公开(公告)号：US07238973B2

公开(公告)日：2007-07-03

申请号：US10540261

申请日：2004-12-14

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L29/165 ,  H01L29/786

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US4933789A

公开(公告)日：1990-06-12

申请号：US239616

申请日：1988-09-01

申请人： Hajime Ikeda

发明人： Hajime Ikeda

IPC分类号： G11B15/17 ,  G11B15/665 ,  G11B15/675

CPC分类号： G11B15/6656 ,  G11B15/17 ,  G11B15/67584

摘要： A cassette type magnetic recording/reproducing apparatus, such as a tape recorder, is disclosed, in which a magnetic tape accommodated in a tape cassette attached at a tape cassette attachment position within the main body of the apparatus is extracted by a loading mechanism so as to be loaded onto a predetermined tape running passage in the apparatus. According to the invention, the loading operation of the magnetic tape by the loading mechanism is enabled on the condition that it is sensed that a cassette holder for attaching the tape cassette at the tape cassette attachment position is locked at the tape cassette attachment position and that the tape cassette is attached at the tape cassette attachment position, in such a manner that a positive tape loading operation is assured and the magnetic tape as well as various operating units within the main body of the apparatus are protected from damage.

公开(公告)号：US4866616A

公开(公告)日：1989-09-12

申请号：US168255

申请日：1988-03-15

申请人： Kunihiko Takeuchi ,  Hajime Ikeda ,  Shinichi Horinouchi

发明人： Kunihiko Takeuchi ,  Hajime Ikeda ,  Shinichi Horinouchi

IPC分类号： G07C5/00 ,  G06F17/40 ,  G07C5/08 ,  G08G1/00 ,  G08G1/09

CPC分类号： G07C5/0858 ,  G07C5/085

摘要： Vehicle information such as vehicle speed, engine rotational speed when a vehicle runs are collected and converted into numerical data every constant period of time and these numerical data are written and recorded into a memory module. The memory module has therein a non-volatile memory and is detachably provided to a write unit attached to the vehicle. The data writing and power supply to the memory module from the write unit are executed by the contactless coupling using induction coils.

摘要翻译： 车辆行驶时的车辆速度，发动机转速等车辆信息被收集，并且在每个恒定时间段被转换为数值数据，并将这些数值数据写入并记录到存储器模块中。 存储器模块在其中具有非易失性存储器，并且可拆卸地设置到附接到车辆的写入单元。 通过使用感应线圈的非接触耦合来执行从写入单元到存储器模块的数据写入和电源供应。

公开(公告)号：US08643932B2

公开(公告)日：2014-02-04

申请号：US12170544

申请日：2008-07-10

申请人： Hajime Ikeda

发明人： Hajime Ikeda

IPC分类号： G02F1/153 ,  G09G3/19

CPC分类号： G09G3/38 ,  G02F1/0121 ,  G02F1/19 ,  G02F2203/34 ,  G09G2300/06 ,  G09G2300/08 ,  G09G2300/0809

摘要： A reflection type display apparatus includes an image display having a plurality of pixels, with each of the pixels including a first electrode having a light transmitting property, a second electrode disposed in opposition to the first electrode, and a third electrode disposed in opposition to the first or second electrode. An electrolytic solution containing a metal ion is disposed in contact with the first, second and third electrodes, and a control unit sets a direction of a current flowing between the first, second and third electrodes. The control unit sets a first state of forming a first electroplating of a first color on the first electrode using the first electrode as a negative electrode and using the second electrode as a positive electrode, a second state of forming a second electroplating of a second color on the second electrode using the second electrode as the negative electrode and using the first electrode as the positive electrode without forming the first electroplating, and a third state of forming a third electroplating of a third color on the third electrode using the third electrode as the negative electrode and using the first and second electrodes as the positive electrodes without forming the first and second electroplatings.

摘要翻译： 反射型显示装置包括具有多个像素的图像显示器，每个像素包括具有透光性的第一电极，与第一电极相对设置的第二电极和与第一电极相对设置的第三电极 第一或第二电极。 含有金属离子的电解液被设置成与第一，第二和第三电极接触，并且控制单元设定在第一，第二和第三电极之间流动的电流的方向。 控制单元使用第一电极作为负极设置在第一电极上形成第一颜色的第一电镀的第一状态，并且使用第二电极作为正电极，形成第二颜色的第二电镀的第二状态 在第二电极上使用第二电极作为负电极，并且使用第一电极作为正电极而不形成第一电镀;以及第三状态，使用第三电极作为第三电极在第三电极上形成第三颜色的第三电镀 并且使用第一和第二电极作为正电极而不形成第一和第二电镀。

公开(公告)号：US08242052B2

公开(公告)日：2012-08-14

申请号：US12562957

申请日：2009-09-18

申请人： Hajime Ikeda ,  Atsushi Iwata

发明人： Hajime Ikeda ,  Atsushi Iwata

IPC分类号： A01N25/26

CPC分类号： A01N43/78 ,  A01N43/54 ,  A01N43/653 ,  A01N43/84 ,  A01N51/00 ,  A01N33/22 ,  A01N2300/00

摘要： A method for controlling noxious organisms in a field of soybean or corn, comprising the steps of: treating soybean or corn seeds with at least one neonicotinoid compound selected from the group consisting of clothianidin, thiamethoxam, imidacloprid, dinotefuran, nitenpyram, acetamiprid, and thiacloprid, and treating the field with at least one PPO inhibitor compound selected from the group consisting of flumioxazin, sulfentrazone, saflufenacil, oxyfluorfen, and 3-(4-chloro-6-fluoro-2-trifluoromethylbenzimidazol-7-yl)-1-methyl-6-trifluoromethyl-2,4-(1H,3H)pyrimidinedione before or after the soybean or corn seeds treated with the neonicotinoid compound are sown in the field.

摘要翻译： 一种用于控制大豆或玉米领域的有害生物的方法，包括以下步骤：用至少一种新烟碱类化合物处理大豆或玉米种子，所述新烟碱类化合物选自噻虫胺，噻虫嗪，吡虫啉，二硝基呋喃，硝苯吡啶，啶虫脒和噻虫啉 ，并用至少一种选自氟马嗪，磺胺腙，香草氟苯，氟氟芬和3-（4-氯-6-氟-2-三氟甲基苯并咪唑-7-基）-1-甲基的PPO抑制剂化合物处理该领域 6-三氟甲基-2,4-（1H，3H）嘧啶二酮在用新烟碱类化合物处理的大豆或玉米种子之前或之后播种。

公开(公告)号：US08111442B2

公开(公告)日：2012-02-07

申请号：US12969649

申请日：2010-12-16

申请人： Hajime Ikeda ,  Makoto Higashikawa

发明人： Hajime Ikeda ,  Makoto Higashikawa

IPC分类号： G02F1/03 ,  G09G3/38 ,  B28B7/36

CPC分类号： G02F1/1506

摘要： A display apparatus using electroplating on an electrode for modulating light includes a layer formed on the electrode. The layer has an insulator with a gap therein, and conductive fine particles are dispersed in the gap.

摘要翻译： 在用于调制光的电极上使用电镀的显示装置包括在电极上形成的层。 该层具有在其中具有间隙的绝缘体，并且导电细颗粒分散在间隙中。

公开(公告)号：US07750367B2

公开(公告)日：2010-07-06

申请号：US11711711

申请日：2007-02-28

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L29/165 ,  H01L29/786

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US07642179B2

公开(公告)日：2010-01-05

申请号：US11199597

申请日：2005-08-08

申请人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

发明人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3063 ,  H01L21/30635

摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.

摘要翻译： 一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤 在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。 阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。

公开(公告)号：US20090021822A1

公开(公告)日：2009-01-22

申请号：US12168517

申请日：2008-07-07

申请人： Hajime Ikeda

发明人： Hajime Ikeda

IPC分类号： G02F1/15

CPC分类号： G02F1/153 ,  G02F1/133553 ,  G02F1/1347

摘要： An object of the present invention is to provide a reflection type display apparatus that has reduced unwanted reflection when black is displayed, has a high reflectance when white is displayed and can provide color display. For that object, a reflection type display apparatus according to the present invention includes: a first light modulating layer 101 for controlling electrically and externally a light absorbing state and a light transmitting state; a second light modulating layer 102 for controlling electrically and externally a light reflecting state and the light transmitting state; and a reflector 9 for reflecting light in a particular wavelength band, wherein the first light modulating layer 101, the second light modulating layer 102 and the reflector 9 are arranged in this order from a light incidence side.

摘要翻译： 本发明的目的是提供一种当显示黑色时减少了不希望的反射的反射型显示装置，当显示白色时具有高的反射率并且可以提供彩色显示。 对于该目的，根据本发明的反射型显示装置包括：第一光调制层101，其用于在外部控制光吸收状态和透光状态; 第二光调制层102，其用于控制​​光和外部的反射光和透光状态; 以及用于反射特定波长带中的光的反射器9，其中第一光调制层101，第二光调制层102和反射器9从光入射侧依次排列。

公开(公告)号：US20070272944A1

公开(公告)日：2007-11-29

申请号：US11711711

申请日：2007-02-28

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L31/00

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。