公开(公告)号：US20210320290A9

公开(公告)日：2021-10-14

申请号：US17064724

申请日：2020-10-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/134 ,  H01M4/131 ,  H01M4/525 ,  H01M4/36 ,  H01M10/0525

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20210305530A1

公开(公告)日：2021-09-30

申请号：US17337569

申请日：2021-06-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoko SHITAGAKI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Hideko INOUE ,  Masahiro TAKAHASHI ,  Kunihiko SUZUKI

IPC: H01L51/50 ,  H01L51/00 ,  H05B33/14 ,  C09K11/02 ,  C09K11/06 ,  H01L51/52

Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.

公开(公告)号：US20210159345A1

公开(公告)日：2021-05-27

申请号：US17167163

申请日：2021-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US20210083281A1

公开(公告)日：2021-03-18

申请号：US16611791

申请日：2018-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi MIKAMI ,  Aya UCHIDA ,  Yumiko YONEDA ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Teruaki OCHIAI

IPC: H01M4/525 ,  H01M4/131 ,  H01M4/134 ,  H01M4/133 ,  H01M4/505 ,  H01M4/36 ,  H01M4/139 ,  H01M10/0525 ,  C01G53/00

Abstract: A positive electrode active material having high capacity and excellent cycle performance is provided. The positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charge and discharge as compared with those of a known positive electrode active material.

公开(公告)号：US20180145368A1

公开(公告)日：2018-05-24

申请号：US15810989

申请日：2017-11-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Ayae TSURUTA ,  Masahiro TAKAHASHI

IPC: H01M10/0525 ,  H01M4/02 ,  H01M4/525

CPC classification number: H01M10/0525 ,  H01M4/02 ,  H01M4/366 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M2004/028 ,  Y02E60/13

Abstract: Positive electrode active material particles that inhibit a decrease in capacity due to charge and discharge cycles are provided. A high-capacity secondary battery, a secondary battery with excellent charge and discharge characteristics, or a highly-safe or highly-reliable secondary battery is provided. A novel material, active material particles, and a storage device are provided. The positive electrode active material particle includes a first region and a second region in contact with the outside of the first region. The first region contains lithium, oxygen, and an element M that is one or more elements selected from cobalt, manganese, and nickel. The second region contains the element M, oxygen, magnesium, and fluorine. The atomic ratio of lithium to the element M (Li/M) measured by X-ray photoelectron spectroscopy is 0.5 or more and 0.85 or less. The atomic ratio of magnesium to the element M (Mg/M) is 0.2 or more and 0.5 or less.

公开(公告)号：US20170025542A1

公开(公告)日：2017-01-26

申请号：US15286962

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/36 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/36 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

Abstract translation: 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 以高产率制造半导体器件，从而实现高生产率。 在包括在氧化物半导体膜上设置有源电极层和漏极电极层并与氧化物半导体膜接触的晶体管的半导体器件中，抑制了氧化物半导体膜的端面部分中杂质的进入和氧空位的形成 。 这可以防止在氧化物半导体膜的端面部分形成寄生沟道而导致的晶体管的电特性的波动。

公开(公告)号：US20150311291A1

公开(公告)日：2015-10-29

申请号：US14734029

申请日：2015-06-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Masashi OOTA

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

Abstract translation: 提供了包括氧化物半导体的高度可靠的半导体器件。 提供了一种半导体器件，包括氧化物半导体层，与氧化物半导体层接触的绝缘层，与氧化物半导体层重叠的栅极电极层，以及与氧化物半导体层电连接的源极电极层和漏极电极层 。 氧化物半导体层包括具有尺寸小于或等于10nm的晶体的第一区域和与其间设置有第一区域的绝缘层重叠的第二区域，并且其包括其c轴对准的晶体部分 与氧化物半导体层的表面的法线矢量平行的方向。

公开(公告)号：US20150249123A1

公开(公告)日：2015-09-03

申请号：US14709871

申请日：2015-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI

IPC: H01L29/04 ,  H01L29/26 ,  H01L29/786

CPC classification number: H01L29/045 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/26 ,  H01L29/45 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor including the oxide semiconductor film in its channel formation region, and a highly reliable semiconductor device including the transistor. The oxide semiconductor film including indium includes a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor film. In the crystal part, the length of a crystal arrangement part containing indium and oxygen on a plane perpendicular to the c-axis is more than 1.5 nm. Further, the semiconductor device includes the transistor including the oxide semiconductor film in its channel formation region.

Abstract translation: 为了提供具有高稳定性并且不容易引起晶体管的电特性变化的氧化物半导体膜，包括其沟道形成区域中的氧化物半导体膜的晶体管，以及包括晶体管的高可靠性半导体器件。 包括铟的氧化物半导体膜包括其c轴基本上垂直于氧化物半导体膜的表面的晶体部分。 在晶体部分中，在与c轴垂直的平面上含有铟和氧的晶体配置部分的长度大于1.5nm。 此外，半导体器件包括在其沟道形成区域中包括氧化物半导体膜的晶体管。

公开(公告)号：US20150162450A1

公开(公告)日：2015-06-11

申请号：US14621838

申请日：2015-02-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/10 ,  H01L29/41733

Abstract: A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

Abstract translation: 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US20150079731A1

公开(公告)日：2015-03-19

申请号：US14551754

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kunihiko SUZUKI ,  Masahiro TAKAHASHI

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02664 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L23/564 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.

Abstract translation: 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 使用以氟或氯为代表的卤素元素，从氧化物半导体层中除去氢或水分等杂质（例如氢原子或含有氢原子的化合物，例如H 2 O），使得杂质浓度 氧化物半导体层减少。 可以形成与氧化物半导体层接触设置的栅极绝缘层和/或绝缘层以含有卤素元素。 此外，卤素元素可以在含有卤素元素的气体的气氛下通过等离子体处理附着到氧化物半导体层。