公开(公告)号：US20210399211A1

公开(公告)日：2021-12-23

申请号：US17288612

申请日：2019-03-28

Applicant: TDK CORPORATION

Inventor： Atsushi TSUMITA ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L43/14

Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring that extends in a second direction different from the first direction and together with the nonmagnetic layer sandwiches the first ferromagnetic layer in the first direction; and an electrode that together with the nonmagnetic layer sandwiches the second ferromagnetic layer in at least a part in the first direction, wherein the electrode is in contact with at least a part of a lateral side surface of the second ferromagnetic layer.

公开(公告)号：US20210383851A1

公开(公告)日：2021-12-09

申请号：US17288036

申请日：2019-02-06

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA

IPC: G11C11/16 ,  G11C11/18 ,  H01F10/32 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10

Abstract: A spin-orbit torque magnetization rotational element includes a first ferromagnetic layer and a spin-orbit torque wiring facing the first ferromagnetic layer and extending in a first direction. The spin-orbit torque wiring has a plurality of atomic planes in which atoms are arranged and the plurality of atomic planes have reference surfaces in which the same atoms are arranged and a buckling surface having a buckling part. The buckling surface has a plurality of first atoms forming a main surface substantially parallel to the reference surfaces and one or more second atoms forming a buckling part bent toward the main surface.

公开(公告)号：US20200312392A1

公开(公告)日：2020-10-01

申请号：US16829188

申请日：2020-03-25

Applicant: TDK CORPORATION

Inventor： Atsushi TSUMITA ,  Yohei SHIOKAWA ,  Eiji KOMURA

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L27/11597

Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.

公开(公告)号：US20200168383A1

公开(公告)日：2020-05-28

申请号：US16069347

申请日：2018-02-22

Applicant: TDK CORPORATION

Inventor： Tohru OIKAWA ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Tatsuo SHIBATA

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.

公开(公告)号：US20190288185A1

公开(公告)日：2019-09-19

申请号：US16292798

申请日：2019-03-05

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32

Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring extending in a first direction; an antiferromagnetic layer laminated on one surface of the spin-orbit-torque wiring; and a first ferromagnetic layer located on a side of the antiferromagnetic layer opposite to the spin-orbit-torque wiring and magnetically coupled with the antiferromagnetic layer by exchange coupling, wherein a length of the antiferromagnetic layer in the first direction is shorter than a length of the spin-orbit-torque wiring in the first direction.

公开(公告)号：US20190148629A1

公开(公告)日：2019-05-16

申请号：US16178082

申请日：2018-11-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Eiji KOMURA ,  Keita SUDA

IPC: H01L43/10 ,  G11C11/18 ,  G11C11/16

Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.

公开(公告)号：US20190074043A1

公开(公告)日：2019-03-07

申请号：US16114692

申请日：2018-08-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Jiro YOSHINARI

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A spin current magnetization reversing element (100) includes a spin orbit torque wiring layer (101) that extends in one direction, a first ferromagnetic layer (102) that is formed on a first surface (101a) of the spin orbit torque wiring layer, and a first insulating layer (103) that is formed on a second surface (101b) on a side opposite to the first ferromagnetic layer (102) side on the surface of the spin orbit torque wiring layer. The first insulating layer (103) contains boron nitride or aluminum nitride.

公开(公告)号：US20180350417A1

公开(公告)日：2018-12-06

申请号：US15778115

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H03B15/00

Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

公开(公告)号：US20180308535A1

公开(公告)日：2018-10-25

申请号：US15956523

申请日：2018-04-18

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A spin current magnetization rotational element including a first ferromagnetic metal layer in which a magnetization direction is variable, and a spin-orbit torque wiring that extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, and is joined to the first ferromagnetic metal layer. The first ferromagnetic metal layer has a lamination structure including a plurality of ferromagnetic constituent layers and a plurality of nonmagnetic constituent layers which are respectively interposed between the ferromagnetic constituent layers adjacent to each other. At least one ferromagnetic constituent layer among the plurality of ferromagnetic constituent layers has a film thickness different from a film thickness of the other ferromagnetic constituent layers, and/or at least one nonmagnetic constituent layer among the plurality of nonmagnetic constituent layers has a film thickness different from a film thickness of the other nonmagnetic constituent layers.

公开(公告)号：US20180159026A1

公开(公告)日：2018-06-07

申请号：US15827852

申请日：2017-11-30

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A spin current magnetization rotational element includes: a magnetization free layer including a synthetic structure consisting of a first ferromagnetic metal layer, a second ferromagnetic metal layer and a first non-magnetic layer sandwiched by the first ferromagnetic metal layer and the second ferromagnetic metal layer; and an antiferromagnetic spin-orbit torque wiring that extends in a second direction intersecting with a first direction that is a lamination direction of the synthetic structure and is joined to the first ferromagnetic metal layer, wherein the spin current magnetization rotational element is configured to change a magnetization direction of the magnetization free layer by applying current to the antiferromagnetic spin-orbit torque wiring.