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17 条记录 (耗时 0.028 秒)

    Electroless plating system
    4.
    发明授权
    Electroless plating system 有权
    无电镀系统

    公开(公告)号：US06824612B2

    公开(公告)日：2004-11-30

    申请号：US10036321

    申请日：2001-12-26

    申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok ,  Girish Dixit

    发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok ,  Girish Dixit

    IPC分类号： B05C502

    CPC分类号： H01L21/67167 ,  C23C18/1632 ,  C23C18/1692 ,  H01L21/6723

    摘要： A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.

    摘要翻译： 一种用于电镀基板的方法和装置，其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。 提供与中心基板传送外壳连通的基板激活室，并且可由至少一个基板传送机器人访问。 提供与中心基板传送外壳连通的基板电镀室，并且可由至少一个基板传送机器人访问。 提供与中央基板传送外壳连通的基板旋转漂洗干燥室，并且可由至少一个基板传送机器人访问，并且提供与中央基板传送外壳连通的退火室，并且可由至少一个 基板传送机器人。 还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。

    Dual post centrifugal wafer clip for spin rinse dry unit
    5.
    发明授权
    Dual post centrifugal wafer clip for spin rinse dry unit 失效
    双柱离心晶片夹，用于旋转冲洗干燥单元

    公开(公告)号：US06612014B1

    公开(公告)日：2003-09-02

    申请号：US09616308

    申请日：2000-07-12

    申请人： Bernardo Donoso ,  Joseph J. Stevens ,  Donald J. Olgado ,  Alexander Sou-Kang Ko

    发明人： Bernardo Donoso ,  Joseph J. Stevens ,  Donald J. Olgado ,  Alexander Sou-Kang Ko

    IPC分类号： B23Q700

    CPC分类号： H01L21/68728 ,  H01L21/67034 ,  Y10T29/49998

    摘要： An apparatus and associated method for securing a wafer to a SRD spider, the SRD spider has a plurality of spider arms. The apparatus includes a plurality of spaced surfaces disposed on a distal end of one of the spider arms, each of the surfaces being spaced perpendicularly from the longitudinal axis of the spider arm. In one aspect, the two surfaces are positioned to limit production of a wedging force between that spaced surface and the wafer. In one embodiment, a post at least partially defines each one of the plurality of spaced surfaces.

    摘要翻译： 一种用于将晶片固定到SRD蜘蛛的装置和相关方法，SRD蜘蛛具有多个蜘蛛臂。 该装置包括设置在一个蜘蛛臂的远端上的多个间隔表面，每个表面与该蜘蛛臂的纵向轴线垂直地间隔开。 在一个方面，两个表面被定位成限制在该间隔表面和晶片之间的楔入力的产生。 在一个实施例中，柱至少部分地限定多个间隔开的表面中的每一个。

    Self positioning vacuum chuck
    6.
    发明授权
    Self positioning vacuum chuck 失效
    自动定位真空吸盘

    公开(公告)号：US06517130B1

    公开(公告)日：2003-02-11

    申请号：US09524977

    申请日：2000-03-14

    申请人： Bernardo Donoso ,  Joseph J. Stevens ,  Donald J. Olgado ,  Mark Denome

    发明人： Bernardo Donoso ,  Joseph J. Stevens ,  Donald J. Olgado ,  Mark Denome

    IPC分类号： B66C102

    CPC分类号： H01L21/68707 ,  B25J15/0616 ,  H01L21/6838 ,  Y10S414/141

    摘要： In one aspect, a vacuum chuck supports a substrate on an end effector, the vacuum chuck comprising a position reference structure and a suction cup. The position reference structure is mounted to the surface and comprises a reference surface. The suction cup is located proximate the reference surface and comprising a suction mount. In another aspect, a method of chucking a substrate to a vacuum chuck is provided. The vacuum chuck comprises a suction cup and a position reference structure. The method comprises attaching the suction cup to the substrate to form a seal therebetween. The suction cup is deformed such that the substrate contacts the position reference structure. The substrate is then leveled on the position reference structure.

    摘要翻译： 在一个方面，真空吸盘支撑末端执行器上的基板，真空卡盘包括位置参考结构和吸盘。 位置参考结构安装到表面并且包括参考表面。 吸盘位于参考表面附近并且包括抽吸座。 另一方面，提供了将基板夹持到真空吸盘的方法。 真空吸盘包括吸盘和位置参考结构。 该方法包括将吸盘连接到基底以在其间形成密封。 吸盘变形使得基板接触位置参考结构。 然后将基板平整在位置参考结构上。

    Polymetal hydroxychloride processes and compositions: enhanced efficacy antiperspirant salt compositions
    7.
    发明授权
    Polymetal hydroxychloride processes and compositions: enhanced efficacy antiperspirant salt compositions 有权
    多金属羟氯化物方法和组合物：增强功效止汗剂盐组合物

    公开(公告)号：US08801909B2

    公开(公告)日：2014-08-12

    申请号：US11619478

    申请日：2007-01-03

    申请人： William E. Pratt ,  Joseph J. Stevens ,  Peter G. Symons

    发明人： William E. Pratt ,  Joseph J. Stevens ,  Peter G. Symons

    IPC分类号： B01D61/46

    CPC分类号： C01F7/56 ,  A61K8/26 ,  A61K8/28 ,  A61K8/44 ,  A61Q15/00 ,  B01D61/44 ,  C01B7/035 ,  C01G25/006 ,  C01P2002/87

    摘要： The invention describes processes for the production of basic aluminum compounds, including aluminum chlorohydrate, basic zirconium compounds, and basic aluminum zirconium compounds. The process produces products of a wide range of basicities. The products formed by the present invention are comprised of low molecular weight species characteristic of enhanced efficacy antiperspirant salt compositions. The products of this process are suitable for use as water purification agents, as binders in catalyst applications, and in antiperspirant applications. In addition, the invention is directed to the products made by the disclosed process.

    摘要翻译： 本发明描述了生产碱性铝化合物的方法，包括氯化铝水合物，碱性锆化合物和碱性锆锆化合物。 该过程产生广泛基础的产品。 由本发明形成的产品由具有增强的功效止汗剂盐组合物特征的低分子量物质组成。 该方法的产品适用于作为水净化剂，作为催化剂应用中的粘合剂和止汗剂应用。 此外，本发明涉及通过公开的方法制造的产品。

    Apparatus and method for rinsing substrates
    8.
    发明授权
    Apparatus and method for rinsing substrates 失效
    用于漂洗底物的装置和方法

    公开(公告)号：US06742279B2

    公开(公告)日：2004-06-01

    申请号：US10052015

    申请日：2002-01-16

    申请人： Dmitry Lubomirsky ,  Joseph J. Stevens

    发明人： Dmitry Lubomirsky ,  Joseph J. Stevens

    IPC分类号： F26B508

    CPC分类号： H01L21/67028 ,  Y10S134/902

    摘要： Embodiments of the invention provide a spin rinse dry (SRD) chamber for a semiconductor processing system. The SRD chamber includes a selectively rotatable substrate support member having an upper substrate receiving surface formed thereon, and a selectively rotatable shield member positioned above the upper substrate receiving surface, the rotatable shield member having a substantially planar lower surface that may be selectively positioned proximate the upper substrate. Embodiments of the invention further provide a method for rinsing semiconductor substrates, including the steps of positioning the substrate on a substrate support member, positioning a shield member having a substantially planar lower surface in a processing position above the substrate such that the substantially planar lower surface is in parallel orientation with an upper surface of the substrate, and flowing a fluid solution into a processing region defined by the upper surface of the substrate and the substantially planar lower surface via a fluid aperture in the substantially planar lower surface.

    摘要翻译： 本发明的实施例提供了一种用于半导体处理系统的旋转冲洗干燥（SRD）室。 SRD室包括一个有选择地旋转的基板支撑件，其具有形成在其上的上基板接收表面，以及位于上基板接收表面上方的可选择地旋转的屏蔽件，该可旋转屏蔽件具有基本平坦的下表面， 上基板。 本发明的实施例还提供了一种用于冲洗半导体衬底的方法，包括以下步骤：将衬底定位在衬底支撑构件上，将具有基本平坦的下表面的屏蔽构件定位在衬底上方的处理位置，使得基本平坦的下表面 与基底的上表面平行取向，并且使流体溶液经由基本平坦的下表面中的流体孔流动到由基底的上表面和基本上平坦的下表面限定的处理区域中。

    Electroless deposition apparatus
    9.
    发明授权
    Electroless deposition apparatus 有权

    公开(公告)号：US07138014B2

    公开(公告)日：2006-11-21

    申请号：US10059572

    申请日：2002-01-28

    申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

    发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

    IPC分类号： C23C14/00 ,  B05C11/00 ,  B05C3/00

    CPC分类号： H01L21/67126 ,  C23C18/1607 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1678 ,  C25D7/123 ,  C25D17/001

    摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

    Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection
    10.
    发明授权
    Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection 失效
    通过非接触式去镀层和端点检测来控制半导体晶片上的金属层的平面化

    公开(公告)号：US06720263B2

    公开(公告)日：2004-04-13

    申请号：US09981505

    申请日：2001-10-16

    申请人： Donald J. K. Olgado ,  Joseph J. Stevens ,  Alexander Lerner

    发明人： Donald J. K. Olgado ,  Joseph J. Stevens ,  Alexander Lerner

    IPC分类号： H01L21302

    CPC分类号： H01L21/32115 ,  C25F7/00 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/7684

    摘要： A non-contact apparatus and method for removing a metal layer from a substrate are provided. The apparatus includes a rotatable anode substrate support member configured to support a substrate in a face-up position and to electrically contact the substrate positioned thereon. A pivotally mounted cathode fluid dispensing nozzle assembly positioned above the anode substrate support member is also provided. A power supply in electrical communication with the anode substrate support member and the cathode fluid dispensing nozzle is provided, and a system controller configured to regulate at least one of a rate of rotation of the anode substrate support member, a radial position of the cathode fluid dispensing nozzle, and an output power of the power supply is provided. The method provides for the removal of a metal layer from a substrate by rotating the substrate in a face up position on a rotatable substrate support member. A cathode fluid dispensing nozzle is positioned over a central portion of the substrate and a metal removing solution is dispensed from the cathode fluid dispensing nozzle onto the central portion of the substrate. An electrical bias is applied between the substrate and the cathode fluid dispensing nozzle, which operates to deplate the metal layer below the fluid dispensing nozzle.

    摘要翻译： 提供了一种用于从基板去除金属层的非接触式设备和方法。 该装置包括可旋转的阳极基板支撑构件，其构造成将基板支撑在面朝上的位置并且电接触定位在其上的基板。 还提供了一种位于阳极基板支撑构件上方的枢转安装的阴极流体分配喷嘴组件。 提供与阳极基板支撑构件和阴极流体分配喷嘴电连通的电源，以及系统控制器，被配置为调节阳极基板支撑构件的旋转速率，阴极流体的径向位置 分配喷嘴，并且提供电源的输出功率。 该方法通过在可旋转的基板支撑构件上面向上的位置旋转基板来提供从基板移除金属层。 阴极流体分配喷嘴位于衬底的中心部分上方，金属去除溶液从阴极流体分配喷嘴分配到衬底的中心部分上。 在衬底和阴极流体分配喷嘴之间施加电偏压，其用于使流体分配喷嘴下方的金属层脱落。