公开(公告)号：US10903263B2

公开(公告)日：2021-01-26

申请号：US16340879

申请日：2017-10-10

Applicant: Soitec

Inventor： Walter Schwarzenbach

IPC: H01L27/146 ,  H01L21/762

Abstract: A front-side type image sensor includes a substrate successively comprising a P− type doped semiconducting support substrate, an electrically insulating layer and a semiconducting active layer, and a matrix array of photodiodes in the active layer of the substrate, wherein the substrate comprises, between the support substrate and the electrically insulating layer, a P+ type doped semiconducting epitaxial layer A method of forming such a structure includes epitaxially growing a P+ type doped semiconducting layer on a P− type doped semiconducting support substrate, providing an electrically insulating layer and an active layer over the P+ type doped semiconducting layer, and forming photodiodes in the active layer.

公开(公告)号：US20200152689A1

公开(公告)日：2020-05-14

申请号：US16495362

申请日：2018-03-21

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L27/146 ,  H01L31/028 ,  H01L21/762

Abstract: A semiconductor on insulator type structure, which may be sued for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

公开(公告)号：US20130295696A1

公开(公告)日：2013-11-07

申请号：US13933779

申请日：2013-07-02

Applicant: Soitec

Inventor： Sébastien Kerdiles ,  Walter Schwarzenbach ,  Aziz Alami-Idrissi

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  H01L21/02032 ,  H01L21/76254

Abstract: The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions which are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.

Abstract translation: 本发明涉及一种用于将层从施主衬底转移到手柄衬底上的方法，其中，在剥离之后，再次使用剩余的施主衬底。 为了摆脱由于基板的倒角几何形状引起的不期望的突出边缘区域，本发明提出在分离发生之前执行附加的蚀刻工艺。

公开(公告)号：US12272720B2

公开(公告)日：2025-04-08

申请号：US18145976

申请日：2022-12-23

Applicant: Soitec

Inventor： Walter Schwarzenbach

IPC: H01L27/146 ,  H01L21/762

Abstract: A front-side type image sensor may include a substrate successively including: a P− type doped semiconducting support substrate, an electrically insulating layer and a semiconducting active layer, and a matrix array of photodiodes in the active layer of the substrate. The substrate may include, between the support substrate and the electrically insulating layer, a P+ type doped semiconducting epitaxial layer.

公开(公告)号：US20230127950A1

公开(公告)日：2023-04-27

申请号：US18145976

申请日：2022-12-23

Applicant: Soitec

Inventor： Walter Schwarzenbach

IPC: H01L27/146 ,  H01L21/762

Abstract: A front-side type image sensor may include a substrate successively including: a P− type doped semiconducting support substrate, an electrically insulating layer and a semiconducting active layer, and a matrix array of photodiodes in the active layer of the substrate. The substrate may include, between the support substrate and the electrically insulating layer, a P+ type doped semiconducting epitaxial layer.

公开(公告)号：US20230063362A1

公开(公告)日：2023-03-02

申请号：US18047113

申请日：2022-10-17

Applicant: Soitec

Inventor： Walter Schwarzenbach

IPC: H01L21/762 ,  H01L21/84 ,  H01L27/12

Abstract: A method of forming a substrate comprises providing a receiver substrate and a donor substrate successively comprising: a carrier substrate, a sacrificial layer, which can be selectively etched in relation to an active layer, and a silicon oxide layer, which is arranged on the active layer. A cavity is formed in the oxide layer to form a first portion that has a first thickness and a second portion that has a second thickness greater than the first thickness. The cavity is filled with a polycrystalline silicon filling layer to form a second free surface that is continuous and substantially planar. The receiver substrate and the donor substrate are assembled at the second free surface, and the carrier substrate is eliminated while preserving the active layer and the sacrificial layer.

公开(公告)号：US20230032336A1

公开(公告)日：2023-02-02

申请号：US17756431

申请日：2020-11-24

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Laurent Viravaux

IPC: H01L21/762 ,  H01L21/67

Abstract: A method for bonding a first substrate and a second substrate comprises bringing the first and second substrates into contact and implementing heating of a peripheral zone of at least one of the first and second substrates. The heating is initiated before the substrates are brought into contact and continued at least until the substrates are brought into contact in the zone. The heating is implemented by an infrared lamp configured to emit radiation having an outer boundary corresponding to the edge of the substrates.

公开(公告)号：US20220076993A1

公开(公告)日：2022-03-10

申请号：US17418117

申请日：2019-12-23

Applicant: Soitec

Inventor： Yvan Morandini ,  Walter Schwarzenbach ,  Frédéric Allibert ,  Eric Desbonnets ,  Bich-Yen Nguyen

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/322 ,  H01L27/12 ,  H01L29/06

Abstract: The present disclosure relates to a multilayer semiconductor-on-insulator structure, comprising, successively from a rear face toward a front face of the structure: a semiconductor carrier substrate with high electrical resistivity, whose electrical resistivity is between 500 Ω·cm and 30 kΩ·cm, a first electrically insulating layer, an intermediate layer, a second electrically insulating layer, which has a thickness less than that of the first electrically insulating layer, an active semiconductor layer, the multilayer structure comprises: at least one FD-SOI region, in which the intermediate layer is an intermediate first semiconductor layer, at least one RF-SOI region, adjacent to the FD-SOI region, in which the intermediate layer is a third electrically insulating layer, the RF-SOI region comprising at least one radiofrequency component plumb with the third electrically insulating layer.

公开(公告)号：US11205702B2

公开(公告)日：2021-12-21

申请号：US16086275

申请日：2017-03-31

Applicant: Soitec

Inventor： Christophe Figuet ,  Ludovic Ecarnot ,  Bich-Yen Nguyen ,  Walter Schwarzenbach ,  Daniel Delprat ,  Ionut Radu

IPC: H01L29/161 ,  H01L23/00 ,  H01L21/306

Abstract: A method for manufacturing a structure comprising a first substrate comprising at least one electronic component likely to be damaged by a temperature higher than 400° C. and a semiconductor layer extending on the first substrate comprises: (a) providing a first bonding metal layer on the first substrate, (b) providing a second substrate comprising successively: a semiconductor base substrate, a stack of a plurality of semiconductor epitaxial layers, a layer of SixGe1-x, with 0≤x≤1 being located at the surface of said stack opposite to the base substrate, and a second bonding metal layer, (c) bonding the first substrate and the second substrate through the first and second bonding metal layers at a temperature lower than or equal to 400° C., and (d) removing a part of the second substrate so as to transfer the layer of SixGe1-x on the first substrate using a selective etching process.

公开(公告)号：US11127624B2

公开(公告)日：2021-09-21

申请号：US16495362

申请日：2018-03-21

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L21/762 ,  H01L27/146 ,  H01L31/028 ,  H01L21/02 ,  H01L21/203

Abstract: A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.