公开(公告)号：US20080265347A1

公开(公告)日：2008-10-30

申请号：US12108093

申请日：2008-04-23

申请人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

发明人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/08 ,  H01L27/222 ,  H01L43/12

摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.

摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。

公开(公告)号：US20080205126A1

公开(公告)日：2008-08-28

申请号：US12037425

申请日：2008-02-26

申请人： Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.

摘要翻译： 一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列 其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和 倪

公开(公告)号：US06984865B2

公开(公告)日：2006-01-10

申请号：US10847384

申请日：2004-05-18

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

摘要翻译： 关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层 磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择 至少相对于第一绝缘层和第二绝缘层。

公开(公告)号：US06947314B2

公开(公告)日：2005-09-20

申请号：US10671743

申请日：2003-09-29

申请人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/12 ,  G11C11/15

摘要： A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

摘要翻译： 用于在MTJ设备中写入信息的写入线覆盖有磁性层。 磁性层具有其中柱状晶体的生长方向从侧壁的法线方向为30°以下的结构，其中晶粒沉积成层的结构或其中晶粒被非晶态沉积的结构。

公开(公告)号：US08592928B2

公开(公告)日：2013-11-26

申请号：US13237586

申请日：2011-09-20

申请人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

发明人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

公开(公告)号：US20120068286A1

公开(公告)日：2012-03-22

申请号：US13237586

申请日：2011-09-20

申请人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

发明人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

IPC分类号： H01L29/82 ,  H01L21/20

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

公开(公告)号：US07564109B2

公开(公告)日：2009-07-21

申请号：US10917300

申请日：2004-08-13

申请人： Takeshi Kajiyama ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Masatoshi Yoshikawa

发明人： Takeshi Kajiyama ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00 ,  G11C11/14 ,  H01L21/8246

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And the device includes a magneto-resistance effect element provided on the first write wiring line.

摘要翻译： 磁存储器件包括：第一写入布线，其包括形成在绝缘层中的沟槽中的布线层;掩埋在布线层上的沟槽中的阻挡金属层。 并且该器件包括设置在第一写入布线上的磁阻效应元件。

公开(公告)号：US07262449B2

公开(公告)日：2007-08-28

申请号：US10847362

申请日：2004-05-18

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape different from that of the first magnetic layer and in which a magnetization state varies in accordance with write data, a non-magnetic layer which is arranged between the first magnetic layer and the second magnetic layer, and a third magnetic layer which surrounds the second magnetic layer.

摘要翻译： 根据本发明的一个方面的磁性随机存取存储器包括其中固定有磁化状态的第一磁性层，具有与第一磁性层的形状不同的磁化状态变化的第二磁性层 根据写入数据，布置在第一磁性层和第二磁性层之间的非磁性层和围绕第二磁性层的第三磁性层。

公开(公告)号：US20070164265A1

公开(公告)日：2007-07-19

申请号：US11563420

申请日：2006-11-27

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/04

CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293

摘要： A semiconductor memory device includes a first write line which is provided in a first direction, a first memory element which is connected to the first write line, a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line, a first insulation film which is provided on surfaces of the first and second memory elements, and a second insulation film which is provided between the neighboring first and second memory elements and has a lower heat conductivity than the first insulation film.

摘要翻译： 一种半导体存储器件，包括：沿第一方向设置的第一写入线，连接到第一写入线的第一存储器元件，设置成在第一方向上与第一存储元件相邻的第二存储元件， 连接到第一写入线，设置在第一和第二存储元件的表面上的第一绝缘膜，以及设置在相邻的第一和第二存储元件之间并且具有比第一绝缘体更低的热导率的第二绝缘膜 电影。

公开(公告)号：US07205564B2

公开(公告)日：2007-04-17

申请号：US10979327

申请日：2004-11-03

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/08 ,  G11C11/00

CPC分类号： H01L27/24 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/224 ,  H01L51/0062 ,  H01L51/0078

摘要： A resistance change memory includes a memory element, and a first organic semiconductor layer in contact with the memory element.

摘要翻译： 电阻变化存储器包括存储元件和与存储元件接触的第一有机半导体层。