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64 条记录 (耗时 0.032 秒)

    Image sensor having boosted reset
    32.
    发明授权
    Image sensor having boosted reset 有权
    图像传感器具有升压复位功能

    公开(公告)号：US07053945B1

    公开(公告)日：2006-05-30

    申请号：US09917195

    申请日：2001-07-26

    申请人： Song Xue

    发明人： Song Xue

    IPC分类号： H04N5/335 ,  H03K17/16 ,  G05F1/10

    CPC分类号： H03K19/01714 ,  H03K19/01707 ,  H04N5/363 ,  H04N5/3698 ,  H04N5/3765

    摘要： A power supply reset boosting element which boosts a level of the reset voltage to a level higher than the level of the power supply. The boosted voltage is isolated from both the power supply and from undesired switching by special transistors which can withstand the voltage power supply level.

    摘要翻译： 电源复位升压元件，其将复位电压的电平升高到高于电​​源电平的电平。 升压电压与电源和不需要的开关隔离，可以承受电压电源电平的特殊晶体管。

    NAND based resistive sense memory cell architecture
    35.
    发明授权
    NAND based resistive sense memory cell architecture 有权
    基于NAND的电阻式读写单元架构

    公开(公告)号：US08363442B2

    公开(公告)日：2013-01-29

    申请号：US12903716

    申请日：2010-10-13

    申请人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

    发明人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

    IPC分类号： G11C5/02

    CPC分类号： H01L27/24 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/75 ,  H01L27/228

    摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

    摘要翻译： 各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。 每个单元电池包括与开关元件并联连接的电阻感测元件。 电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。 每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

    Magnetic sensing device including a sense enhancing layer
    37.
    发明授权
    Magnetic sensing device including a sense enhancing layer 有权
    磁感测装置包括感应增强层

    公开(公告)号：US07929259B2

    公开(公告)日：2011-04-19

    申请号：US12816967

    申请日：2010-06-16

    申请人： Zheng Gao ,  Brian W. Karr ,  Song Xue ,  Eric L. Granstrom ,  Khuong T. Tran ,  Yi X. Li

    发明人： Zheng Gao ,  Brian W. Karr ,  Song Xue ,  Eric L. Granstrom ,  Khuong T. Tran ,  Yi X. Li

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121

    摘要： A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.

    摘要翻译： 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层 层。 当磁传感器的电阻面积（RA）积为约1.0＆OHgr·μm2时，磁传感器具有至少约80％的MR比。

    RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE
    38.
    发明申请
    RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE 有权
    使用旋转扭矩的可重新配置的磁性逻辑器件

    公开(公告)号：US20110069536A1

    公开(公告)日：2011-03-24

    申请号：US12956487

    申请日：2010-11-30

    申请人： Xiaohua Lou ,  Dimitar Dimitrov ,  Song Xue

    发明人： Xiaohua Lou ,  Dimitar Dimitrov ,  Song Xue

    IPC分类号： G11C11/16 ,  H03K19/168 ,  H01L29/82

    CPC分类号： G11C11/1675 ,  G11C11/161

    摘要： Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.

    摘要翻译： 用作存储器件并可根据需要重新配置或重新编程的旋转扭矩磁逻辑器件。 在一些实施例中，逻辑器件是单个磁性元件，其中具有钉扎层，自由层和阻挡层，或者在其它实施例中，逻辑器件具有串联的两个磁性元件。 可以通过元件施加两个输入电流来配置或编程元件。 在使用中，逻辑输入数据（如电流）通过编程元件传递，定义元件上的电阻和由此产生的逻辑输出。 磁性逻辑器件可用于一体式的全功能磁芯片。

    NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE
    39.
    发明申请
    NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 失效
    具有可编程电容的非易失性多位存储器

    公开(公告)号：US20100309717A1

    公开(公告)日：2010-12-09

    申请号：US12857717

    申请日：2010-08-17

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar Dimitrov ,  Michael Tang ,  Song Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar Dimitrov ,  Michael Tang ,  Song Xue

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。 栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。 固体电解质电池具有在至少两个状态之间可控制的电容。 栅极接触层电耦合到电压源。 第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。