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    Electrostatic chuck having a unidirectionally conducting coupler layer
    34.
    发明授权
    Electrostatic chuck having a unidirectionally conducting coupler layer 失效
    静电卡盘具有单向导电的耦合器层

    公开(公告)号：US5801915A

    公开(公告)日：1998-09-01

    申请号：US829711

    申请日：1997-03-28

    申请人： Arnold Kholodenko ,  Alexander M. Veytser ,  Shamouil Shamouilian

    发明人： Arnold Kholodenko ,  Alexander M. Veytser ,  Shamouil Shamouilian

    IPC分类号： B23Q3/15 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

    CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

    摘要： An electrostatic chuck (20) for holding a substrate (45) in a process chamber (80) having a voltage supply terminal (65) for charging the chuck (20). The chuck includes an electrostatic member (25) comprising at least one electrode (30), an electrically insulated holding surface (40) for holding a substrate (45) thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler layer (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) bonded to the contact surface (55) of the electrode, and a terminal surface (60) for electrically contacting the voltage supply terminal (65), is used to electrically couple the unidirectionally conducting coupler layer (70) to the voltage supply terminal (65).

    摘要翻译： 一种用于将衬底（45）保持在具有用于对卡盘（20）充电的电压供应端子（65）的处理室（80）中的静电吸盘（20）。 卡盘包括一个包括至少一个电极（30）的静电部件（25），用于在其上保持基板（45）的电绝缘保持表面（40）和用于向电极提供电荷的电接触表面（48）。 单向导电耦合器层（70）将静电部件的接触表面（48）电耦合到电压供应端子，以基本上仅在从端子到接触表面的单个方向上进行充电。 优选地，具有接合到电极的接触表面（55）的接合面（55）的电连接器（50）和用于电接触电压端子（65）的端子表面（60）用于电耦合 所述单向导电耦合器层（70）连接到所述电压源端子（65）。

    Multi-electrode electrostatic chuck
    35.
    发明授权
    Multi-electrode electrostatic chuck 失效
    多电极静电卡盘

    公开(公告)号：US5646814A

    公开(公告)日：1997-07-08

    申请号：US276010

    申请日：1994-07-15

    申请人： Shamouil Shamouilian ,  Samuel Broydo ,  Manoocher Birang

    发明人： Shamouil Shamouilian ,  Samuel Broydo ,  Manoocher Birang

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6875 ,  H01L21/6831 ,  H01L21/6833

    摘要： A multi-electrode electrostatic chuck (20) for holding a substrate (42) such as a silicon wafer during processing is described. The electrostatic chuck (20) comprises (i) a first electrode (22), (ii) a second electrode (24), and (iii) an insulator (26) having a lower portion (26a), a middle portion (26b) and an upper portion (26c). The lower portion (26a) of the insulator (26) is below the first electrode (22) and has a bottom surface (28) suitable for resting the chuck (20) on a support (44) in a process chamber (41). The middle portion (26b) of the insulator (26) lies between the first and second electrodes (22), (24). The upper portion (26c) of the insulator (26) is on the second electrode (24), and has a top surface (30) suitable for holding a substrate (42). The first and second electrodes (22, 24) can have a unipolar or bipolar configurations. In operation, the chuck (20) is placed on a support (44) in a process chamber (41) so that the bottom surface (28) of the chuck (20) rests on the support (44). A substrate (42) is placed on the top surface (30) of the chuck (20). When the first electrode (22) of the chuck (20) is electrically biased with respect to the support (44), a first electrostatic force holds the chuck (20) onto the support (44). When the second electrode (24) of the chuck (20) is electrically biased with respect to the substrate (42) placed on the chuck (20), a second electrostatic force holds the substrate (42) to the chuck (20).

    摘要翻译： 描述了用于在处理期间保持硅晶片等基板（42）的多电极静电卡盘（20）。 静电卡盘（20）包括（i）第一电极（22），（ii）第二电极（24）和（iii）具有下部分（26a）的绝缘体（26），中间部分（26b） 和上部（26c）。 绝缘体（26）的下部（26a）位于第一电极（22）的下面，并且具有适于将卡盘（20）放置在处理室（41）中的支撑件（44）上的底表面（28）。 绝缘体（26）的中间部分（26b）位于第一和第二电极（22），（24）之间。 绝缘体（26）的上部（26c）在第二电极（24）上，并且具有适于保持基板（42）的顶表面（30）。 第一和第二电极（22,24）可以具有单极或双极结构。 在操作中，卡盘（20）被放置在处理室（41）中的支撑件（44）上，使得卡盘（20）的底表面（28）搁置在支撑件（44）上。 基板（42）被放置在卡盘（20）的顶表面（30）上。 当卡盘（20）的第一电极（22）相对于支撑件（44）被电偏置时，第一静电力将卡盘（20）保持在支撑件（44）上。 当卡盘（20）的第二电极（24）相对于放置在卡盘（20）上的基板（42）电气偏置时，第二静电力将基板（42）保持在卡盘（20）上。

    Electrostatic chuck for magnetic flux processing
    36.
    发明授权
    Electrostatic chuck for magnetic flux processing 失效
    静磁卡盘用于磁通加工

    公开(公告)号：US5592358A

    公开(公告)日：1997-01-07

    申请号：US276841

    申请日：1994-07-18

    申请人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

    发明人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

    IPC分类号： H02N13/00 ,  H01L21/683

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T29/49117

    摘要： An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

    摘要翻译： 用于将基板42保持在包含磁通43的处理室40中的静电卡盘20包括具有适于在其上支撑基板42的上表面的基座22。 其中具有电极24的绝缘体26位于基座22上。包括铁磁材料的磁分路器34（i）位于基座22上，或（ii）在绝缘体26中，或（iii）直接在下方， 并且与基座22相邻。

    Chemical-mechanical polishing pad providing polishing unformity
    37.
    发明授权
    Chemical-mechanical polishing pad providing polishing unformity 失效
    化学机械抛光垫提供抛光不整合

    公开(公告)号：US5533923A

    公开(公告)日：1996-07-09

    申请号：US419573

    申请日：1995-04-10

    申请人： Shamouil Shamouilian ,  Daniel O. Clark

    发明人： Shamouil Shamouilian ,  Daniel O. Clark

    IPC分类号： B24B37/26 ,  B24B1/00 ,  B23D11/00

    CPC分类号： B24B37/26

    摘要： In accordance with the present invention, a polishing pad useful for polishing a semiconductor-comprising substrate is disclosed. The polishing pad is constructed to include conduits which pass through at least a portion of and preferably through the entire thickness of the polishing pad. The conduits, preferably tubulars, are constructed from a first material which is different from a second material used as a support matrix. The conduits are positioned within the support matrix such that the longitudinal centerline of the conduit forms an angle ranging from about 60.degree. to about 120.degree. with the working surface of the polishing pad. In the most preferred embodiment of the present invention, the conduits pass all the way through the thickness of the polishing pad and are sized to permit the flow of polishing slurry, reactive etchant material, heat transfer medium, and/or lubricant from a supply device through the conduits to the working surface of the polishing pad (at least a portion of which is in contact or near contact with the article to be polished).

    摘要翻译： 根据本发明，公开了一种用于抛光含半导体衬底的抛光垫。 抛光垫被构造成包括穿过抛光垫的至少一部分并且优选穿过抛光垫的整个厚度的导管。 导管（优选管状）由与用作支撑基体的第二材料不同的第一材料构成。 导管定位在支撑基体内，使得导管的纵向中心线与抛光垫的工作表面形成约60°至约120°的角度。 在本发明的最优选实施例中，导管一直通过抛光垫的厚度，其尺寸设计成允许来自供给装置的抛光浆料，反应性蚀刻剂材料，传热介质和/或润滑剂的流动 通过导管移动到抛光垫的工作表面（其至少一部分与待抛光的物品接触或接近接触）。

    Abatement of fluorine gas from effluent
    38.
    发明申请
    Abatement of fluorine gas from effluent 审中-公开
    从排出物中减少氟气

    公开(公告)号：US20070022958A1

    公开(公告)日：2007-02-01

    申请号：US11410882

    申请日：2006-04-24

    申请人： Shamouil Shamouilian ,  Mehran Moalem ,  Tony Kaushal

    发明人： Shamouil Shamouilian ,  Mehran Moalem ,  Tony Kaushal

    IPC分类号： C23C14/00 ,  C23C16/00

    CPC分类号： C23C16/4412 ,  B01D53/75 ,  B01D53/8659 ,  B01D53/8662

    摘要： An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process, includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.

    摘要翻译： 可用于消除从处理室35排出的流出物（例如来自CVD室清洁过程）的二氧化碳气体含量的流出物排放系统200包括催化反应器250以减少含量 在流出物100中的F 2 H 2。 该系统可以进一步包括预浸料230以在催化反应器250中处理之前向流出物100中添加反应性气体和/或处理流出物100。 或者，可以通过气体源220向流出物100中加入反应性气体。

    Multi-core transformer plasma source
    39.
    发明授权
    Multi-core transformer plasma source 失效
    多核变压器等离子体源

    公开(公告)号：US06755150B2

    公开(公告)日：2004-06-29

    申请号：US09839360

    申请日：2001-04-20

    申请人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

    发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

    IPC分类号： C23C1600

    CPC分类号： H01J37/32431

    摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

    摘要翻译： 使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。 在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。 在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。 所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

    Ceramic substrate support
    40.
    发明授权
    Ceramic substrate support 有权
    陶瓷基板支撑

    公开(公告)号：US06730175B2

    公开(公告)日：2004-05-04

    申请号：US10055634

    申请日：2002-01-22

    申请人： Joseph Yudovsky ,  Salvador P. Umotoy ,  Shamouil Shamouilian ,  Ron Rose ,  Rita Dukes ,  Xiaoxiong Yuan

    发明人： Joseph Yudovsky ,  Salvador P. Umotoy ,  Shamouil Shamouilian ,  Ron Rose ,  Rita Dukes ,  Xiaoxiong Yuan

    IPC分类号： H01L2100

    CPC分类号： C23C16/45521 ,  C23C16/4581 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/67092

    摘要： A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a ceramic body having an embedded heating element and a base plate. The base plate and the ceramic body define a channel therebetween adapted to supply purge gas to a perimeter of a substrate disposed on the support assembly. The base plate is fastened to the body by brazing, adhering, fastening, press fitting or by mating engaging portions of a retention device such as a bayonet fitting.

    摘要翻译： 提供了一种用于在处理期间支撑基板的基板支撑组件。 在一个实施例中，支撑组件包括具有嵌入式加热元件和基板的陶瓷体。 基板和陶瓷体在它们之间限定了一个通道，用于将净化气体供应到设置在支撑组件上的基板的周边。 基板通过钎焊，粘合，紧固，压配合或通过配合诸如卡口配件的保持装置的接合部分而紧固到主体。