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公开(公告)号：US20100102407A1
公开(公告)日：2010-04-29
申请号：US12556389
申请日：2009-09-09
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。
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公开(公告)号：US20100097846A1
公开(公告)日：2010-04-22
申请号：US12563465
申请日：2009-09-21
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： A magnetic memory includes an interlayer insulation layer provided on a substrate, a conductive underlying layer provided on the interlayer insulation layer, and a magnetoresistive element provided on the underlying layer and including two magnetic layers and a nonmagnetic layer interposed between the magnetic layers. The underlying layer has an etching rate lower than an etching rate of each of the magnetic layers.
摘要翻译： 磁存储器包括设置在基板上的层间绝缘层，设置在层间绝缘层上的导电性底层，以及设置在下层上的磁阻元件，并且包括两个磁性层和介于该磁性层之间的非磁性层。 下层具有比每个磁性层的蚀刻速率低的蚀刻速率。
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公开(公告)号：US07064402B2
公开(公告)日：2006-06-20
申请号：US11189851
申请日：2005-07-27
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.
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公开(公告)号：US20050259464A1
公开(公告)日：2005-11-24
申请号：US11189851
申请日：2005-07-27
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L27/105 , G11B5/33 , G11C11/14 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.
摘要翻译： 关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层 磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择 至少相对于第一绝缘层和第二绝缘层。
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公开(公告)号：US20050141148A1
公开(公告)日：2005-06-30
申请号：US11000093
申请日：2004-12-01
申请人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
发明人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
CPC分类号： G11B5/39
摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.
摘要翻译： 可以减小写入电流而不引起写入特性的波动。 磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向 存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。
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公开(公告)号：US08309950B2
公开(公告)日：2012-11-13
申请号：US12700536
申请日：2010-02-04
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion on a channel region between the source/drain regions. Third semiconductor layers are on the first portions of the second semiconductor layer. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. Contact plugs are in the first semiconductor layers, the first portions of the second semiconductor layers and the third semiconductor layers in the source/drain regions. A diameter of the contact plug in the second semiconductor layer is smaller than a diameter of the contact plug in the first and third semiconductor layers.
摘要翻译： 第一半导体层位于半导体衬底上的源/漏区中。 第二半导体层包括第一半导体层上的第一部分和源/漏区之间的沟道区上的第二部分。 第三半导体层位于第二半导体层的第一部分上。 栅电极经由绝缘膜在第二半导体层的第二部分周围。 接触插塞位于第一半导体层中，第二半导体层的第一部分和源/漏区中的第三半导体层。 第二半导体层中的接触插塞的直径小于第一和第三半导体层中的接触插塞的直径。
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公开(公告)号：US08081505B2
公开(公告)日：2011-12-20
申请号：US12556389
申请日：2009-09-09
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。
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公开(公告)号：US07919826B2
公开(公告)日：2011-04-05
申请号：US12108093
申请日：2008-04-23
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , H01L27/222 , H01L43/12
摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。
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公开(公告)号：US20080308887A1
公开(公告)日：2008-12-18
申请号：US11943831
申请日：2007-11-21
申请人： Yoshiaki Asao , Takeshi Kajiyama
发明人： Yoshiaki Asao , Takeshi Kajiyama
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/79 , H01L27/228 , H01L27/24
摘要： A semiconductor memory device includes first to third wiring layers formed above a semiconductor substrate, extending in a first direction, and sequentially arranged in a second direction perpendicular to the first direction, a plurality of active areas formed in the semiconductor substrate, and extending in a direction oblique to the first direction, first and second selection transistors formed in each of the active areas, and sharing a source region electrically connected to the second wiring layer, a first magnetoresistive element having one terminal electrically connected to a drain region of the first selection transistor, and the other terminal electrically connected to the first wiring layer, and a second magnetoresistive element having one terminal electrically connected to a drain region of the second selection transistor, and the other terminal electrically connected to the third wiring layer.
摘要翻译： 半导体存储器件包括形成在半导体衬底上的第一至第三布线层，沿第一方向延伸，并且沿垂直于第一方向的第二方向依次布置;形成在半导体衬底中的多个有源区， 形成在每个有源区中的第一和第二选择晶体管，并且共用与第二布线层电连接的源极区;第一磁阻元件，具有与第一选择区的漏极区域电连接的一个端子 晶体管，另一个端子电连接到第一布线层，以及第二磁阻元件，其具有一个端子电连接到第二选择晶体管的漏极区域，另一个端子电连接到第三布线层。
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公开(公告)号：US20080265347A1
公开(公告)日：2008-10-30
申请号：US12108093
申请日：2008-04-23
CPC分类号： H01L43/08 , H01L27/222 , H01L43/12
摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。
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