公开(公告)号：US09556015B1

公开(公告)日：2017-01-31

申请号：US14925867

申请日：2015-10-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Tsai-Hao Hung ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Tao-Cheng Liu

IPC分类号： H01L21/00 ,  B81B1/00 ,  B81C1/00

CPC分类号： B81B1/004 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/00087 ,  B81C1/00619 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2203/0118

摘要： The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

摘要翻译： 本公开提供了一种用于微机电系统（MEMS）装置的衬底结构。 衬底结构包括帽和微机电系统（MEMS）衬底。 盖具有空腔，并且MEMS基板设置在盖上。 MEMS基板具有暴露空腔的多个通孔，并且通孔的纵横比大于30。

公开(公告)号：US20160240568A1

公开(公告)日：2016-08-18

申请号：US14620460

申请日：2015-02-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tsai-Hao Hung ,  Han-Tang Lo ,  Shih-Chi Kuo ,  Tsung-Hsien Lee

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/761 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2221/1026

摘要： The present disclosure relates to a method of forming a masking structure having a trench with a high aspect ratio, and an associated structure. In some embodiments, the method is performed by forming a first material over a substrate. The first material is selectively etched and a second material is formed onto the substrate at a position abutting sidewalls of the first material, resulting in a pillar of sacrificial material surrounded by a masking material. The pillar of sacrificial material is removed, resulting in a masking layer having a trench that extends into the masking material. Using the pillar of sacrificial material during formation of the trench allows the trench to have a high aspect ratio. For example, the sacrificial material allows for a plurality of masking layers to be iteratively formed to have laterally aligned openings that collectively form a trench extending through the masking layers.

摘要翻译： 本公开涉及形成具有高纵横比的沟槽和相关结构的掩模结构的方法。 在一些实施例中，通过在衬底上形成第一材料来执行该方法。 选择性地蚀刻第一材料并且在与第一材料的侧壁相邻的位置处在基底上形成第二材料，从而产生由掩蔽材料包围的牺牲材料的柱。 去除牺牲材料的柱，得到具有延伸到掩模材料中的沟槽的掩模层。 在形成沟槽期间使用牺牲材料的支柱允许沟槽具有高的纵横比。 例如，牺牲材料允许迭代地形成多个掩模层以具有共同形成延伸穿过掩模层的沟槽的横向对齐的开口。