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    IMAGE SENSOR
    1.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230395635A1

    公开(公告)日：2023-12-07

    申请号：US18204783

    申请日：2023-06-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Min Han ,  Seung Joo Nah ,  Hee Geun Jeong

    IPC: H01L27/146 ,  H04N25/79

    CPC classification number: H01L27/14636 ,  H04N25/79 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

    Abstract: An image sensor includes a first substrate including a first surface and a second surface opposite to the first surface, a first wiring structure provided on the second surface of the first substrate, the first wiring structure including a first wiring and a first inter-wiring insulating film, a second substrate including a third surface facing the second surface of the first substrate, and a fourth surface opposite to the third surface, a second wiring structure provided on the third surface of the second substrate, the second wiring structure including a second wiring and a second inter-wiring insulating film, a via trench penetrating the first substrate and the first wiring structure, a through via structure extending along the via trench and connected to the second wiring, and a pad pattern provided on the through via.

    Pixel for CMOS image sensor and image sensor including the same
    2.
    发明授权
    Pixel for CMOS image sensor and image sensor including the same 有权

    公开(公告)号：US10096637B2

    公开(公告)日：2018-10-09

    申请号：US15447345

    申请日：2017-03-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Woo Chung ,  Tae Hun Lee ,  Hee Geun Jeong

    IPC: H01L27/146 ,  H01L21/764 ,  H01L21/762 ,  H01L21/763 ,  H01L29/06 ,  H01L31/18

    Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.

    Method of generating pixel array layout for image sensor and layout generating system using the method
    3.
    发明授权
    Method of generating pixel array layout for image sensor and layout generating system using the method 有权
    使用该方法生成图像传感器和布局生成系统的像素阵列布局的方法

    公开(公告)号：US09420209B2

    公开(公告)日：2016-08-16

    申请号：US14286040

    申请日：2014-05-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Chak Ahn ,  Hee Geun Jeong

    IPC: G06F17/50 ,  H04N5/3745 ,  H01L27/146

    CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464

    Abstract: A method of generating a pixel array layout for an image sensor (wherein the image sensor includes a plurality of unit pixels, and each of the plurality of unit pixels includes a plurality of transistors) includes forming each unit pixel to include a shallow trench isolation (STI). The STI is between a deep trench isolation (DTI) area and one of a p-well region and source and drain regions of each transistor. The p-well region is below a gate of each of the transistors, and the DTI area is filled with at least two materials.

    Abstract translation: 一种生成图像传感器的像素阵列布局的方法（其中图像传感器包括多个单位像素，并且多个单位像素中的每一个包括多个晶体管）包括形成每个单位像素以包括浅沟槽隔离（ STI）。 STI位于深沟槽隔离（DTI）区域和p阱区域之一以及每个晶体管的源极和漏极区域之间。 p阱区域在每个晶体管的栅极之下，并且DTI区域填充有至少两种材料。

    Image sensor and a method of fabricating the same
    6.
    发明授权
    Image sensor and a method of fabricating the same 有权

    公开(公告)号：US11929381B2

    公开(公告)日：2024-03-12

    申请号：US17138112

    申请日：2020-12-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Han Seok Kim ,  Byung Jun Park ,  Jin Ju Jeon ,  Hee Geun Jeong

    IPC: H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

    Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

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