的至少一个,以及经由非磁性中间层设置在其上的Co作为主要成分的上磁性层。

    Semiconductor laser device featuring group III and IV compounds doped
with amphoteric impurity to vary electrical resistance according to
direction of crystal plane
    34.
    发明授权
    Semiconductor laser device featuring group III and IV compounds doped with amphoteric impurity to vary electrical resistance according to direction of crystal plane 失效
    半导体激光器件具有掺杂有两性杂质的III和IV族化合物,以根据晶面的方向改变电阻

    公开(公告)号:US5375137A

    公开(公告)日:1994-12-20

    申请号:US932181

    申请日:1992-08-21

    摘要: There is provided a high-quality semiconductor laser device having a current confinement feature along with a method of manufacturing the same in a simple manner. The upper clad layer 4 of a semiconductor laser device is a semiconductive layer made of a compound of elements of the III and V groups doped with an amphoteric impurity substance and the electric resistance of the lateral slopes is greater on the top of the mesa than on the upper clad layer 4 of the mesa. A method of manufacturing a semiconductor laser device comprises a step of repeating a cycle of crystal growth operation of sequentially forming a layer of an element of the III group, a layer of an amphoteric impurity substance and a layer of an element of the V group on said substrate by means of an MBE technique to produce said upper clad layer made of a compound of elements of the III and V groups.

    摘要翻译: 提供了具有电流限制特征的高质量半导体激光器件及其制造方法。 半导体激光器件的上覆层4是由掺杂有两性杂质物质的III族和V族元素的化合物制成的半导电层,并且在台面顶部的横向斜率的电阻大于在 台面的上包层4。 一种制造半导体激光器件的方法包括以下步骤:重复一个循环的晶体生长操作,顺序地形成III族元素层,两性杂质物质层和V族元素层 所述衬底通过MBE技术产生由III族和V族元素的化合物制成的所述上覆层。

    PATTERNED MEDIA AND FABRICATION METHOD THEREOF
    35.
    发明申请
    PATTERNED MEDIA AND FABRICATION METHOD THEREOF 审中-公开
    图形介质及其制造方法

    公开(公告)号:US20110164336A1

    公开(公告)日:2011-07-07

    申请号:US12984352

    申请日:2011-01-04

    IPC分类号: G11B5/82 B05D5/12 C23C14/00

    摘要: Since the surface roughness of a recording layer get larger in the process of fabricating a patterned medium, the spacing between a head and the medium is widened. As a result, the recording performance and corrosion resistance of the medium are degraded. In the patterned medium, a recording layer includes one layer of a crystalline magnetic film or plural layers of crystalline magnetic films, and a magnetic film of an amorphous structure located on the outermost surface of the crystalline magnetic films. The compositional elements of the magnetic film of the amorphous structure are identical to those of the crystalline magnetic film located immediately under the magnetic film. In a fabrication method thereof, the surface of the crystalline magnetic film is turned into amorphous in order to form the magnetic film of the amorphous structure.

    摘要翻译: 由于在制造图案化介质的过程中记录层的表面粗糙度变大,所以头部和介质之间的间隔变宽。 结果,介质的记录性能和耐腐蚀性降低。 在图案化介质中,记录层包括一层结晶磁性膜或多层结晶磁性膜,以及位于结晶磁性膜的最外表面上的非晶结构的磁性膜。 无定形结构的磁性膜的组成元素与位于磁性膜正下方的结晶磁性膜的组成元素相同。 在其制造方法中,为了形成非晶结构的磁性膜,结晶磁性膜的表面变成无定形。

    Perpendicular magnetic recording medium and magnetic storage apparatus using the same
    39.
    发明授权
    Perpendicular magnetic recording medium and magnetic storage apparatus using the same 失效
    垂直磁记录介质及使用其的磁存储装置

    公开(公告)号:US06183893B2

    公开(公告)日:2001-02-06

    申请号:US09285751

    申请日:1999-04-05

    IPC分类号: B32B1500

    摘要: The present invention relates to a perpendicular magnetic recording medium and a magnetic storage apparatus which are improved to be suitable for high-density magnetic recording. An object thereof is to provide the perpendicular magnetic recording medium and the magnetic storage apparatus which have a low noise property for realizing a recording density of 10 Gb/in.2 or more and a high stability against thermal fluctuation. The perpendicular magnetic recording medium comprising a perpendicular magnetic film formed through an underlayer on a nonmagnetic substrate, wherein the underlayer comprises a material having a hexagonal close packed structure or an amorphous structure, and has a first underlayer nearer to the substrate, and a second underlayer having a hexagonal close packed structure formed on the first underlayer and a preferred growth orientation of [0001] and comprising a material capable of hetero-epitaxy growth onto the perpendicular magnetic film.

    摘要翻译: 本发明涉及一种改进为适合于高密度磁记录的垂直磁记录介质和磁存储装置。 其目的是提供具有低噪声特性的垂直磁记录介质和磁存储装置,以实现10Gb / in.2以上的记录密度和对热波动的高稳定性。垂直磁记录介质包括 在非磁性基板上通过下层形成的垂直磁性膜,其中,所述下层包括具有六方密堆积结构或非晶结构的材料,并且具有更靠近所述基板的第一底层和具有六方密堆积结构的第二底层 形成在第一底层上,并且具有优选的生长方向,并且包括能够在垂直磁性膜上进行异质外延生长的材料。