公开(公告)号：US20230032950A1

公开(公告)日：2023-02-02

申请号：US17390298

申请日：2021-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Che HSIEH ,  Chi-Lun LU ,  Ping-Hsun LIN ,  Fu-Sheng CHU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/40 ,  G03F7/16

Abstract: A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.

公开(公告)号：US20220334462A1

公开(公告)日：2022-10-20

申请号：US17855630

申请日：2022-06-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Yen-Cheng HO ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F1/24 ,  G03F1/68 ,  G03F1/54 ,  G03F1/52 ,  G03F1/26

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

公开(公告)号：US20220260926A1

公开(公告)日：2022-08-18

申请号：US17740048

申请日：2022-05-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chien-Cheng CHEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Shih-Ming CHANG ,  Tran-Hui SHEN ,  Yen-Cheng HO ,  Chen-Shao HSU

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/78

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US20190258156A1

公开(公告)日：2019-08-22

申请号：US16399843

申请日：2019-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Chia-Jen CHEN ,  Chih-Cheng LIN ,  Ping-Hsun LIN

IPC: G03F1/44 ,  G03F1/76 ,  G03F7/20 ,  G03F1/84 ,  G03F1/22 ,  H01L21/027 ,  G03F1/72 ,  G03F1/54 ,  G03F1/78

Abstract: A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.

公开(公告)号：US20190094683A1

公开(公告)日：2019-03-28

申请号：US15798872

申请日：2017-10-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chue San YOO ,  Chih-Chiang TU ,  Chien-Cheng CHEN ,  Jong-Yuh CHANG ,  Kun-Lung HSIEH ,  Pei-Cheng HSU ,  Hsin-Chang LEE ,  Yun-Yue LIN

IPC: G03F1/68 ,  G03F1/82 ,  G03F1/64 ,  G03F1/22 ,  G03F7/20

Abstract: A method of removing a pellicle from a photomask includes removing a portion of a membrane from a pellicle frame, wherein the pellicle frame remains attached to the photomask following the removing of the portion of the membrane. The method further includes removing the pellicle frame from the photomask. The method further includes cleaning the photomask.

公开(公告)号：US20240393674A1

公开(公告)日：2024-11-28

申请号：US18789516

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kevin TANADY ,  Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Tzu-Yi WANG ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.

公开(公告)号：US20240393673A1

公开(公告)日：2024-11-28

申请号：US18790793

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Cheng CHEN ,  ShinAn KU ,  Ting-Hao HSU ,  Hsin-Chang LEE

IPC: G03F1/22 ,  G01B11/22 ,  G01B11/24 ,  G01J3/02

Abstract: A method of scanning a substrate and determining scratches of the substrate includes transmitting a converging beam of light that comprises multiple wavelengths to the substrate. Each wavelength of the multiple wavelengths focuses at a different distance in a focus interval around and including a surface of the substrate. The method also includes receiving reflected light from the surface of the substrate and determining a height or depth of the surface of the substrate based on a wavelength of the reflected light having a highest intensity.

公开(公告)号：US20240385506A1

公开(公告)日：2024-11-21

申请号：US18787278

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hsin-Chang LEE ,  Chia-Jen CHEN ,  Pei-Cheng HSU ,  Ta-Cheng LIEN

IPC: G03F1/24 ,  G03F1/54

Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

公开(公告)号：US20240094626A1

公开(公告)日：2024-03-21

申请号：US18133945

申请日：2023-04-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Pei-Cheng HSU ,  Wei-Hao LEE ,  Huan-Ling LEE ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F1/62 ,  B82Y30/00 ,  H01L21/027

CPC classification number: G03F1/62 ,  B82Y30/00 ,  H01L21/0274 ,  G03F1/24

Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.

公开(公告)号：US20240069427A1

公开(公告)日：2024-02-29

申请号：US18116684

申请日：2023-03-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ting-Pi SUN ,  Pei-Cheng HSU ,  Hsin-Chang LEE

IPC: G03F1/22

CPC classification number: G03F1/22

Abstract: In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a nanotube layer including a plurality of carbon nanotubes is formed, the nanotube layer is attached to a pellicle frame, and a solvent dipping treatment is performed to the nanotube layer by applying bubbles in a solvent to the nanotube layer.