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公开(公告)号：US10147537B2
公开(公告)日：2018-12-04
申请号：US15832884
申请日：2017-12-06
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Sudtida Lavangkul , Erika Lynn Mazotti , William David French
IPC: H01L27/02 , H01F27/34 , H01L43/12 , H01L23/528 , H01L23/522 , G01R33/04 , G01R33/00 , H01F27/24 , H01F27/28 , H01L27/22 , H01L43/02
Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
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公开(公告)号：US10017851B2
公开(公告)日：2018-07-10
申请号：US14979003
申请日：2015-12-22
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Mona Eissa , Neal Thomas Murphy
CPC classification number: C23C16/06 , C23C16/56 , G01R33/04 , G01R33/045 , G01R33/05
Abstract: A method of magnetic forming an integrated fluxgate sensor includes providing a patterned magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a first metal layer that is on or in an interlevel dielectric layer (ILD) which is on a substrate. A second nonmagnetic metal or metal alloy layer is deposited including over and on sidewalls of the magnetic core. The second nonmagnetic metal or metal alloy layer is patterned, where after patterning the second nonmagnetic metal or metal alloy layer together with the first nonmagnetic metal or metal alloy layer encapsulates the magnetic core to form an encapsulated magnetic core. After patterning, the encapsulated magnetic core is magnetic field annealed using an applied magnetic field having a magnetic field strength of at least 0.1 T at a temperature of at least 150° C.
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公开(公告)号：US09893119B2
公开(公告)日：2018-02-13
申请号：US15070413
申请日：2016-03-15
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US09870858B2
公开(公告)日：2018-01-16
申请号：US15399937
申请日：2017-01-06
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Sudtida Lavangkul , Erika Lynn Mazotti , William David French
IPC: H01L27/02 , H01F27/34 , H01F27/24 , H01F27/28 , H01L27/22 , H01L43/02 , H01L43/12 , H01L23/528 , H01L23/522 , G01R33/04 , G01R33/00
CPC classification number: H01F27/346 , G01R33/0029 , G01R33/04 , H01F27/24 , H01F27/28 , H01L23/5226 , H01L23/528 , H01L27/22 , H01L43/02 , H01L43/12
Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
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公开(公告)号：US20170328961A1
公开(公告)日：2017-11-16
申请号：US15152002
申请日：2016-05-11
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Ricky Alan Jackson , Ann Margaret Gabrys
Abstract: A fluxgate device that includes a first magnetic core and a second magnetic core. The first magnetic core has a first magnetized direction that deviates from a first sense direction by more than 0 degree and less than 90 degrees. The second magnetic core is arranged orthogonally to the first magnetic core. The second magnetic core has a second magnetized direction that deviates from a second sense direction by more than 0 degree and less than 90 degrees.
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Patent Agency Ranking
公开(公告)号：US09810745B2
公开(公告)日：2017-11-07
申请号：US15429388
申请日：2017-02-10
Applicant: Texas Instruments Incorporated
Inventor： Anuraag Mohan , Dok Won Lee , William French , Erika L. Mazotti
CPC classification number: G01R33/04 , G01R33/0052 , G01R33/09 , H01L29/26 , H01L43/00 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.
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公开(公告)号：US20170153299A1
公开(公告)日：2017-06-01
申请号：US15429388
申请日：2017-02-10
Applicant: Texas Instruments Incorporated
Inventor： Anuraag Mohan , Dok Won Lee , William French , Erika L. Mazotti
CPC classification number: G01R33/04 , G01R33/0052 , G01R33/09 , H01L29/26 , H01L43/00 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.
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38.发明申请INTEGRATED DUAL AXIS FLUXGATE SENSOR USING DOUBLE DEPOSITION OF MAGNETIC MATERIAL 有权使用双重沉积磁性材料的集成双轴FLUXGATE传感器公开(公告)号：US20150338474A1
公开(公告)日：2015-11-26
申请号：US14286517
申请日：2014-05-23
Applicant: Texas Instruments Incorporated
Inventor： Anuraag Mohan , Dok Won Lee , William French , Erika L. Mazotti
CPC classification number: G01R33/04 , G01R33/0052 , G01R33/09 , H01L29/26 , H01L43/00 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.
Abstract translation: 一种通过使用复合各向异性磁芯结构制造磁通门装置来测量两个正交的，在平面方向上的磁场的方法。
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公开(公告)号：US20240319234A1
公开(公告)日：2024-09-26
申请号：US18737108
申请日：2024-06-07
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Jo Bito , Keith Ryan Green
CPC classification number: G01R15/207 , G01R15/202 , H01L23/49586 , H10N52/00 , H10N52/80 , H10B61/00 , H10N59/00
Abstract: In one example, a device comprises a lead frame, a semiconductor die, a spacer, and a magnetic concentrator. The lead frame comprises a conductor. The spacer is between the semiconductor die and the conductor. The magnetic concentrator overlaps at least partially with the conductor.
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公开(公告)号：US12069956B2
公开(公告)日：2024-08-20
申请号：US17487877
申请日：2021-09-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Fuchao Wang , Christopher Eric Brannon , William David French , Dok Won Lee
CPC classification number: H10N50/01 , G01R33/0052 , G01R33/096 , H01L21/30604 , H10N50/10 , H10N50/80 , H10N59/00
Abstract: Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.
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