公开(公告)号：US5856071A

公开(公告)日：1999-01-05

申请号：US618274

申请日：1996-03-18

申请人： Akiko Kotachi ,  Satoshi Takechi

发明人： Akiko Kotachi ,  Satoshi Takechi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/095 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  G03F7/42 ,  H01L21/027 ,  G03C5/16 ,  G03C1/73

CPC分类号： G03F7/095 ,  G03F7/0758 ,  G03F7/094 ,  G03F7/0045 ,  Y10S430/111

摘要： A fine pattern is formed using a resist material including a copolymer of a silicon-containing acrylate and an acrylate which contains a group that is eliminated by an acid, and a photo-acid generator which generates the acid upon irradiation. The polarity of the material changes after elimination of this group and becomes soluble in an aqueous alkali solution.

摘要翻译： 使用包含含硅丙烯酸酯和含有被酸除去的基团的丙烯酸酯的共聚物的抗蚀剂材料和在照射时产生酸的光酸发生剂形成精细图案。 在该组消除后，材料的极性发生变化，并溶于碱性水溶液中。

公开(公告)号：US5326670A

公开(公告)日：1994-07-05

申请号：US711779

申请日：1991-06-07

申请人： Akiko Kotachi ,  Satoshi Takechi

发明人： Akiko Kotachi ,  Satoshi Takechi

IPC分类号： G03F7/008 ,  G03F7/012 ,  G03F7/075 ,  G03F7/16 ,  G03F7/30

CPC分类号： G03F7/0758 ,  G03F7/0125 ,  G03F7/168 ,  Y10S430/143

摘要： A resist composition for forming a upper resist layer and a process for forming a pattern thereby are disclosed. This resist comprises an azide compound and a polyacrylic copolymer of the following formula (1): ##STR1## wherein, R.sub.1 means CH.sub.3, CF.sub.3, CN, CH.sub.2 OH, or CH.sub.2 CO.sub.2 R, wherein R means an alkyl having 1 to 5 carbon atomsR.sub.2 means a hydrocarbon radical having at least one Si,R.sub.3 means OH, O--C(CH.sub.3).sub.3, NH.sub.2 , or NHCH.sub.2 OH, and, a ratio of n to m is more than 0 and is 1 or less than 1.Whereby a finely-resolved resist pattern is obtained by a preset process for forming the resist pattern.

摘要翻译： 公开了用于形成上抗蚀剂层的抗蚀剂组合物和由此形成图案的工艺。 该抗蚀剂包含叠氮化合物和下式（1）的聚丙烯酸共聚物：其中R 1表示CH 3，CF 3，CN，CH 2 OH或CH 2 CO 2 R，其中R表示具有1至5个碳原子的烷基 R 2表示具有至少一个Si的烃基，R 3表示OH，OC（CH 3）3，NH 2或NHCH 2 OH，n与m的比例大于0且为1或小于1。 通过用于形成抗蚀剂图案的预设处理获得分辨的抗蚀剂图案。

公开(公告)号：US5087551A

公开(公告)日：1992-02-11

申请号：US487089

申请日：1990-03-02

申请人： Yuko Nakamura ,  Satoshi Takechi

发明人： Yuko Nakamura ,  Satoshi Takechi

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/311 ,  H01L21/312

CPC分类号： H01L21/31144 ,  G03F7/0048 ,  G03F7/039 ,  H01L21/312

摘要： A process for the preparation of a semiconductor device and a pattern-forming coating solution used for this process are disclosed. In this process, a coating solution formed by dissolving an .alpha.-methylstyrene/methyl .alpha.-chloroacrylate copolymer as a specific positive resist material in a specific solvent is coated on a layer to be etched, which is formed on a semiconductor substrate. In this process, penetration between the substrate and the resist of the resist into the clayer to be etched, and a formation of cracks in the resist after the etching, are prevented.

摘要翻译： 公开了一种制备用于该方法的半导体器件和图案形成涂层溶液的方法。 在该方法中，将通过将α-甲基苯乙烯/α-丙烯酸甲酯α-甲基丙烯酸甲酯共​​聚物作为特定正性抗蚀剂材料溶解在特定溶剂中形成的涂布溶液涂覆在形成于半导体基板上的被蚀刻层上。 在此过程中，防止了将基板和抗蚀剂的抗蚀剂渗入待蚀刻的层中，并且防止蚀刻后在抗蚀剂中形成裂纹。

公开(公告)号：US5068169A

公开(公告)日：1991-11-26

申请号：US426755

申请日：1989-10-26

申请人： Satoshi Takechi ,  Yuko Nakamura ,  Yukari Mihara

发明人： Satoshi Takechi ,  Yuko Nakamura ,  Yukari Mihara

IPC分类号： G03F7/039 ,  G03F7/075 ,  G03F7/26 ,  G03F7/36 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

CPC分类号： G03F7/0758 ,  Y10S438/949

摘要： Disclosed is a process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, irradiating the resist film with radiations and patterning the irradiated resist film by oxygen reactive ion etching, ECR etching or reactive ion beam etching. This process is advantageously used for preparing a semiconductor device by the two-layer resist method.