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    SEMICONDUCTOR DEVICE
    34.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20170040459A1

    公开(公告)日：2017-02-09

    申请号：US15296432

    申请日：2016-10-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

    IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

    Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

    Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM
    35.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM 有权
    半导体器件，制造半导体器件的方法和形成氧化膜的方法

    公开(公告)号：US20170018632A1

    公开(公告)日：2017-01-19

    申请号：US15281551

    申请日：2016-09-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kosei NODA ,  Suzunosuke HIRAISHI

    IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02

    CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

    Abstract: One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment.

    Abstract translation: 本发明的一个实施例是至少包括氧化物半导体膜，与氧化物半导体膜接触的栅极绝缘膜和与氧化物半导体膜重叠的栅电极的半导体器件，其间具有栅极绝缘膜。 氧化物半导体膜的自旋密度低于9.3×1016自旋/ cm3，载流子密度低于1×1015 / cm3。 通过电子自旋共振光谱法从在g值约为1.93的g值（g）检测的信号的峰值计算自旋密度。 通过溅射法形成氧化物半导体膜，同时向衬底侧供给偏压功率并控制自偏压，然后进行热处理。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    37.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20160181406A1

    公开(公告)日：2016-06-23

    申请号：US15057457

    申请日：2016-03-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

    IPC: H01L29/66 ,  H01L29/24 ,  H01L21/02 ,  H01L29/786 ,  H01L21/465 ,  H01L21/441

    CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/441 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

    Abstract: An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

    Abstract translation: 本发明的目的是提供一种包括控制载流子密度的氧氮化物半导体的半导体器件。 通过将控制氮引入到氧化物半导体层中，可以制造其中具有期望的载流子密度和特性的氧氮化物半导体用于沟道的晶体管。 此外，通过使用氧氮化物半导体，即使在氮氧化物半导体层和源电极之间以及氧氮化物半导体层和漏电极之间没有设置低电阻层等的情况下，也可以表现出良好的接触特性。

    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    38.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 审中-公开
    半导体器件和电子器件

    公开(公告)号：US20160149044A1

    公开(公告)日：2016-05-26

    申请号：US14941854

    申请日：2015-11-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kosei NODA

    IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423

    CPC classification number: H01L29/7869 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/90 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78696

    Abstract: To provide a highly reliable semiconductor device that is suitable for miniaturization and higher density. A semiconductor device includes a first electrode including a protruding portion, a first insulator over the protruding portion, a second insulator covering the first electrode and the first insulator, and a second electrode over the second insulator. The second electrode includes a first region which overlaps with the first electrode with the first insulator and the second insulator provided therebetween and a second region which overlaps with the first electrode with the second insulator provided therebetween. The peripheral portion of the second electrode is provided in the first region.

    Abstract translation: 提供适用于小型化和高密度的高度可靠的半导体器件。 半导体器件包括：第一电极，包括突出部分，突出部分上的第一绝缘体，覆盖第一电极和第一绝缘体的第二绝缘体，以及覆盖在第二绝缘体上的第二电极。 第二电极包括与第一电极重叠的第一区域，第一绝缘体和第二绝缘体设置在第一区域之间，第二区域与第一电极重叠，第二绝缘体设置在第二区域之间。 第二电极的周边部分设置在第一区域中。

    SEMICONDUCTOR DEVICE
    39.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160118418A1

    公开(公告)日：2016-04-28

    申请号：US14989927

    申请日：2016-01-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

    IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

    Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

    Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    40.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20150187955A1

    公开(公告)日：2015-07-02

    申请号：US14658391

    申请日：2015-03-16

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Kosei NODA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Hotaka MARUYAMA

    IPC: H01L29/786 ,  H01L29/24

    CPC classification number: H01L29/78606 ,  H01L23/5329 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

    Abstract translation: 本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。 覆盖薄膜晶体管的氧化物半导体层的绝缘层包含硼元素或铝元素。 通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。 或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

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