公开(公告)号：US10409126B2

公开(公告)日：2019-09-10

申请号：US13782823

申请日：2013-03-01

Applicant: SAMSUNG DISPLAY CO., LTD. ,  KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION

Inventor： Jihun Lim ,  Byung Du Ahn ,  Gun Hee Kim ,  Junhyun Park ,  Jehun Lee ,  Jaewoo Park ,  Dae Hwan Kim ,  Hyunkwang Jung ,  Jaehyeong Kim

IPC: H01L51/10 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/417 ,  H01L29/786

Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.

公开(公告)号：US09583633B2

公开(公告)日：2017-02-28

申请号：US14392369

申请日：2014-02-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung Du Ahn ,  Gun Hee Kim ,  Yeon-Hong Kim ,  Jin Hyun Park ,  Shuji Kosaka ,  Kazushi Hayashi

IPC: H01L29/10 ,  H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969

Abstract: In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm−3 or less, and a mobility satisfies 15 cm2/Vs or more.

Abstract translation: 在本发明的薄膜晶体管用半导体层用氧化物中，构成氧化物的金属元素为In，Zn，Sn，在半导体中沉积氧化物时的氧分压为15体积％以上 薄膜晶体管的层，氧化物的缺陷密度为7.5×10 15 cm -3以下，迁移率为15cm 2 / Vs以上。

公开(公告)号：US20150249159A1

公开(公告)日：2015-09-03

申请号：US14436241

申请日：2013-10-15

Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) ,  Samsung Display Co., Ltd.

Inventor： Hiroaki Tao ,  Takeaki Maeda ,  Aya Miki ,  Toshihiro Kugimiya ,  Byung Du Ahn ,  So Young Koo ,  Gun Hee Kim

IPC: H01L29/786

CPC classification number: H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

Abstract translation: 提供一种薄膜晶体管，其中形成在氧化物半导体层和保护膜之间的界面上的突起的形状被适当地控制，并且实现了稳定的特性。 该薄膜晶体管的特征在于：薄膜晶体管具有由至少含有In，Zn和Sn作为金属元素的氧化物和与氧化物半导体层直接接触的保护膜形成的氧化物半导体层; 在与保护膜直接接触的氧化物半导体层表面上形成的突起的最大高度小于5nm。

公开(公告)号：US08912027B2

公开(公告)日：2014-12-16

申请号：US13733820

申请日：2013-01-03

Applicant: Samsung Display Co., Ltd.

Inventor： Byung Du Ahn ,  Kyoung Won Lee ,  Gun Hee Kim ,  Young Joo Choi

IPC: H01L33/44 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L33/44 ,  H01L27/1225 ,  H01L29/7869

Abstract: A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper.

Abstract translation: 根据本发明的示例性实施例的显示装置包括半导体层; 设置在半导体层上的数据线，以及设置在半导体层上并面向源电极的源电极以及漏电极。 半导体层由包括铟，锡和锌的氧化物半导体制成。 氧化物半导体中的铟的原子百分比等于或大于约10原子％且等于或小于约90原子％，氧化物半导体中的锌的原子百分比等于或大于约5原子％，以及 等于或小于约60at％，并且氧化物半导体中的锡的原子百分比等于或大于约5at％且等于或小于约45at％，并且数据线和漏电极包括 铜。

公开(公告)号：US20130271687A1

公开(公告)日：2013-10-17

申请号：US13782823

申请日：2013-03-01

Applicant: KOOMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION ,  SAMSUNG DISPLAY CO., LTD.

Inventor： Jihun Lim ,  Byung Du Ahn ,  Gun Hee Kim ,  Junhyun Park ,  Jehun Lee ,  Jaewoo Park ,  Dae Hwan Kim ,  Hyunkwang Jung ,  Jaehyeong Kim

IPC: G02F1/1368 ,  H01L29/786

CPC classification number: G02F1/1368 ,  G02F1/1362 ,  G02F1/136286 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/41783 ,  H01L29/7869 ,  H01L51/105

Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.

Abstract translation: 薄膜晶体管包括栅电极，设置为覆盖栅电极的第一绝缘层，设置在第一绝缘层上的半导体层，其包括第一侧表面部分，设置在半导体层上的源电极和漏电极 设置在包括第二侧表面部分的第一绝缘层上。 第一侧面部与第二侧面部接触。

公开(公告)号：US12219835B2

公开(公告)日：2025-02-04

申请号：US18387145

申请日：2023-11-06

Applicant: Samsung Display Co., LTD.

Inventor： Sun Ho Kim ,  Gun Hee Kim ,  Dong Hwan Shim ,  Tae Hoon Yang ,  Sun Hee Lee

IPC: H10K59/131 ,  H10K59/121

Abstract: A display device includes a display area which includes a first display area including a plurality of first pixels and a second display area including at least one second pixel and at least one light-transmitting portion, a peripheral area disposed around the display area, a data line including a first portion and a second portion spaced apart from each other in a predetermined direction with the light-transmitting portion therebetween, and a conductive pattern disposed at a different conductive layer from the data line. The conductive pattern includes a first pattern portion including a bypass portion that bypasses a periphery of the second display area in a plan view and disposed in the first display area, and the first pattern portion includes a first end electrically connected to the first portion of the data line and a second end electrically connected to the second portion of the data line.

公开(公告)号：US12183283B2

公开(公告)日：2024-12-31

申请号：US18106950

申请日：2023-02-07

Applicant: Samsung Display Co., Ltd.

Inventor： Kwang Soo Bae ,  Gun Hee Kim ,  Hyoeng-Ki Kim ,  Dae-Young Lee ,  Sun Hee Lee ,  Sanghwan Cho

IPC: G09G3/3233 ,  H10K39/34 ,  H10K59/122 ,  H10K59/35 ,  H10K65/00

Abstract: A display device includes: a base layer; a display element layer on the base layer, and including a light emitting element, a light detection element, and a photovoltaic element adjacent to one another; a light shielding layer on the display element layer, and having a plurality of opening parts; and a color filter layer on the display element layer, and covering the plurality of opening parts. The light detection element and the photovoltaic element are located at the same layer as each other, the light detection element is to detect an external input based on incident light from the outside, and the photovoltaic element is to generate electrical energy based on the incident light.

公开(公告)号：US12057509B2

公开(公告)日：2024-08-06

申请号：US17544353

申请日：2021-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do Hyung Kim ,  Gun Hee Kim ,  Hyeon Sik Kim ,  Sang Ho Park ,  Joo Hee Jeon

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L29/78621 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/7869 ,  H10K59/1213

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

公开(公告)号：US11937455B2

公开(公告)日：2024-03-19

申请号：US17498992

申请日：2021-10-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hye Won Kim ,  Sun Hee Lee ,  Ju Chan Park ,  Gun Hee Kim ,  Ok-Kyung Park

IPC: H10K59/121 ,  G09G3/3225 ,  H10K50/80 ,  H10K59/131 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/121 ,  G09G3/3225 ,  H10K50/80 ,  H10K59/131 ,  H10K77/111 ,  H10K2102/311

Abstract: A display device includes a substrate having a first main display area, a second main display area, and a sub-display area positioned between the first main display area and the second main display area; a first driving circuit positioned on the sub-display area of the substrate; a first sub-pixel circuit and a second sub-pixel circuit positioned on respective sides of the first driving circuit in the sub-display area of the substrate; a first sub-light-emitting device connected to the first sub-pixel circuit and overlapping the first driving circuit; and a second sub-light-emitting device connected to the second sub-pixel circuit and overlapping the first driving circuit.

公开(公告)号：US11812653B2

公开(公告)日：2023-11-07

申请号：US17361020

申请日：2021-06-28

Applicant: Samsung Display Co., Ltd.

Inventor： Sun Ho Kim ,  Sun Hee Lee ,  Gun Hee Kim ,  Dong Hwan Shim ,  Yoo Min Ko ,  Chea Eun Kim

IPC: H01L21/00 ,  H10K59/65 ,  G01S17/04 ,  H10K50/86 ,  H10K59/38 ,  H10K59/40 ,  H10K59/88 ,  H10K59/121 ,  H10K59/122 ,  H10K59/131 ,  G06V40/19 ,  H04N23/57

CPC classification number: H10K59/65 ,  G01S17/04 ,  H10K50/865 ,  H10K59/121 ,  H10K59/122 ,  H10K59/131 ,  H10K59/38 ,  H10K59/40 ,  H10K59/88 ,  G06V40/19 ,  H04N23/57

Abstract: A display device includes: a display panel including a first region including a transmissive part configured to transmit light provided from the outside and a second region not including the transmissive part; and a sensor overlapping with the transmissive part, and configured to obtain electrical information based on information provided from the outside, wherein the display panel includes: a thin film transistor layer including a plurality of transistors; a pixel defining layer defining an emission region of a plurality of pixels; and a light blocking layer on the pixel defining layer, and defining the transmissive part, and wherein the pixel defining layer in the first region covers at least a portion of the thin film transistor layer such that light provided through the transmissive part is blocked.