公开(公告)号：US20190252429A1

公开(公告)日：2019-08-15

申请号：US16398133

申请日：2019-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chuan-Pu LIU

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

公开(公告)号：US20190096951A1

公开(公告)日：2019-03-28

申请号：US15882382

申请日：2018-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： YUN-WEI CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Shih-Hsun HSU

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

公开(公告)号：US20190096830A1

公开(公告)日：2019-03-28

申请号：US15906214

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L23/00 ,  H01L27/146

Abstract: A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

公开(公告)号：US20180026061A1

公开(公告)日：2018-01-25

申请号：US15721201

申请日：2017-09-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Bo-Tsung TSAI ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU ,  Yun-Wei CHENG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer.

公开(公告)号：US20170301720A1

公开(公告)日：2017-10-19

申请号：US15635318

申请日：2017-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Kun-Huei LIN ,  Chun-Hao CHOU ,  Tzu-Hsuan HSU ,  Ching-Chun WANG ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

公开(公告)号：US20170110494A1

公开(公告)日：2017-04-20

申请号：US15171959

申请日：2016-06-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Yun-Wei CHENG ,  Kuo-Cheng LEE ,  Chun-Hao CHOU ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.

公开(公告)号：US20170077157A1

公开(公告)日：2017-03-16

申请号：US14850727

申请日：2015-09-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

Abstract translation: 半导体器件包括衬底，器件层，抗反射涂层，反射结构，复合栅格结构，钝化层和滤色器。 器件层设置在衬底上，沟槽在器件层和衬底中形成。 抗反射涂层保形地覆盖器件层，衬底和沟槽。 反射结构分别设置在沟槽中的抗反射涂层上。 复合网格结构覆盖抗反射涂层和反射结构。 复合栅格结构包括通过复合栅格结构的空穴，并且复合栅格结构包括顺序地堆叠在反射结构上的金属栅格层和电介质栅格层。 钝化层保形地覆盖复合网格结构。 滤色器分别填充空腔。

公开(公告)号：US20160329364A1

公开(公告)日：2016-11-10

申请号：US14934648

申请日：2015-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Horng-Huei TSENG ,  Hsin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Yung-Lung HSU ,  Yun-Wei CHENG

IPC: H01L27/146 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L27/1462 ,  H01L21/0206 ,  H01L21/02181 ,  H01L21/0228 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A method for forming a high dielectric constant (high-κ) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-κ dielectric layer on the substrate. A chloride concentration of the high-κ dielectric layer is lower than about 8 atoms/cm3.

Abstract translation: 一种在基板上形成高介电常数（高κ）电介质层的方法，包括在基板的表面上进行预清洁处理。 在表面上引入氯化物前体。 将氧化剂引入表面以在基底上形成高κ介电层。 高κ电介质层的氯化物浓度低于约8原子/ cm3。

公开(公告)号：US20230118159A1

公开(公告)日：2023-04-20

申请号：US18066744

申请日：2022-12-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146 ,  H01L31/103 ,  H01L31/0352

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

公开(公告)号：US20220231075A1

公开(公告)日：2022-07-21

申请号：US17717489

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Shih-Hsun HSU

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.