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    IMAGE SENSORS
    31.
    发明申请
    IMAGE SENSORS 有权

    公开(公告)号：US20210375965A1

    公开(公告)日：2021-12-02

    申请号：US17399282

    申请日：2021-08-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

    IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745

    Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

    Semiconductor package for reducing stress to redistribution via
    32.
    发明授权
    Semiconductor package for reducing stress to redistribution via 有权

    公开(公告)号：US10734342B2

    公开(公告)日：2020-08-04

    申请号：US15965590

    申请日：2018-04-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seok Hwan Kim ,  Han Kim ,  Kyung Ho Lee ,  Kyung Moon Jung

    IPC: H01L23/00 ,  H01L23/28 ,  H01L23/498 ,  H01L23/538 ,  H01L23/16 ,  H01L23/31

    Abstract: A semiconductor package includes: a connection member having a first surface and a second surface opposing each other in a stacking direction of the semiconductor package and including an insulating member and a redistribution layer formed on the insulating member and having a redistribution via; a semiconductor chip disposed on the first surface of the connection member and having connection pads connected to the redistribution layer; an encapsulant disposed on the first surface of the connection member and encapsulating the semiconductor chip; a passivation layer disposed on the second surface of the connection member; UBM pads disposed on the passivation layer and overlapping the redistribution vias in the stacking direction; and UBM vias connecting the UBM pads to the redistribution layer through the passivation layer, not overlapping the redistribution vias with respect to the stacking direction, and having a non-circular cross section.

    Image sensor and method for fabricating the same
    33.
    发明授权
    Image sensor and method for fabricating the same 有权

    公开(公告)号：US10373997B2

    公开(公告)日：2019-08-06

    申请号：US15666907

    申请日：2017-08-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Soo Choi ,  Kyung Ho Lee

    IPC: H01L27/146 ,  H01L31/062 ,  H01L31/113

    Abstract: An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.

    IMAGE SENSOR WITH REDUCED NOISE
    34.
    发明申请
    IMAGE SENSOR WITH REDUCED NOISE 审中-公开

    公开(公告)号：US20190222781A1

    公开(公告)日：2019-07-18

    申请号：US16115987

    申请日：2018-08-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JUNG WOOK LIM ,  Eun Sub Shim ,  Kyung Ho Lee

    IPC: H04N5/357 ,  H01L27/146

    CPC classification number: H04N5/357 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/378

    Abstract: An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.

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