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公开(公告)号:US09397685B1
公开(公告)日:2016-07-19
申请号:US14806826
申请日:2015-07-23
Applicant: Texas Instruments Incorporated
Inventor: Sriram Narayanan , Srinath Mathur Ramaswamy , Arup Polley , Ajit Sharma
CPC classification number: H03M1/1245
Abstract: Described examples include low power analog front end circuits for sensing repeating signal waveforms, including a first sampling circuit to sample an input signal, an analog detector circuit to provide a detector output signal representing a feature of the input signal, a second sampling circuit to sample the detector output signal, and a control circuit to control a sample rate or other analog front end operating parameter at least partially according to the sampled detector output signal, and to selectively enable and disable the analog detector circuit at least partially according to a model representing an expected repeating waveform of the input signal.
Abstract translation: 所描述的示例包括用于感测重复信号波形的低功率模拟前端电路,包括用于对输入信号进行采样的第一采样电路,模拟检测器电路,以提供表示输入信号特征的检测器输出信号,第二采样电路 检测器输出信号,以及控制电路,用于至少部分地根据采样的检测器输出信号来控制采样率或其他模拟前端工作参数,并且至少部分地根据代表的模型来选择性地启用和禁用模拟检测器电路 预期的输入信号的重复波形。
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公开(公告)号:US09319059B1
公开(公告)日:2016-04-19
申请号:US14732676
申请日:2015-06-06
Applicant: Texas Instruments Incorporated
Inventor: Ajit Sharma , Seung Bae Lee , Srinath Mathur Ramaswamy , Sriram Narayanan , Arup Polley
CPC classification number: H03M1/46 , H03M1/1057 , H03M1/38 , H03M1/403 , H03M1/468
Abstract: The silicon real estate required for the semiconductor fabrication of a calibrated capacitor-based successive approximation register (SAR) analog-to-digital converter (ADC) (100) is substantially reduced by using a number of shared capacitors (SC1-SCs−1) which are used as calibration capacitors when operating in a calibration mode and as bit capacitors when operating in a normal mode.
Abstract translation: 基于校准电容器的逐次逼近寄存器(SAR)模数转换器(ADC)(100)的半导体制造所需的硅绝缘体通过使用多个共用电容器(SC1-SCs-1)而大大降低, 它们在校准模式下工作时用作校准电容器,在正常模式下工作时用作位电容器。
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公开(公告)号:US20130176639A1
公开(公告)日:2013-07-11
申请号:US13712363
申请日:2012-12-12
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Arup Polley , Rajarshi Mukhopadhyay , Reza Sharifi , Mark A. Wolfe
IPC: G11B21/21
CPC classification number: G11B21/21 , G11B5/6029 , G11B5/6076
Abstract: A data storage system for detecting a location of a head relative to a magnetic media is described. This system comprises arms, a preamplifier circuit coupled to the arms for controlling the arms, a proximity sensing system positioned within the preamplifier circuit, the proximity sensing system comprising: an input stage for transmitting an input sense signal; a programmable gain stage coupled to receive the input sense signal and operative for transmitting a gain signal in response to receiving the input sense signal; a multiplexer coupled to receive the gain signal and at least one control signal, the multiplexer operative for transmitting a multiplexed signal; a detector coupled to receive the multiplexed signal and a second control signal, the detector operative for transmitting an output signal; wherein an amplitude associated with the output signal enables detecting the location of the head.
Abstract translation: 描述了一种用于检测头相对于磁性介质的位置的数据存储系统。 该系统包括臂,耦合到用于控制臂的臂的前置放大器电路,位于前置放大器电路内的接近感测系统,所述接近感测系统包括:用于传输输入感测信号的输入级; 可编程增益级,其被耦合以接收所述输入检测信号并且用于响应于接收所述输入检测信号而发送增益信号; 多路复用器,其耦合以接收增益信号和至少一个控制信号,多路复用器用于发送多路复用信号; 耦合以接收所述多路复用信号的检测器和第二控制信号,所述检测器用于发送输出信号; 其中与输出信号相关联的振幅使得能够检测头部的位置。
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公开(公告)号:US11415643B2
公开(公告)日:2022-08-16
申请号:US16657281
申请日:2019-10-18
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Baher S. Haroun , Arup Polley , Srinath M. Ramaswamy
Abstract: An amplifier includes a graphene Hall sensor (GHS). The GHS includes a graphene layer formed above a substrate, a dielectric structure formed above a channel portion of the graphene layer, and a conductive gate structure formed above at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage. The GHS also includes first and second conductive excitation contact structures coupled with corresponding first and second excitation portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current. The GHS further includes first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer. The amplifier also includes a current sense amplifier (CSA) coupled to the GHS. The CSA senses current output from the GHS.
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公开(公告)号:US20220206044A1
公开(公告)日:2022-06-30
申请号:US17138977
申请日:2020-12-31
Applicant: Texas Instruments Incorporated
Inventor: Arup Polley , Srinath M. Ramaswamy , Baher S. Haroun
IPC: G01R15/20
Abstract: A system comprises first and second Hall-effect sensors and an amplifier. The first Hall-effect sensor has a first bias current direction parallel to a first direction, a pair of first bias input terminals spaced along the first direction, and a pair of first sense output terminals spaced along an orthogonal second direction. The second Hall-effect sensor has a second bias current direction parallel to the second direction, a pair of second bias input terminals spaced along the second direction, and a pair of second sense output terminals connected out of phase with the first sense terminals. The amplifier has a pair of amplifier input terminals coupled to the first and second sense terminals.
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公开(公告)号:US11353519B1
公开(公告)日:2022-06-07
申请号:US17114589
申请日:2020-12-08
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Arup Polley , Srinath M. Ramaswamy , Jo Bito , Baher S. Haroun
Abstract: A Hall sensor circuit includes a first Hall sensor, a second Hall sensor, a first preamplifier circuit, a second preamplifier circuit, a subtractor circuit, and a duty cycling circuit. The first preamplifier circuit includes an input and an output. The input is coupled to the first Hall sensor. The second preamplifier circuit includes a first input, a second input, and an output. The first input is coupled to the second Hall sensor. The subtractor circuit includes a first input coupled to the output of the first preamplifier circuit, a second input coupled to the output of the second preamplifier circuit, and an output coupled to the second input of the second preamplifier circuit. The duty cycling circuit is coupled to the second preamplifier circuit and the second Hall sensor.
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公开(公告)号:US11307267B1
公开(公告)日:2022-04-19
申请号:US17092865
申请日:2020-11-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Arup Polley , Srinath M. Ramaswamy , Baher S. Haroun
Abstract: A system includes a first amplifier and a first Hall sensor group coupled to the first amplifier. The system includes a second amplifier and a second Hall sensor group coupled to the second amplifier, where the second Hall sensor group includes a spinning Hall group. The system includes a first demodulator, where the first demodulator input is coupled to the first amplifier output. The system includes a second demodulator, where the second demodulator input is coupled to the second amplifier output. The system also includes a subtractor, the first subtractor input coupled to the first demodulator output, and the second subtractor input coupled to the second demodulator output. The system includes a filter coupled to the subtractor output and to a second input of the first amplifier, and a calibration module coupled to the subtractor output.
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公开(公告)号:US11296237B2
公开(公告)日:2022-04-05
申请号:US16501731
申请日:2019-05-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Archana Venugopal , Luigi Colombo , Arup Polley
IPC: H01L29/786 , H01L29/20 , H01L29/267 , H01L29/49 , H01L29/45 , H01L29/66 , H01L21/02 , H01L21/8258 , H01L27/092 , H01L29/16
Abstract: A microelectronic device includes a gated graphene component over a semiconductor material. The gated graphene component includes a graphitic layer having at least one layer of graphene. The graphitic layer has a channel region, a first connection and a second connection make electrical connections to the graphitic layer adjacent to the channel region. The graphitic layer is isolated from the semiconductor material. A backgate region having a first conductivity type is disposed in the semiconductor material under the channel region. A first contact field region and a second contact field region are disposed in the semiconductor material under the first connection and the second connection, respectively. At least one of the first contact field region and the second contact field region has a second, opposite, conductivity type. A method of forming the gated graphene component in the microelectronic device with a transistor is disclosed.
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公开(公告)号:US20200240811A1
公开(公告)日:2020-07-30
申请号:US16844547
申请日:2020-04-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Arup Polley , Srinath Ramaswamy , Baher S. Haroun , Rajarshi Mukhopadhyay
Abstract: A first amplifier has an input to receive a Hall-signal output current from a first Hall element and has an output to output feedback current in response to the received Hall-signal output current. The Hall-signal output current is impeded by an impedance of the first Hall element. The feedback current is coupled to counterpoise the Hall-signal output current at the input, and a voltage at the output is an amplified Hall output signal. A second amplifier generates a high-frequency portion output signal in response to a difference between the amplified Hall output signal and a Hall-signal output signal from a second Hall element. A filter reduces high-frequency content of the high-frequency portion output signal and generates an offset correction signal. A third amplifier generates a corrected Hall signal in response to a difference between the amplified Hall output signal and the offset correction signal.
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公开(公告)号:US10197638B2
公开(公告)日:2019-02-05
申请号:US15186383
申请日:2016-06-17
Applicant: Texas Instruments Incorporated
Inventor: Arup Polley , Srinath Ramaswamy , Baher S. Haroun , Rajarshi Mukhopadhyay
Abstract: A high bandwidth Hall sensor includes a high bandwidth path and a low bandwidth path. The relatively high offset (from sensor offset) of the high bandwidth path is estimated using a relatively low offset generated by the low bandwidth path. The relatively high offset of the high bandwidth path is substantially reduced by combining the output of the high bandwidth path with the output of the low bandwidth path to generate a high bandwidth, low offset output. The offset can be further reduced by including transimpedance amplifiers in the high bandwidth sensors to optimize the frequency response of high bandwidth Hall sensor.
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