公开(公告)号：US4838993A

公开(公告)日：1989-06-13

申请号：US128088

申请日：1987-12-03

申请人： Kenji Aoki ,  Masafumi Shimbo

发明人： Kenji Aoki ,  Masafumi Shimbo

IPC分类号： B82B1/00 ,  H01L21/20 ,  H01L21/203 ,  H01L21/336 ,  H01L29/08 ,  H01L29/36 ,  H01L29/78

CPC分类号： H01L29/66636 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/78 ,  H01L29/7834 ,  Y10S148/05

摘要： A novel MOS field effect transistor which operates at high speed and with low power consumption has impurity doped source and drain regions deposited at 850.degree. C. or less by molecular layer epitaxial growth method. The molecular layer epitaxial growth is concurrently carried out with the control of impurity doping concentration so that the layers epitaxially deposited has a lightly doped region and a heavily doped region. Since the thickness of the growth layer can be controlled with a degree of accuracy on the order of an atom layer and thermal diffusions can remarkably be reduced by the low deposition temperature, an overlap of a gate over each of the source and drain regions can be reduced to 500 .ANG. or less.

摘要翻译： 一种以高速和低功耗工作的新型MOS场效应晶体管通过分子层外延生长法在850℃或更低温度下沉积杂质掺杂源极和漏极区。 通过控制杂质掺杂浓度同时进行分子层外延生长，使得外延沉积的层具有轻掺杂区域和重掺杂区域。 由于生长层的厚度可以以原子层的顺序精度控制，并且通过低沉积温度可以显着降低热扩散，所以源极和漏极区域之间的栅极的重叠可以是 降至500 ANGSTROM以下。

公开(公告)号：US4834831A

公开(公告)日：1989-05-30

申请号：US93505

申请日：1987-09-04

申请人： Junichi Nishizawa ,  Kenji Aoki

发明人： Junichi Nishizawa ,  Kenji Aoki

IPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/16 ,  C30B29/06 ,  H01L21/205

CPC分类号： C30B29/06 ,  C30B25/02 ,  C30B25/14 ,  C30B29/68

摘要： A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the gas in the growth chamber under controlled conditions and thereby growing the single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer. In an alternate method for growing a single crystal thin film of an element semiconductor, the sole gas containing the element semiconductor is continuously fed onto the substrate for a given period of time, thereby forming a single crystal thin film of element semiconductor having a desired thickness. According to the present invention, there can be obtained single crystal thin films with high quality in a high reproducibility, by simplified operating parameters and growing apparatus.

摘要翻译： 一种用于生长元件半导体的单晶薄膜的方法，其包括重复将含有元素半导体的单种气体作为组分元素的单一种类的气体进料到在生长室中加热的衬底上，然后在生长中排出气体的连续操作 室，由此以单分子层的精度将所述元件半导体的单晶薄膜生长到所需厚度。 在用于生长元件半导体的单晶薄膜的替代方法中，将含有元件半导体的唯一气体连续地馈送到衬底上给定的时间，从而形成具有期望厚度的元件半导体的单晶薄膜 。 根据本发明，可以通过简化的操作参数和生长装置，以高再现性获得高质量的单晶薄膜。

公开(公告)号：US4754293A

公开(公告)日：1988-06-28

申请号：US33371

申请日：1987-04-02

申请人： Hiroyuki Aizawa ,  Mitsuaki Maruyama ,  Shigeru Sawada ,  Yasuhiro Gyoutoku ,  Hiroshi Niki ,  Kouichi Higashimura ,  Kenji Aoki

发明人： Hiroyuki Aizawa ,  Mitsuaki Maruyama ,  Shigeru Sawada ,  Yasuhiro Gyoutoku ,  Hiroshi Niki ,  Kouichi Higashimura ,  Kenji Aoki

IPC分类号： G03G15/00 ,  G03G15/30 ,  G03G21/16 ,  G03G21/18 ,  G01D15/14

CPC分类号： G03G21/1814 ,  G03G15/30 ,  G03G15/65 ,  G03G21/1633 ,  G03G2215/00371 ,  G03G2215/00383 ,  G03G2215/00413 ,  G03G2215/00421 ,  G03G2215/00544 ,  G03G2221/16 ,  G03G2221/1636 ,  G03G2221/1642 ,  G03G2221/1654 ,  G03G2221/1672 ,  G03G2221/1675 ,  G03G2221/1678 ,  G03G2221/1687 ,  G03G2221/169 ,  G03G2221/1693 ,  G03G2221/183 ,  G03G2221/1846

摘要： An image forming apparatus employing a face-down delivery system in which the plane of the recording medium at any position relative to any other position assumed by the recording medium beginning with a stacking tray and ending with a delivery tray does not exceed 90.degree.. The apparatus includes a detachable cartridge which includes a photosensitive member, a charging device and a cleaning device. In one preferred embodiment, register rollers and fixing rollers are positioned relative to each other such that a substantially zero angular deviation exists in the path traveled by the recording medium between these two pairs of rollers.

公开(公告)号：US08983880B2

公开(公告)日：2015-03-17

申请号：US13824122

申请日：2012-11-01

申请人： Kenji Aoki ,  Satoshi Morinaga

发明人： Kenji Aoki ,  Satoshi Morinaga

IPC分类号： G06F15/18 ,  G06N99/00 ,  G06Q30/02

CPC分类号： G06N99/005 ,  G06Q30/02

摘要： To provide an information spread scale prediction device capable of accurately predicting the number of future contributions for a specific topic in SNS and the like. The information spread scale prediction device includes: a learning text data input unit which acquires learning text data from a specific website; a node influence learning unit which calculates the influence for the number of statements by each group to which a node specifying a single specific user belongs for the topic from the number of statements by each classified topic, and stores it as learning data; a prediction text data input unit which acquires prediction text data from the specific website after storing the learning data; and a future contribution number prediction unit which predicts and outputs the number of contributions at a specific future time of the topic based on the number of statements of each topic and the learning data.

摘要翻译： 提供能够准确地预测SNS等中的特定主题的未来贡献的数量的信息扩展规模预测装置。 信息扩展规模预测装置包括：学习文本数据输入单元，其从特定网站获取学习文本数据; 节点影响学习单元，根据每个分类主题的语句数，计算对于指定单个特定用户的节点所属的每个组的语句数量的影响，并将其存储为学习数据; 预测文本数据输入单元，其在存储所述学习数据之后从所述特定网站获取预测文本数据; 以及未来贡献数量预测单元，其基于每个主题的语句数量和学习数据来预测并输出该主题的特定将来时间的贡献数量。

公开(公告)号：US08784159B2

公开(公告)日：2014-07-22

申请号：US13502879

申请日：2010-09-28

申请人： Ryoya Terakawa ,  Kenji Aoki

发明人： Ryoya Terakawa ,  Kenji Aoki

IPC分类号： H01L21/304

CPC分类号： B24B37/105 ,  B24B37/042

摘要： In a method for polishing a semiconductor wafer by rotating a work carrier and a table while pressing the semiconductor wafer retained by the work carrier against a polishing cloth mounted on the table, at a time when the table and the work carrier both having been at rest are rotated, each at a predetermined number of revolutions, in a condition that the polishing cloth and the semiconductor wafer are pressed against each other, to thereby start polishing, a table acceleration is maintained smaller than a work carrier acceleration. By such maintaining the table acceleration smaller than the work carrier acceleration, vibrations to be generated when the polishing is started can be prevented. In the method for polishing a semiconductor wafer according to the present invention, the diameter of the semiconductor wafer is preferably defined to be 30% or more of the diameter of the table.

摘要翻译： 在通过使工作载体和工作台旋转而将由工作载体保持的半导体晶片压靠在安装在工作台上的研磨布上的情况下，在工作台和工作台两者都处于静止状态的时刻来研磨半导体晶片的方法 在抛光布和半导体晶片彼此挤压的条件下以预定转数旋转，从而开始抛光，台加速度保持小于作业载体加速度。 通过这样保持工作台加速度小于工作载体加速度，可以防止在抛光开始时产生的振动。 在本发明的半导体晶片的研磨方法中，半导体晶片的直径优选为台的直径的30％以上。

公开(公告)号：US08349165B2

公开(公告)日：2013-01-08

申请号：US13123772

申请日：2009-11-12

申请人： Yasuyuki Tanaka ,  Kenji Aoki

发明人： Yasuyuki Tanaka ,  Kenji Aoki

IPC分类号： C25B1/16 ,  C25B11/04

CPC分类号： C25B11/00 ,  C25B11/04 ,  C25B11/0478 ,  C25D3/562

摘要： Soluble nickel and tin contained in a coating layer are eluted into an aqueous solution by bringing a cathode coated with a nickel-tin alloy into contact with an aqueous solution of an alkali metal hydrogen carbonate such as sodium hydrogen carbonate, thereby reducing the amounts of these metals eluted during electrolysis.

摘要翻译： 通过将涂覆有镍 - 锡合金的阴极与碱金属碳酸氢盐如碳酸氢钠的水溶液接触，将包含在涂层中的可溶性镍和锡溶解到水溶液中，从而减少这些量 金属在电解过程中被洗脱。

公开(公告)号：US20120331024A1

公开(公告)日：2012-12-27

申请号：US13515554

申请日：2010-12-07

申请人： Kenji Aoki ,  Takayuki Nakata

发明人： Kenji Aoki ,  Takayuki Nakata

IPC分类号： G06F7/00

CPC分类号： G06F17/18 ,  G01S19/39

摘要： An information processing device can obtain an accurate result of regression analysis even if a mean and a variance of a response variable depends on an explanatory variable taking continuous variable.An information processing device calculates a mean of and a variance of a response variable for each range which is determined based on a partition candidate being information on partitioning a domain of an explanatory variable into a plurality of ranges based on observed data including information representing the explanatory variable and information representing the response variable being an observed value in terms of the explanatory variable and the mean and the variance are dependent on the explanatory variable. The information processing device selects a specific partition candidate among a plurality of the partition candidates by using an information criterion which is calculated based on the observed data and the calculated mean and variance of the response variable. The information processing device calculates a smooth function representing the variance of the response variable in the domain of the explanatory variable and a smooth function representing the mean of the response variable in the domain of the explanatory variable based on the mean and the variance calculated for each range determined based on the specific partition candidate.

摘要翻译： 即使响应变量的均值和方差取决于连续变量的解释变量，信息处理设备也可以获得回归分析的准确结果。 信息处理装置计算基于分区候选确定的每个范围的响应变量的平均值和方差，所述分区候选是基于将表示解释性的信息的观察数据的解释变量的区域划分为多个范围的信息 变量和表示响应变量的信息是解释变量和平均值和方差的观察值取决于解释变量。 信息处理装置通过使用基于观测数据计算的信息标准和所计算的响应变量的平均值和方差来选择多个分区候选中的特定分区候选。 信息处理装置计算表示解释变量域中的响应变量的方差的平滑函数，以及表示解释变量领域中的响应变量的平均值的平滑函数，其基于针对每一个计算的平均值和方差 范围根据具体的分区候选确定。

公开(公告)号：US08210033B2

公开(公告)日：2012-07-03

申请号：US12721797

申请日：2010-03-11

申请人： Jungo Kondo ,  Keiji Matsuhiro ,  Kenji Aoki ,  Atsuo Kondo

发明人： Jungo Kondo ,  Keiji Matsuhiro ,  Kenji Aoki ,  Atsuo Kondo

IPC分类号： G01M15/10

CPC分类号： F01N9/002 ,  F01N2560/05 ,  F01N2560/12 ,  Y02T10/47

摘要： A device for detecting an accumulation amount of particulates is provided. The device has a filter for trapping particulates from a gas containing the particulates, a container for containing the filter, an upstream pipe provided on the upstream side of the container to lead the gas into the container, a downstream pipe provided on the downstream side of the container to lead the gas after passed through the filter, a transmitting antenna provided within the downstream pipe to transmit an electromagnetic wave having a frequency of 30 GHz or more but not exceeding 10 THz, and a receiving antenna provided within the upstream pipe to receive the electromagnetic wave. An amount of the particulates trapped in the filter is detected based on an intensity of the electromagnetic wave received by the receiving antenna.

摘要翻译： 提供了一种用于检测微粒堆积量的装置。 该装置具有用于捕集来自含有微粒的气体的微粒的过滤器，容纳过滤器的容器，设置在容器的上游侧的上游管，将气体导入容器内，下游管 在通过过滤器之后引导气体的容器，设置在下游管道内的发射天线，以传输频率为30GHz以上但不超过10THz的电磁波，以及设置在上游管内的接收天线，以接收 电磁波。 基于由接收天线接收的电磁波的强度来检测捕获在滤波器中的微粒量。

公开(公告)号：US07974501B2

公开(公告)日：2011-07-05

申请号：US12407904

申请日：2009-03-20

申请人： Akira Hamajima ,  Jungo Kondo ,  Osamu Mitomi ,  Tetsuya Ejiri ,  Kenji Aoki

发明人： Akira Hamajima ,  Jungo Kondo ,  Osamu Mitomi ,  Tetsuya Ejiri ,  Kenji Aoki

IPC分类号： G02B26/00 ,  G02F1/035

CPC分类号： G02F1/035 ,  G02B6/4202

摘要： An optical modulator 24 has a supporting substrate 5, a modulating substrate 11 made of an electro-optical material, an optical waveguide 12 provided on the side of a first main surface 30 of the modulating substrate 11, and an adhesion layer 6 adhering a second main surface 31 of the modulating substrate 11 onto the supporting substrate 5. The modulating substrate 11 has a high-frequency interaction portion 11c applying a voltage on the optical waveguide 12 to modulate propagating light, an incident portion 11a inputting light to the optical waveguide, and an outgoing portion 11b outputting light from the optical waveguide. The high-frequency interaction portion 11c is recessed on the first main surface 30 of the modulating substrate 11 with respect to the incident and outgoing portions 11a and 11b. The high-frequency interaction portion 11c has a thickness smaller than the those of the incident and outgoing portions 11a and 11b.

摘要翻译： 光调制器24具有支撑基板5，由电光材料制成的调制基板11，设置在调制基板11的第一主面30一侧的光波导12，以及粘接层 调制基板11的主表面31到支撑基板5上。调制基板11具有在光波导12上施加电压以调制传播光的高频相互作用部分11c，向光波导输入光的入射部分11a， 以及从光波导输出光的出射部分11b。 高频相互作用部分11c相对于入射和出射部分11a和11b凹入调制基板11的第一主表面30上。 高频相互作用部分11c的厚度小于入射部分11a和出射部分11b的厚度。

公开(公告)号：US20110157673A1

公开(公告)日：2011-06-30

申请号：US13022896

申请日：2011-02-08

申请人： Osamu MITOMI ,  Yasunori Iwasaki ,  Yuji Hori ,  Kenji Aoki ,  Jungo Kondo

发明人： Osamu MITOMI ,  Yasunori Iwasaki ,  Yuji Hori ,  Kenji Aoki ,  Jungo Kondo

IPC分类号： G02F1/01

CPC分类号： G02F1/2255

摘要： An optical modulator includes an optical modulation substrate, an electrical length adjusting substrate, a package containing the substrates, and a plurality of input ports for inputting high frequency electrical signals. The optical modulation substrate includes a substrate body made of an electro-optic material, a ground electrode and a plurality of signal electrodes provided on the substrate body, optical waveguides propagating lights interacting with the signal electrodes, respectively, and electrode input ports inputting the high frequency electrical signals into the signal electrodes, respectively. The signal electrode includes an interacting part, an input end part provided between the electrode input port and interacting part, and a terminal part. The electrical length adjusting substrate includes conductive lines connected to the input ports for inputting the high frequency electrical signals, respectively. The conductive lines have electrical lengths different from each other for adjusting the phase differences among the ports.

摘要翻译： 光调制器包括光调制基板，电长度调节基板，包含基板的封装以及用于输入高频电信号的多个输入端口。 光调制基板包括由电光材料制成的基板主体，接地电极和设置在基板主体上的多个信号电极，分别与信号电极相互作用的光波导传播光和输入高电平的电极输入端 频率电信号分别进入信号电极。 信号电极包括相互作用部分，设置在电极输入端口和相互作用部分之间的输入端部分和端子部分。 电长度调节基板包括分别连接到用于输入高频电信号的输入端口的导线。 导线具有彼此不同的电长度，用于调节端口之间的相位差。