公开(公告)号：US07794915B2

公开(公告)日：2010-09-14

申请号：US11902775

申请日：2007-09-25

申请人： Tadahiro Sunaga ,  Yuichi Okawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

发明人： Tadahiro Sunaga ,  Yuichi Okawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

IPC分类号： G03F7/004 ,  G03F7/30 ,  C08F232/08

CPC分类号： G03F7/0395 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/142 ,  C08G2261/1426 ,  C08G2261/3325 ,  C08G2261/3342 ,  C08G2261/418 ,  C08G2261/72 ,  G03F7/0397 ,  Y10S430/106

摘要： Provided is a resin having an alicyclic structure in a main chain, which is excellent in etching resistance and developing property, a resist composition for exposure with a high energy radiation using the resin, and a method for forming a pattern using the resist composition.Also provided is a hydrogenated ring-opening metathesis polymer which is comprised of alicyclic skeleton-containing structural units [A], [B] and a structural unit [C] selected from the following general formula [5] and/or [6]: wherein, e and f represent respectively an integer of 0 to 3, wherein the at least one of X1 of the general formula [1] of the structural unit [A], X2 of the general formula [3] and X3 of the general formula [4] of the structural unit [B] is —O—, and wherein the molar ratio of the structural units [A], [B] and [C] satisfies simultaneously that [A]/([B]+[C]) is from 20/80 to 98/2, ([A]+[B])/[C] is from 99/1 to 50/50, and ([A]+[C])/[B] is from 99/1 to 21/79. Also, a resist composition comprising the same and a method for forming a pattern are provided.

摘要翻译： 本发明提供一种具有优异的耐蚀刻性和显影性的主链中具有脂环结构的树脂，使用该树脂用高能量辐射曝光的抗蚀剂组合物，以及使用该抗蚀剂组合物形成图案的方法。 还提供了一种氢化开环易位聚合物，其由含脂环骨架的结构单元[A]，[B]和选自以下通式[5]和/或[6]的结构单元[C]组成： 其中，e和f分别表示0〜3的整数，式中结构单元[A]的通式[1]的X1，通式[3]的X2和通式 结构单元[B]的[4]为-O-，其中结构单元[A]，[B]和[C]的摩尔比同时满足[A] /（[B] + [C] ）为20/80〜98/2，（[A] + [B]）/ [C]为99/1〜50/50，（[A] + [C]）/ [B] 99/1至21/79。 此外，提供了包含该抗蚀剂组合物的抗蚀剂组合物和形成图案的方法。

公开(公告)号：US07727704B2

公开(公告)日：2010-06-01

申请号：US11773706

申请日：2007-07-05

申请人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

发明人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

公开(公告)号：US20100097866A1

公开(公告)日：2010-04-22

申请号：US12555029

申请日：2009-09-08

申请人： Tomohiro Kobayashi

发明人： Tomohiro Kobayashi

IPC分类号： G11C7/06 ,  G11C7/02 ,  G11C7/00

CPC分类号： G11C7/14 ,  G11C7/065 ,  G11C17/12

摘要： A semiconductor memory device includes a memory cell array provided with a main memory cell array including a plurality of memory cells, and a dummy column including a plurality of dummy memory cells, a dummy readout current control section configured to control a current value of a dummy readout current of the dummy memory cell in such a manner that the current value becomes between the current values of the readout currents in first and second states of the memory cell, and a sense section provided with a sense amplifier configured to receive a readout current in one of the first and second states, or dummy readout current as an input, comparing these currents with each other, and outputting the currents.

摘要翻译： 一种半导体存储器件，包括设置有包括多个存储单元的主存储单元阵列的存储单元阵列和包括多个虚拟存储单元的虚拟列，虚设读出电流控制部，被配置为控制虚拟的当前值 该虚拟存储单元的读出电流使得当前值在存储单元的第一和第二状态中的读出电流的当前值之间变化，以及设置有读出放大器的感测部分，该读出放大器被配置为接收读出电流 第一状态和第二状态之一，或虚拟读出电流作为输入，将这些电流彼此进行比较，并输出电流。

公开(公告)号：US07691561B2

公开(公告)日：2010-04-06

申请号：US11773656

申请日：2007-07-05

申请人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

发明人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

CPC分类号： G03F7/0397 ,  Y10S430/108 ,  Y10S430/111

摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X 1是O，S或CH 2 CH 2，X 2是O，S，CH 2或CH 2 CH 2，n是1或2，a和b各自为0.01至少 1，c，d1和d2各自为0至小于1，a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

公开(公告)号：US20090246686A1

公开(公告)日：2009-10-01

申请号：US12411206

申请日：2009-03-25

申请人： Takeru WATANABE ,  Takeshi Kinsho ,  Tomohiro Kobayashi ,  Tadahiro Sunaga ,  Yuichi Okawa ,  Hirofumi Io

发明人： Takeru WATANABE ,  Takeshi Kinsho ,  Tomohiro Kobayashi ,  Tadahiro Sunaga ,  Yuichi Okawa ,  Hirofumi Io

IPC分类号： G03F7/004 ,  C08F283/01 ,  G03F7/20

CPC分类号： C08F283/01 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/143

摘要： A polymer having a rate of dissolution in an alkaline developer that increases under the action of acid is provided. The polymer is prepared by reacting a hydrogenated ROMP polymer with an O-alkylating agent in the presence of a base.

摘要翻译： 提供了在酸作用下在碱性显影剂中溶解速率增加的聚合物。 聚合物通过在碱存在下使氢化ROMP聚合物与O-烷基化剂反应来制备。

公开(公告)号：US20090010085A1

公开(公告)日：2009-01-08

申请号：US12165720

申请日：2008-07-01

申请人： Takehiko Hojo ,  Tomohiro Kobayashi ,  Tetsuya Amano

发明人： Takehiko Hojo ,  Tomohiro Kobayashi ,  Tetsuya Amano

IPC分类号： G11C29/00 ,  G11C17/16

CPC分类号： G11C17/18 ,  G11C17/16 ,  G11C17/165 ,  G11C29/027 ,  G11C29/785 ,  G11C29/802

摘要： A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.

摘要翻译： 半导体集成电路器件包括第一熔丝电路，第二熔丝电路和控制信号发生电路，其发送第一控制信号并执行程序，使得第一熔丝电路的电阻值变得大于第二熔丝电路的电阻值 熔丝电路，并发送第二控制信号并执行重新编程，使得第二熔丝电路的电阻值变得大于第一熔丝电路的电阻值。

公开(公告)号：US20080153030A1

公开(公告)日：2008-06-26

申请号：US12000284

申请日：2007-12-11

申请人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

发明人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

IPC分类号： G03F7/039 ,  G03F7/26

CPC分类号： G03F7/0397 ,  G03F7/0045

摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).

摘要翻译： 公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光的高能束作为光源显着提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。 正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。

公开(公告)号：US07334239B2

公开(公告)日：2008-02-19

申请号：US11083958

申请日：2005-03-21

申请人： Tomohiro Kobayashi

发明人： Tomohiro Kobayashi

IPC分类号： G11B17/04

CPC分类号： G11B17/05

摘要： In an optical disc apparatus, a harsh blow sound due to collision of first stoppers of a tray and third stoppers of a main chassis when the tray reaches to a terminal position of drawing thereof is reduced. When a second stopper of the tray contacts with the front end portion of a cam slider, the front end portion of the cam slider is elastically deformed so that moving speed of the tray is largely decelerated. Consequently, the blow sound due to contact of the first stoppers of the tray and the third stoppers of the main chassis is radically reduced.

摘要翻译： 在光盘装置中，当托盘到达其绘图的终端位置时，由于托盘的第一挡块和主底板的第三挡块的碰撞引起的剧烈的吹奏声音减少。 当托盘的第二止动件与凸轮滑块的前端部接触时，凸轮滑块的前端部弹性变形，使得托盘的移动速度大大减速。 因此，由于托盘的第一挡块和主机架的第三挡块的接触引起的吹奏声音被大幅减少。

公开(公告)号：US20050058938A1

公开(公告)日：2005-03-17

申请号：US10936753

申请日：2004-09-09

申请人： Seiichiro Tachibana ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

发明人： Seiichiro Tachibana ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

IPC分类号： G03C1/76 ,  G03F7/039

CPC分类号： G03F7/0397 ,  Y10S430/111

摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.

摘要翻译： 包含式（1）至（4）的重复单元的聚合物，其中R 1，R 3，R 4和R 7为氢或甲基，R 2为酸不稳定基团，R 5和R 6是氢或羟基，R 8是内酯结构基团，其Mw为1,000-50,000。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。

公开(公告)号：US06667145B1

公开(公告)日：2003-12-23

申请号：US09694369

申请日：2000-10-24

申请人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

发明人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

IPC分类号： G03C173

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.

摘要翻译： 抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物，其Mw为1,000-500,000.R 1是H，甲基或CO 2 R 2，R 2是烷基，R 3是 H，甲基或CH 2 CO 2 R 2，R 4至R 7中的至少一个是含羧基或羟基的一价烃基，并且提醒独立地为H或烷基，R 8， R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基，并且提醒独立地是H或烷基，R 12是多环烃基或含有这种多环的烷基 烃基，R 13是酸不稳定基团，Z是构成其中含有羧酸酯，碳酸酯或酸酐的5-或6-元环的二价原子基团，k是0或1，x是 数字从0到1，“a”到“d”从0到小于1，x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率，基底粘附性和耐蚀刻性，并且在精确微细加工中非常有用。