中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.018 seconds)

    Image sensor and method of fabricating the same
    1.
    发明授权
    Image sensor and method of fabricating the same 有权

    公开(公告)号：US10923518B2

    公开(公告)日：2021-02-16

    申请号：US16014557

    申请日：2018-06-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hong Ki Kim ,  Jung Chak Ahn ,  In Sung Joe

    IPC: H01L27/146

    Abstract: An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate including photoelectric elements, a first color filter disposed on the substrate, a second color filter disposed on the substrate to be adjacent to the first color filter, a covering film disposed between sidewalls of the first and second color filters, and an air gap formed in the covering film.

    UNIT PIXEL OF IMAGE SENSOR AND PIXEL ARRAY INCLUDING THE UNIT PIXEL
    2.
    发明申请
    UNIT PIXEL OF IMAGE SENSOR AND PIXEL ARRAY INCLUDING THE UNIT PIXEL 有权
    图像传感器和像素阵列的单元像素包括单元像素

    公开(公告)号：US20130321685A1

    公开(公告)日：2013-12-05

    申请号：US13778763

    申请日：2013-02-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung Chak Ahn ,  Hisanori Ihara

    IPC: H04N5/374

    CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/37457

    Abstract: A unit pixel of an image sensor is provided. The unit pixel includes a photoelectric conversion element configured to generate photocharge varying with the intensity of incident light, a transfer transistor configured to transfer the photocharge to a floating diffusion in response to a transfer control signal, and a supplemental transistor connected to the floating diffusion. Because the unit pixel includes only one transistor in addition to the transfer transistor, the area of the unit pixel is minimized, and, as a result, the resolution of a pixel array is increased and the power consumption of the pixel array is decreased.

    Abstract translation: 提供图像传感器的单位像素。 单位像素包括被配置为产生随入射光强度变化的光电荷的光电转换元件，配置为响应于转印控制信号将光电荷转移到浮动扩散的转移晶体管和连接到浮动扩散的补充晶体管。 由于单位像素除了传输晶体管之外仅包括一个晶体管，所以单位像素的面积被最小化，结果，像素阵列的分辨率增加，并且像素阵列的功耗降低。

    Method of generating pixel array layout for image sensor and layout generating system using the method
    3.
    发明授权
    Method of generating pixel array layout for image sensor and layout generating system using the method 有权
    使用该方法生成图像传感器和布局生成系统的像素阵列布局的方法

    公开(公告)号：US09420209B2

    公开(公告)日：2016-08-16

    申请号：US14286040

    申请日：2014-05-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Chak Ahn ,  Hee Geun Jeong

    IPC: G06F17/50 ,  H04N5/3745 ,  H01L27/146

    CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464

    Abstract: A method of generating a pixel array layout for an image sensor (wherein the image sensor includes a plurality of unit pixels, and each of the plurality of unit pixels includes a plurality of transistors) includes forming each unit pixel to include a shallow trench isolation (STI). The STI is between a deep trench isolation (DTI) area and one of a p-well region and source and drain regions of each transistor. The p-well region is below a gate of each of the transistors, and the DTI area is filled with at least two materials.

    Abstract translation: 一种生成图像传感器的像素阵列布局的方法（其中图像传感器包括多个单位像素，并且多个单位像素中的每一个包括多个晶体管）包括形成每个单位像素以包括浅沟槽隔离（ STI）。 STI位于深沟槽隔离（DTI）区域和p阱区域之一以及每个晶体管的源极和漏极区域之间。 p阱区域在每个晶体管的栅极之下，并且DTI区域填充有至少两种材料。

    Image sensors and image processing devices including the same
    4.
    发明授权
    Image sensors and image processing devices including the same 有权

    公开(公告)号：US10128288B2

    公开(公告)日：2018-11-13

    申请号：US15229549

    申请日：2016-08-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Sun Oh ,  Jung Chak Ahn ,  Young Woo Jung

    IPC: H01L27/146

    Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.

    Image sensor
    5.
    发明授权
    Image sensor 有权

    公开(公告)号：US10096632B2

    公开(公告)日：2018-10-09

    申请号：US15425570

    申请日：2017-02-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Sun Oh ,  Yi Tae Kim ,  Jung Chak Ahn

    IPC: H01L27/14 ,  H01L27/146

    Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.

    Unit pixel of image sensor and pixel array including the unit pixel
    10.
    发明授权
    Unit pixel of image sensor and pixel array including the unit pixel 有权
    包含单位像素的图像传感器和像素阵列的单位像素

    公开(公告)号：US09025063B2

    公开(公告)日：2015-05-05

    申请号：US13778763

    申请日：2013-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Chak Ahn ,  Hisanori Ihara

    IPC: H04N3/14 ,  H04N5/335 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L21/00 ,  H04N5/374 ,  H04N5/3745

    CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/37457

    Abstract: A unit pixel of an image sensor is provided. The unit pixel includes a photoelectric conversion element configured to generate photocharge varying with the intensity of incident light, a transfer transistor configured to transfer the photocharge to a floating diffusion in response to a transfer control signal, and a supplemental transistor connected to the floating diffusion. Because the unit pixel includes only one transistor in addition to the transfer transistor, the area of the unit pixel is minimized, and, as a result, the resolution of a pixel array is increased and the power consumption of the pixel array is decreased.

    Abstract translation: 提供图像传感器的单位像素。 单位像素包括被配置为产生随入射光强度变化的光电荷的光电转换元件，配置为响应于转印控制信号将光电荷转移到浮动扩散的转移晶体管和连接到浮动扩散的补充晶体管。 由于单位像素除了传输晶体管之外仅包括一个晶体管，所以单位像素的面积被最小化，结果，像素阵列的分辨率增加，并且像素阵列的功耗降低。

Patent Agency Ranking