公开(公告)号：US09791346B1

公开(公告)日：2017-10-17

申请号：US15133614

申请日：2016-04-20

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Francois Carpentier ,  Patrick Lemaitre ,  Jean-Robert Manouvrier ,  Charles Baudot ,  Bertrand Borot

IPC: G01B9/00 ,  G01M11/02 ,  G02B6/28 ,  G02B6/34 ,  G02B6/12

CPC classification number: G01M11/02 ,  G01R31/2656 ,  G01R31/27 ,  G01R31/2884 ,  G01R31/303 ,  G01R31/311 ,  G01R31/31728 ,  G01R35/00 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/2808 ,  G02B6/34

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

公开(公告)号：US09645469B2

公开(公告)日：2017-05-09

申请号：US14836011

申请日：2015-08-26

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS SA

Inventor： Patrick Lemaitre ,  Jean-Francois Carpentier ,  Charles Baudot ,  Jean-Robert Manouvrier

IPC: G02F1/225 ,  G02F1/025 ,  G02F1/21

CPC classification number: G02F1/225 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15

Abstract: An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one E/O amplitude modulator is coupled to at least one of the first and second optical waveguide arms. An optical combiner is coupled to the first and second optical waveguide arms downstream from the at least one E/O amplitude modulator.

公开(公告)号：US10139563B2

公开(公告)日：2018-11-27

申请号：US14984563

申请日：2015-12-30

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles Baudot ,  Alain Chantre ,  Sébastien Cremer

IPC: G02B6/34 ,  G02B6/122 ,  G02B6/136 ,  G02B6/132 ,  G02B6/42 ,  G02B6/12

Abstract: A method is for making a photonic chip including EO devices having multiple thicknesses. The method may include forming a first semiconductor layer over a semiconductor film, forming a second semiconductor layer over the first semiconductor layer, and forming a mask layer over the second semiconductor layer. The method may include performing a first selective etching of the mask layer to provide initial alignment trenches, performing a second etching, aligned with some of the initial alignment trenches and using the first semiconductor layer as an etch stop, to provide multi-level trenches, and filling the multi-level trenches to make the EO devices having multiple thicknesses.

公开(公告)号：US20170363507A1

公开(公告)日：2017-12-21

申请号：US15694156

申请日：2017-09-01

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMICROELECTRONICS SA

Inventor： Jean-Francois Carpentier ,  Patrick Le Maitre ,  Jean-Robert Manouvrier ,  Charles Baudot ,  Bertrand Borot

IPC: G01M11/02 ,  G02B6/12 ,  G02B6/28 ,  G02B6/34

CPC classification number: G01M11/02 ,  G01M11/33 ,  G01R31/2656 ,  G01R31/27 ,  G01R31/2884 ,  G01R31/303 ,  G01R31/311 ,  G01R31/31728 ,  G01R35/00 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/2808 ,  G02B6/34

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

公开(公告)号：US10274395B2

公开(公告)日：2019-04-30

申请号：US15694156

申请日：2017-09-01

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMICROELECTRONICS SA

Inventor： Jean-Francois Carpentier ,  Patrick Le Maitre ,  Jean-Robert Manouvrier ,  Charles Baudot ,  Bertrand Borot

IPC: G01M11/02 ,  G02B6/28 ,  G02B6/34 ,  G02B6/12 ,  G01R31/265 ,  G01R31/27 ,  G01R31/28 ,  G01R31/303 ,  G01R31/311 ,  G01R31/317 ,  G01R35/00 ,  G02B6/00 ,  G01M11/00

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

公开(公告)号：US09461441B2

公开(公告)日：2016-10-04

申请号：US14945859

申请日：2015-11-19

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Alain Chantre ,  Charles Baudot ,  Sébastien Cremer

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/125 ,  H01S5/22 ,  H01S5/02 ,  H01S5/065

CPC classification number: H01S5/026 ,  G02B6/12004 ,  G02B6/1225 ,  G02B6/132 ,  G02B6/136 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0267 ,  H01S5/0268 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0656 ,  H01S5/1032 ,  H01S5/1035 ,  H01S5/125 ,  H01S5/22 ,  H01S5/2206

Abstract: A photonic integrated circuit includes a first insulating region encapsulating at least one metallization level, a second insulating region at least partially encapsulating a gain medium of a laser source, and a stacked structure placed between the two insulating regions. The stacked structure includes a first polycrystalline or single-crystal silicon layer, a second polycrystalline or single-crystal silicon layer, an intermediate layer optically compatible with the wavelength of the laser source and selectively etchable relative to silicon and that separates the first layer from a first portion of the second layer, and the gain medium facing at least one portion of the first layer. The first layer, the intermediate layer, and the first portion of the second layer form an assembly containing a resonant cavity and a waveguide, which are optically coupled to the gain medium, and a second portion of the second layer containing at least one other photonic component.

Abstract translation: 光子集成电路包括封装至少一个金属化水平的第一绝缘区域，至少部分地封装激光源的增益介质的第二绝缘区域和放置在两个绝缘区域之间的层叠结构。 层叠结构包括第一多晶或单晶硅层，第二多晶或单晶硅层，与激光源的波长光学兼容并且可相对于硅选择性地蚀刻的中间层，并且将第一层与 所述第二层的第一部分和所述增益介质面向所述第一层的至少一部分。 第一层，中间层和第二层的第一部分形成包含谐振腔和波导的组件，光学耦合到增益介质，第二层的第二部分包含至少一个其他光子 零件。

公开(公告)号：US11604371B2

公开(公告)日：2023-03-14

申请号：US17661356

申请日：2022-04-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot

IPC: G02F1/025 ,  G02F1/01 ,  G02F1/017 ,  G02F1/225 ,  H01L21/02 ,  B82Y20/00

Abstract: In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

公开(公告)号：US10288806B2

公开(公告)日：2019-05-14

申请号：US15367901

申请日：2016-12-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot

IPC: G02B6/125 ,  G02B6/122 ,  G02B6/136 ,  G02B6/12

Abstract: A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region the includes a bulge region.

公开(公告)号：US10261252B2

公开(公告)日：2019-04-16

申请号：US16133064

申请日：2018-09-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/26 ,  G02B6/122 ,  G02B6/43 ,  G02B6/30 ,  G02B6/14 ,  G02B6/138 ,  G02B6/13 ,  G02B6/126 ,  G02B6/12

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

公开(公告)号：US10101528B2

公开(公告)日：2018-10-16

申请号：US15692571

申请日：2017-08-31

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/26 ,  G02B6/122 ,  G02B6/30 ,  G02B6/14 ,  G02B6/138 ,  G02B6/13 ,  G02B6/43

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.