摘要:
An image sensor chip is formed with the image sensor abutting up to three edges of the chip. Certain parts of the row logic which are required to be adjacent to each of the rows are placed into the array, in place of certain pixels of the array. Those missing pixels are then interpolated.
摘要:
Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.
摘要:
A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要:
The invention relates to a method for bad pixel classification for an image sensor having a plurality of sensing elements. The method includes capturing a plurality of images using the image sensor, determining based on a pre-determined criterion, using an image of the plurality of images and a threshold value selected from one or more pre-determined threshold values, whether a sensing element in the image sensor is defective to generate a vote, wherein a threshold parameter associated with the pre-determined criterion is set to the threshold value, tallying the vote to generate a voting count by performing iterations of the determining step using different images of the plurality of images and different threshold values of the one or more pre-determined threshold values, and classifying the sensing element as a bad pixel if the voting count exceeds a pre-determined classification threshold.
摘要:
In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.
摘要翻译:在本发明的一些实施例中,非易失性存储单元在第一和第二电极之间设置有第一电极,第二电极以及铁电金属氧化物和铁电材料层的一个或多个侧层。 铁电材料层可以设置在例如铁电金属氧化物的相邻的两个侧层之间或者设置在单层铁电金属氧化物和电极之间。 在一些情况下,铁电金属氧化物可以包括均匀的层状结构,例如诸如Bi 4 Ti 3 O 12的铋层结构的铁电材料。 在一些实施例中,铁电材料层至少部分地由PbZrxTi1-xO3形成。 还提供了包括这种存储单元的非易失性存储器阵列。
摘要:
A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 Ω·μm2.
摘要:
A power supply reset boosting element which boosts a level of the reset voltage to a level higher than the level of the power supply. The boosted voltage is isolated from both the power supply and from undesired switching by special transistors which can withstand the voltage power supply level.
摘要:
A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.
摘要:
A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is positioned on at least one of the air bearing sidewall, the back sidewall, the first sidewall, and the second sidewall. Each sidewall is transverse to the layers of the magnetoresistive sensor.
摘要:
A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.