公开(公告)号：US20060228492A1

公开(公告)日：2006-10-12

申请号：US11100610

申请日：2005-04-07

申请人： Yoshiro Aoki ,  Mitsuru Sudo ,  Tetsuya Nakai

发明人： Yoshiro Aoki ,  Mitsuru Sudo ,  Tetsuya Nakai

IPC分类号： C23C14/00 ,  B05D3/02

CPC分类号： C23C8/80 ,  C23C8/12 ,  C23C14/48 ,  C30B29/06 ,  C30B33/005 ,  H01L21/76243

摘要： In the method for manufacturing a SIMOX wafer, oxygen ions are implanted into a silicon wafer, then the silicon wafer is subjected to a prescribed heat treatment so as to form a buried oxide layer in the silicon wafer. The prescribed heat treatment includes: a step of ramping up a temperature of the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%; either or both of a step of oxidizing the silicon wafer in a high oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of 5% or more and a step of annealing the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%; and a step of ramping down the temperature of the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%. A hydrogen chloride gas is mixed with the low oxygen partial pressure gas having an oxygen partial pressure ratio of less than 5% in at least one step from among the ramp-up step, the anneal step and the ramp-down step.

摘要翻译： 在制造SIMOX晶片的方法中，将氧离子注入到硅晶片中，然后对硅晶片进行规定的热处理，以在硅晶片中形成掩埋氧化物层。 规定的热处理包括：在氧分压比小于5％的低氧分压气氛中升高硅晶片的温度的步骤; 在氧分压比为5％以上的高氧分压气氛中氧化硅晶片的步骤中的一个或两个，以及在具有氧部分的低氧分压气氛中退火硅晶片的步骤 压力比小于5％; 以及在氧分压比小于5％的低氧分压气体气氛中降低硅晶片的温度的步骤。 从斜坡上升步骤，退火步骤和斜坡下降步骤至少一个步骤，将氯化氢气体与氧分压比小于5％的低氧分压气体混合。

公开(公告)号：US20060221011A1

公开(公告)日：2006-10-05

申请号：US11386748

申请日：2006-03-23

申请人： Yoshiro Aoki

发明人： Yoshiro Aoki

IPC分类号： G09G3/30

CPC分类号： G09G3/325 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/061 ,  G09G2320/0223 ,  G09G2320/0233 ,  H01L27/3244

摘要： A display executes a first reset operation during a blanking period, and second and third reset operations and a write operation during each selection period. The first reset operation includes connecting a current source to a precharge circuit and writing a first reset signal into the precharge circuit. The second reset operation includes connecting the current source to a drive circuit of a pixel and writing a second reset signal into the drive circuit to set a potential of a video signal line at a first potential. The third reset operation includes disconnecting the video signal line from the current source and making the precharge circuit output a reset current to the video signal line for a given length of time to shift the potential of the video signal line from the first potential to a second potential.

摘要翻译： 显示器在消隐期间执行第一复位操作，以及在每个选择周期期间执行第二和第三复位操作和写入操作。 第一复位操作包括将电流源连接到预充电电路并将第一复位信号写入预充电电路。 第二复位操作包括将电流源连接到像素的驱动电路并将第二复位信号写入驱动电路，以将视频信号线的电位设置在第一电位。 第三复位操作包括将视频信号线与电流源断开，并且使预充电电路在视频信号线上输出给定时间长度的复位电流，以将视频信号线的电位从第一电位移位到第二电位 潜在。

公开(公告)号：US20060220577A1

公开(公告)日：2006-10-05

申请号：US11386710

申请日：2006-03-23

申请人： Yoshiro Aoki

发明人： Yoshiro Aoki

IPC分类号： G09G3/10

CPC分类号： G09G3/3283 ,  G09G3/3233 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/0251 ,  G09G2320/0233

摘要： A display sequentially executes first and second operations during a write period. The first operation includes making a first constant-current flow through a video signal line while connecting a first terminal of a drive control element to a power supply terminal connecting a second terminal and control terminal of the drive control element to the video signal line. The second operation includes making a second constant-current flow through the video signal line in a flow direction of the first constant-current while breaking a connection between the first terminal and the power supply terminal and/or a connection between the second terminal and the control terminal and connecting the control terminal to the video signal line. The display causes a difference between grayscale levels by changing a time period during which the second constant-current flows through the video signal line.

摘要翻译： 显示器在写入期间依次执行第一和第二操作。 第一操作包括在将驱动控制元件的第一端子连接到将驱动控制元件的第二端子和控制端子连接到视频信号线的电源端子之间通过视频信号线进行第一恒定电流流动。 第二操作包括在断开第一端子和电源端子之间的连接的同时在第一恒定电流的流动方向上使第二恒定电流流过视频信号线和/或第二端子与 控制端子并将控制端子连接到视频信号线。 显示器通过改变第二恒定电流流过视频信号线的时间段而导致灰度级之间的差异。

公开(公告)号：US20060202919A1

公开(公告)日：2006-09-14

申请号：US11341484

申请日：2006-01-30

申请人： Yoshiro Aoki ,  Hirondo Nakatogawa

发明人： Yoshiro Aoki ,  Hirondo Nakatogawa

IPC分类号： G09G3/30

CPC分类号： G09G3/325 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/0271

摘要： A display includes pixels arrange in a matrix. Each pixel includes a display element, a first drive current control circuit which is supplied with a first video signal and outputs a first drive current to the display element at magnitude corresponding to magnitude of the first video signal, and a second drive current control circuit which is supplied with a second video signal and outputs a second drive current to the display element at magnitude corresponding to magnitude of the second video signal. The display can set a ratio T1/T2 larger than 1, wherein T1 represents a time period over which the first drive current control circuit can output the first drive current to the display element, and T2 represents a time period over which the second drive current control circuit can output the second drive current to the display element.

摘要翻译： 显示器包括排列成矩阵的像素。 每个像素包括显示元件，被提供有第一视频信号的第一驱动电流控制电路，并且以对应于第一视频信号幅度的幅度输出到显示元件的第一驱动电流;以及第二驱动电流控制电路， 被提供有第二视频信号，并且以对应于第二视频信号的幅度的幅度向显示元件输出第二驱动电流。 显示器可以设定大于1的比率T 1 / T 2，其中T 1表示第一驱动电流控制电路能够向显示元件输出第一驱动电流的时间段，T 2表示一个时间段， 第二驱动电流控制电路可以将第二驱动电流输出到显示元件。

公开(公告)号：US20060066536A1

公开(公告)日：2006-03-30

申请号：US11270695

申请日：2005-11-10

申请人： Masuyuki Ota ,  Yoshiro Aoki

发明人： Masuyuki Ota ,  Yoshiro Aoki

IPC分类号： G09G3/30

CPC分类号： G09G3/325 ,  G09G3/3241 ,  G09G3/3283 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/0262 ,  G09G2310/0297 ,  G09G2320/0223

摘要： An active matrix display device comprises a plurality of pixels which are arranged in the form of a matrix on a substrate and each of which includes a display element and a pixel circuit which supplies the display element with a drive current, video signal lines arranged along the pixels, and a video signal driver which, after the supply of base currents to the video signal lines, supplies the pixels with gradation currents through the video signal lines. The pixel circuit includes a pixel switch which controls whether or not to select the pixel, stores the difference current between the gradation and base currents when the pixel is selected and outputs the stored difference current to the display element as the drive current when the pixel is nonselected.

摘要翻译： 有源矩阵显示装置包括以矩阵形式布置在基板上的多个像素，每个像素包括显示元件和向显示元件提供驱动电流的像素电路，沿着 以及视频信号驱动器，其在向视频信号线提供基极电流之后，通过视频信号线向像素提供灰度电流。 像素电路包括：像素开关，其控制是否选择像素;当选择像素时，存储灰度级和基极电流之间的差电流，并将存储的差分电流输出到显示元件作为像素为的驱动电流 非选择

公开(公告)号：US06828726B2

公开(公告)日：2004-12-07

申请号：US09981888

申请日：2001-10-19

申请人： Hiroyuki Sakurai ,  Michiya Kobayashi ,  Norihiko Kamiura ,  Yoshiro Aoki

发明人： Hiroyuki Sakurai ,  Michiya Kobayashi ,  Norihiko Kamiura ,  Yoshiro Aoki

IPC分类号： H01J6304

CPC分类号： H01L27/3248 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5271

摘要： An organic EL display device comprises an organic EL element PX in which a self light-emitting layer is held between an anode and a cathode, and a pixel switch SW′ for pixels formed of the organic EL element PX. Particularly, the pixel switch SW′ includes a source electrode and a drain electrode which is formed together with the anode on an interlayer insulating film so as to reflect the light laterally emitted from the self light-emitting layer.

摘要翻译： 有机EL显示装置包括其中自发光层保持在阳极和阴极之间的有机EL元件PX和用于由有机EL元件PX形成的像素的像素开关SW'。 特别地，像素开关SW'包括在层间绝缘膜上与阳极一起形成的源电极和漏电极，以便反射从自发光层横向发射的光。

公开(公告)号：US08293070B2

公开(公告)日：2012-10-23

申请号：US12402584

申请日：2009-03-12

申请人： Yoshiro Aoki

发明人： Yoshiro Aoki

IPC分类号： C23C16/00

CPC分类号： C23C14/48 ,  C23C14/541

摘要： In oxygen ion implantation equipment, a chamber has a bottom wall on one end face thereof and is open in the other end face thereof. A wafer holder rotatably holding a plurality of wafers on the same circumference of a circle is housed in the chamber. Inside a cap closing an opening of the chamber while making the chamber airtight with a sealing member, a coolant passage is formed near the sealing member. A plurality of lamp heaters are disposed so as to extend in the direction of the tangent to the circumference of the cap and align parallel to the direction of the radius of the cap, in such a way as to face one wafer held by the wafer holder. When the plurality of lamp heaters are divided into inner lamps located on the inner side of the cap in the direction of the radius thereof and outer lamps located on the outer side of the cap in the direction of the radius thereof, the amount of heat applied to the wafer per unit time by the outer lamps is made larger than the amount of heat applied to the wafer per unit time by the inner lamps.

摘要翻译： 在氧离子注入设备中，室的一端面具有底壁，在其另一端面开口。 将可旋转地保持在圆周的同一圆周上的多个晶片的晶片保持器容纳在该室中。 在封闭室的开口的盖中，同时使密封件与密封件密封，在密封构件附近形成冷却剂通道。 多个灯加热器被设置成沿着盖的圆周的切线方向延伸，并且平行于盖的半径方向对齐，以便面对由晶片保持架保持的一个晶片 。 当多个灯加热器在其半径方向上划分为位于盖的内侧的内灯和位于帽的外侧的外灯在其半径方向上时，施加的热量 由外灯每单位时间到晶片的制造量大于由内灯每单位时间施加到晶片的热量。

公开(公告)号：US20120081499A1

公开(公告)日：2012-04-05

申请号：US13185383

申请日：2011-07-18

申请人： Takanori TSUNASHIMA ,  Yoshiro Aoki

发明人： Takanori TSUNASHIMA ,  Yoshiro Aoki

IPC分类号： B41J2/435

CPC分类号： B41J2/45

摘要： According to one embodiment, a print head includes first and second substrates, an OLED array and a drive circuit. The first substrate extending in a first direction and has a main surface including first to third regions. The first region extends in the first direction. The second and third regions are arranged in a second direction crossing the first direction with the first region interposed between the second and third regions. The OLED array includes first electrodes arranged above the first region, an organic emitting layer positioned above the first electrodes, and a second electrode positioned above the organic emitting layer. The drive circuit is configured to supply drive currents to the first electrodes and includes a first circuit positioned above the third region and a second circuit positioned above the third region.

摘要翻译： 根据一个实施例，打印头包括第一和第二基板，OLED阵列和驱动电路。 所述第一基板沿第一方向延伸并且具有包括第一至第三区域的主表面。 第一区域沿第一方向延伸。 第二和第三区域布置在与第一方向交叉的第二方向上，第一区域介于第二和第三区域之间。 OLED阵列包括布置在第一区域上方的第一电极，位于第一电极上方的有机发光层和位于有机发光层上方的第二电极。 驱动电路被配置为向第一电极提供驱动电流并且包括位于第三区域上方的第一电路和位于第三区域上方的第二电路。

公开(公告)号：US08008638B2

公开(公告)日：2011-08-30

申请号：US12496836

申请日：2009-07-02

申请人： Yoshiro Aoki

发明人： Yoshiro Aoki

IPC分类号： G21K5/10

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/2007 ,  H01J2237/20214

摘要： This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in regions where there is partial overlap of its circumference. The holding devise turns and inclines the wafer, and also holds the wafer by three or more holding pins. The side face of the holding pin has an inversely tapered shape, and the multiple holding pins include a first holding pin whose protrusion amount is relatively small, and a second holding pin whose protrusion amount is relatively large. The holding pin which is on the upper side from the center of the wafer in the planar direction of the inclined wafer is the second holding pin, and the angle of inclination of the side face of the second holding pin at a position where ions are implanted into the wafer has an angular degree which is equal to or less than an angle of incidence of the ion beam relative to the wafer.

摘要翻译： 该离子注入装置设置有保持晶片的保持装置，并且沿其圆周转动。 除了将晶片保持在规定位置之外，离子注入装置使晶片在其周边部分重叠的区域中进行离子注入。 保持装置转动并倾斜晶片，并且还通过三个或更多个保持销保持晶片。 保持销的侧面具有倒锥形状，多个保持销包括突出量相对较小的第一保持销和突出量相对较大的第二保持销。 在倾斜晶片的平面方向上位于晶片中心的上侧的保持销是第二保持销，并且第二保持销的侧面在离子被植入的位置处的倾斜角 进入晶片的角度等于或小于离子束相对于晶片的入射角。

公开(公告)号：US07727867B2

公开(公告)日：2010-06-01

申请号：US11677282

申请日：2007-02-21

申请人： Yoshiro Aoki ,  Bong-Gyun Ko

发明人： Yoshiro Aoki ,  Bong-Gyun Ko

IPC分类号： H01L21/425

CPC分类号： H01L21/76243

摘要： A MLD-SIMOX wafer is obtained by forming a first ion-implanted layer in a silicon wafer; forming a second ion-implanted layer that is in an amorphous state; and subjecting the wafer to a high-temperature heat treatment to maintain the wafer in an atmosphere containing oxygen at a temperature that is not lower than 1300° C. but lower than a silicon melting point to change the first and the second ion-implanted layers into a BOX layer, wherein the dose amount for the first ion-implanted layer is 1.25 to 1.5×1017 atoms/cm2, the dose amount for the second ion-implanted layer is 1.0×1014 to 1×1016 atoms/cm2, the wafer is preheated to a temperature of 50° C. to 200° C. before forming the second ion-implanted layer, and the second ion-implanted layer is formed in a state where it is continuously heated to a preheating temperature.

摘要翻译： 通过在硅晶片中形成第一离子注入层来获得MLD-SIMOX晶片; 形成处于非晶状态的第二离子注入层; 并对该晶片进行高温热处理，将晶片保持在不低于1300℃但低于硅熔点的温度的氧气氛中，以改变第一和第二离子注入层 其中第一离子注入层的剂量为1.25〜1.5×10 17原子/ cm 2，第二离子注入层的剂量为1.0×10 14〜1×10 16原子/ cm 2，晶片 在形成第二离子注入层之前预热到50℃至200℃的温度，并且第二离子注入层在其被连续加热到预热温度的状态下形成。