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    DISPLAY DEVICE
    31.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20190172847A1

    公开(公告)日：2019-06-06

    申请号：US16260573

    申请日：2019-01-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368

    Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

    DISPLAY DEVICE
    36.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20150311235A1

    公开(公告)日：2015-10-29

    申请号：US14795602

    申请日：2015-07-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/127 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/24 ,  H01L29/7869

    Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

    Abstract translation: 需要包括具有适当结构和占用面积小的氧化物半导体，保护电路等的显示装置。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 在所述栅极绝缘层上方并与所述栅电极重叠的第一氧化物半导体层; 以及通过层叠导电层和第二氧化物半导体层而形成的第一布线层和第二布线层，并且其端部在第一氧化物半导体层上方并与栅电极重叠。 非线性元件的栅电极连接到扫描线或信号线，非线性元件的第一布线层或第二布线层直接连接到栅极电极层，以施加电位 栅电极。

    DISPLAY DEVICE
    37.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20150236054A1

    公开(公告)日：2015-08-20

    申请号：US14700562

    申请日：2015-04-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: H01L27/12 ,  H01L29/786

    Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

    Abstract translation: 保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层 其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。 在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。 因此，可以降低结漏电，提高非线性元件的特性。

    DISPLAY DEVICE
    39.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20130134417A1

    公开(公告)日：2013-05-30

    申请号：US13731649

    申请日：2012-12-31

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: H01L29/20

    CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/127 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/24 ,  H01L29/7869

    Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

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