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31.发明授权公开(公告)号：US11588034B2
公开(公告)日：2023-02-21
申请号：US17060696
申请日：2020-10-01
Inventor： Minhyun Lee , Minsu Seol , Ho Won Jang , Yeonchoo Cho , Hyeonjin Shin
IPC: H01L29/423 , H01L29/04 , H01L29/06 , H01L29/16 , H01L29/66
Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.
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公开(公告)号：US11563116B2
公开(公告)日：2023-01-24
申请号：US17201485
申请日：2021-03-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Minsu Seol , Yeonchoo Cho , Hyeonjin Shin
IPC: H01L29/778 , H01L29/24 , H01L29/786 , H01L29/417 , H01L27/092 , H01L29/78
Abstract: A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
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公开(公告)号：US11508814B2
公开(公告)日：2022-11-22
申请号：US17111965
申请日：2020-12-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Minsu Seol , Hyeonjin Shin
IPC: H01L29/10 , H01L29/36 , H01L29/423
Abstract: A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.
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公开(公告)号：US11329223B2
公开(公告)日：2022-05-10
申请号：US17060884
申请日：2020-10-01
Inventor： Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Kibum Kim , Sanghun Lee , Yunho Kang
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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公开(公告)号：US11158849B2
公开(公告)日：2021-10-26
申请号：US16015835
申请日：2018-06-22
Inventor： Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Ki-Bum Kim , Yunhho Kang , Sanghun Lee
IPC: H01M4/36 , H01M10/0525 , H01M4/133 , H01M4/587 , H01M4/38 , H01M10/0562 , H01M10/0585 , H01M10/0566 , H01M4/70 , H01M4/62 , H01M4/1393 , B82Y30/00 , H01M4/02 , H01M4/66
Abstract: Provided are lithium ion batteries including a nano-crystalline graphene electrode. The lithium ion battery includes a cathode on a cathode current collector, an electrolyte layer on the cathode, an anode on the electrolyte layer, and an anode current collector on the anode. The anode and the cathode include a plurality of grains having a size in a range from about 5 nm to about 100 nm. The cathode has a double bonded structure in which a carbon of the graphene is combined with oxygen.
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Patent Agency Ranking
公开(公告)号：US10910794B2
公开(公告)日：2021-02-02
申请号：US15962600
申请日：2018-04-25
Inventor： Jinseong Heo , Minhyun Lee , Seongjun Park , Philip Kim , Hongkun Park , Donhee Ham
Abstract: A light-emitting device includes a substrate including a photonic cavity and configured to function as a gate, an active layer including a two-dimensional material, a first conductive contact, and a second conductive contact. The wavelength range of light generated by the light-emitting device may be narrowed based on the photonic cavity being included in the substrate, and the intensity and wavelength range of the generated light may be controlled based on the substrate functioning as a gate.
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公开(公告)号：US10559660B2
公开(公告)日：2020-02-11
申请号：US16248945
申请日：2019-01-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Haeryong Kim , Hyeonjin Shin , Seunggeol Nam , Seongjun Park
IPC: H01L29/04 , H01L29/78 , H01L29/08 , H01L21/285 , H01L29/45 , H01L29/417 , H01L29/06 , H01L29/267 , H01L29/12 , H01L29/26 , H01L29/16 , H01L29/165
Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
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公开(公告)号：US10217819B2
公开(公告)日：2019-02-26
申请号：US15010807
申请日：2016-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Haeryong Kim , Hyeonjin Shin , Seunggeol Nam , Seongjun Park
IPC: H01L29/04 , H01L29/78 , H01L29/08 , H01L21/285 , H01L29/45 , H01L29/06 , H01L29/267 , H01L29/417 , H01L29/12 , H01L29/26 , H01L29/165 , H01L29/16
Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
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39.发明授权公开(公告)号：US12199129B2
公开(公告)日：2025-01-14
申请号：US17313464
申请日：2021-05-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Minsu Seol , Hyeonjin Shin
IPC: H01L27/146 , H04N23/11
Abstract: An image sensor includes a visible light sensor portion and an infrared sensor portion arranged on the visible light sensor portion. The visible light sensor portion includes a first sensor layer and a first signal wiring layer, wherein a plurality of visible light sensing elements are arrayed in the first sensor layer and the first signal wiring layer is configured to process a signal output from the first sensor layer. The infrared sensor portion includes a second sensor layer in which a plurality of infrared sensing elements are arrayed, and a second signal wiring layer configured to process a signal output from the second sensor layer. The infrared sensor portion and the visible light sensor portion form a single monolithic structure which is effective in obtaining high resolution.
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公开(公告)号：US12193235B2
公开(公告)日：2025-01-07
申请号：US17537984
申请日：2021-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngtek Oh , Hyeyoung Kwon , Taein Kim , Gukhyon Yon , Minhyun Lee
IPC: H10B43/27
Abstract: A nonvolatile memory device includes a channel layer, a plurality of gate electrodes and a plurality of separation layers spaced apart from the channel layer and alternately arranged, a charge trap layer between the gate electrodes in the channel layer, and a charge blocking layer between the charge trap layer and the gate electrode.
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