公开(公告)号：US10073219B2

公开(公告)日：2018-09-11

申请号：US15051904

申请日：2016-02-24

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot

IPC: G02B6/12 ,  H01L21/763 ,  G02B6/122 ,  G02F1/025

CPC classification number: G02B6/122 ,  G02B6/12004 ,  G02B2006/12097 ,  G02B2006/121 ,  G02F1/025

Abstract: An integrated circuit includes an active device for confinement of a light flux that is formed in a semiconducting substrate. A confinement rib is separated from two doped zones by two trenches. Each doped zone includes a contacting zone on an upper face. Each trench widens from a bottom wall towards the upper face of the corresponding doped zone. The widening trenches present a sidewall having a tiered profile between the trench and the doped zone. An opposite sidewall presents a straight profile.

公开(公告)号：US10042115B2

公开(公告)日：2018-08-07

申请号：US15132408

申请日：2016-04-19

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Frédéric Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768

Abstract: An electro-optic device may include a substrate layer, and a first photonic layer over the substrate layer and having a first photonic device. The electro-optic device may include a second photonic layer over the first photonic layer and having a second photonic device. The electro-optic device may include a dielectric layer over the second photonic layer, and a first electrically conductive via extending through the dielectric layer and the second photonic layer to couple to the first photonic device, and a second electrically conductive via extending through the dielectric layer and coupling to the second photonic device. The electro-optic device may include a third electrically conductive via extending through the substrate layer, the second photonic layer, and the first photonic layer to couple to the substrate layer.

公开(公告)号：US20180136496A1

公开(公告)日：2018-05-17

申请号：US15868642

申请日：2018-01-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Maurin Douix ,  Frederic Boeuf ,  Sébastien Cremer

IPC: G02F1/025 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F2001/0151

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

公开(公告)号：US09891450B2

公开(公告)日：2018-02-13

申请号：US15084645

申请日：2016-03-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles Baudot ,  Maurin Douix ,  Frédéric Boeuf ,  Sébastien Cremer

IPC: G02F1/035 ,  G02F1/025 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F2001/0151

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

公开(公告)号：US20170363507A1

公开(公告)日：2017-12-21

申请号：US15694156

申请日：2017-09-01

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMICROELECTRONICS SA

Inventor： Jean-Francois Carpentier ,  Patrick Le Maitre ,  Jean-Robert Manouvrier ,  Charles Baudot ,  Bertrand Borot

IPC: G01M11/02 ,  G02B6/12 ,  G02B6/28 ,  G02B6/34

CPC classification number: G01M11/02 ,  G01M11/33 ,  G01R31/2656 ,  G01R31/27 ,  G01R31/2884 ,  G01R31/303 ,  G01R31/311 ,  G01R31/31728 ,  G01R35/00 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/2808 ,  G02B6/34

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

公开(公告)号：US09269570B2

公开(公告)日：2016-02-23

申请号：US13860845

申请日：2013-04-11

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Yves Morand ,  Charles Baudot ,  Fabrice Nemouchi

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/02381 ,  H01L21/28518

Abstract: A method is provided for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer.

Abstract translation: 提供了一种从由不同半导体材料制成的半导体区域制造具有由金属和半导体化合物制成的多个区域的微电子器件的方法，并且在沉积金属层之前在其上形成薄的半导体层以便降低 当与金属层反应时，半导体区的成核势垒。

公开(公告)号：US11474317B2

公开(公告)日：2022-10-18

申请号：US16748696

申请日：2020-01-21

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Francois Carpentier ,  Charles Baudot

IPC: G02B6/42 ,  G02B6/43 ,  G02B6/12 ,  G02B6/13

Abstract: A photonic system includes a first photonic circuit having a first face and a second photonic circuit having a second face. The first photonic circuit comprises first wave guides, and, for each first wave guide, a second wave guide covering the first wave guide, the second wave guides being in contact with the first face and placed between the first face and the second face, the first wave guides being located on the side of the first face opposite the second wave guides. The second photonic circuit comprises, for each second wave guide, a third wave guide covering the second wave guide. The first photonic circuit comprises first positioning devices projecting from the first face and the second photonic circuit comprises second positioning devices projecting from the second face, at least one of the first positioning devices abutting one of the second positioning devices in a first direction.

公开(公告)号：US20220252912A1

公开(公告)日：2022-08-11

申请号：US17661356

申请日：2022-04-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot

IPC: G02F1/025 ,  G02F1/01 ,  G02F1/225 ,  G02F1/017 ,  H01L21/02

Abstract: In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

公开(公告)号：US11169325B2

公开(公告)日：2021-11-09

申请号：US16295929

申请日：2019-03-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/14

Abstract: An optical waveguide is configured to propagate a light signal. Metal vias are arranged along and on either side of a portion of the optical waveguide. Additional metal vias are further arranged along and on either side of the optical waveguide both upstream and downstream of the portion of the optical waveguide. The metal vias and additional metal vias are oriented orthogonal to a same plane, the same plane being orthogonal to a transverse cross-section of the portion of the optical waveguide.

公开(公告)号：US11107941B2

公开(公告)日：2021-08-31

申请号：US16292525

申请日：2019-03-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Sebastien Cremer ,  Nathalie Vulliet ,  Denis Pellissier-Tanon

IPC: H01L31/105 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/028

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.