摘要:
A vehicle light controller that facilitates recognition of a vehicle. The controller includes a portable device having a communication function. A lighting device is arranged in the vehicle and has a vehicle entering mode and a vehicle exiting mode with changeable lighting patterns. A first controller and a second controller are connected to the lighting device and communicate with the portable device. The first controller illuminates the lighting device in the vehicle entering mode when communication with the portable device is established and changes the lighting pattern of the lighting device in the vehicle entering mode when a first condition is satisfied. The second controller illuminates the lighting device in the vehicle exiting mode when communication with the portable device is established and a second condition is satisfied.
摘要:
A driving apparatus for an action toy comprising: a base member; a swing member (16) which is reciprocally swingable on a predetermined axis formed in the base member (10); an electromagnet (20) which is attached to one of the base member and the swing member; a control circuit (25) for controlling electric current supplied to the electromagnet; at least a magnetic material member (21, 22) which is attached to the other of the base member and the swing member to allow the swing member to swing reciprocally with respect to the base member by a magnetic force which acts between the electromagnet and the magnetic material member; and a ratchet mechanism (31, 32) for converting a swinging movement of the swing member to a rotational movement of a wheel, the ratchet mechanism comprising a ratchet pawl member (32) and ratchet teeth (31) engageable with the ratchet pawl member.
摘要:
A semiconductor memory includes a storage node (14), a capacitor dielectric film (15) selectively formed on the storage node (14), and a bit line cum cell plate (16) formed over a semiconductor substrate (10) including the capacitor dielectric film (15) on a bit line by bit line basis. Part of the bit line cum cell plate (16) is formed directly on a source/drain region (27), and a region in which the bit line cum cell plate 16 contacts the source/drain region (27) serves as a bit line contact. The bit line cum cell plate (16) is such that a bit line and a cell plate of a memory cell capacitor are integrally formed from a single interconnect layer. The semiconductor memory has a structure which achieves reduction in manufacturing costs. A method of manufacturing such a semiconductor memory is also provided.
摘要:
A disk drive includes a data recording disk and disk head for recording data and reproducing data from the disk. Arms support the disk head. An actuator drives the arm moving the disk head to a predetermined data recording track of the disk. A spindle motor rotates the disk. An actuator unit moves the disk head to select a track on the disk. First positioning data for positioning the disk head is provided on at least one data surface. Second positioning data is provided at at least one data surface. A control is coupled to the actuator for controlling the positioning of the disk head and the searching of the disk in response to the first and second positioning data. The second positioning data may be located on positioning tracks not used for data. The second positioning information as part of a second positioning data is stored. The disk head position is compensated by the stored second positioning information which is superimposed with the first position data.
摘要:
Compounds of the following formula are provided for use with kinases: wherein the variables are as defined herein. Also provided are pharmaceutical compositions, kits and articles of manufacture comprising such compounds; methods and intermediates useful for making the compounds; and methods of using said compounds.
摘要:
An object of the present invention is to provide a purification method of separating impurities from a carboxyl group-containing polyoxyethylene derivative having a molecular weight of 2,000 to 100,000.The purification method according to the invention includes the following steps.The polyoxyethylene derivative is dissolved to form a solution using toluene, xylene, benzene, ethyl acetate, or butyl acetate in an amount 5 times by mass or more the amount of the polyoxyethylene derivative. A slurry is formed by adding to the solution an inorganic adsorbent containing at least one of an oxide and a hydroxide of one or more elements selected from the group consisting of magnesium, silicon, and aluminum in an amount 0.5 to 10 times by mass the amount of the polyoxyethylene derivative. The slurry is stirred at a temperature of 25° C. or higher. Toluene, xylene, benzene, ethyl acetate, or butyl acetate is added to a filtration cake obtained by filtration of the slurry, and further filtration is performed. Methanol, ethanol, or 2-propanol is added to the filtration cake in an amount 5 times by mass or more the amount of the polyoxyethylene derivative, filtration is performed, and the polyoxyethylene derivative is recovered from the resulting filtrate.
摘要:
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a first isolation groove penetrating through a conductive film serving as the gate electrode to reach the semiconductor substrate. The method can include forming a protection film covering a side wall of the first isolation groove including a side face of the gate electrode. The method can include forming a second isolation groove by etching the semiconductor substrate exposed to a bottom surface of the first isolation groove. The method can include oxidizing an inner surface of the second isolation groove provided on each of both sides of the gate electrode to form first insulating films, which are connected to each other under the gate electrode. In addition, the method can include filling an inside of the first isolation groove and an inside of the second isolation groove with a second insulating film.
摘要:
According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.
摘要:
There is provided a heat processing furnace capable of quickly increasing and decreasing a temperature, while achieving improvement in durability. A heat processing furnace 2 comprises: a processing vessel 3 for accommodating an object to be processed w and performing thereto a heat process; and a cylindrical heater 5 disposed to surround an outer circumference of the processing vessel 3, for heating the object to be processed w. The heater 5 includes a cylindrical heat insulating member 16, and heating resistors 18 arranged along an inner circumferential surface of the heat insulating member 16. Each of the heating resistors 18 is formed of a strip-shaped member that is bent into a waveform having peak portions and trough portions. Pin members 20 are arranged in the heat insulating member 16 at suitable intervals therebetween, the pin members 20 holding the heating resistor 18 such that the heating resistor 18 is movable in a radial direction of the heater.