Cleaning composition, cleaning process, and process for producing semiconductor device
    35.
    发明授权
    Cleaning composition, cleaning process, and process for producing semiconductor device 有权
    清洁组合物,清洁工艺和半导体器件的制造工艺

    公开(公告)号:US08669217B2

    公开(公告)日:2014-03-11

    申请号:US13050666

    申请日:2011-03-17

    IPC分类号: C11D7/50 C11D11/00

    摘要: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.

    摘要翻译: 提供一种清洗方法,其包括制备含有57〜95重量%的(a成分)水,1〜40重量%的(成分b)含羟基和/或叔羟基的 羟基化合物,(组分c)有机酸和(组分d)季铵化合物,该组合物的pH为5〜10,以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤 。 还提供了一种半导体器件的制造方法,该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤,以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物, (成分a)的水,1〜40重量%的(成分b)含羟基和/或叔羟基的羟基化合物,(成分c)有机酸和(成分d)季铵 化合物,该组合物的pH为5〜10。

    CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    36.
    发明申请
    CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 有权
    清洁组合物,清洁工艺和生产半导体器件的方法

    公开(公告)号:US20110237480A1

    公开(公告)日:2011-09-29

    申请号:US13050666

    申请日:2011-03-17

    IPC分类号: C11D7/60

    摘要: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.

    摘要翻译: 提供一种清洗方法,其包括制备含有57〜95重量%的(a成分)水,1〜40重量%的(成分b)含羟基和/或叔羟基的 羟基化合物,(组分c)有机酸和(组分d)季铵化合物,该组合物的pH为5〜10,以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤 。 还提供了一种半导体器件的制造方法,该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤,以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洁组合物,该清洁组合物含有57〜95重量% (成分a)的水,1〜40重量%的(成分b)含羟基和/或叔羟基的羟基化合物,(成分c)有机酸和(成分d)季铵 化合物,该组合物的pH为5〜10。

    Ceramic filter
    38.
    发明申请
    Ceramic filter 有权
    陶瓷过滤器

    公开(公告)号:US20060213165A1

    公开(公告)日:2006-09-28

    申请号:US11375089

    申请日:2006-03-14

    IPC分类号: B01D46/00

    摘要: A ceramic filter has (A) a base body having partition walls made of a ceramic porous body, wherein cells 18 are defined by the partition walls, (B) filer membranes provided on the partition walls, made of a ceramic porous body having an average pore diameter smaller than that of the surface of each partition wall, and (C) a glass seal provided so as to cover at least the end face of the base body, wherein the glass seal is constituted by an alkali-free glass containing silica (SiO2) in an amount of 55 to 65 mol %, zirconia (ZrO2) in an amount of 1 to 10 mol % and at least one kind of alkaline earth metal oxide selected from calcia, baria and strontia but substantially not containing zinc oxide.

    摘要翻译: 陶瓷过滤器具有(A)具有由陶瓷多孔体制成的隔壁的基体,其中单元18由隔壁限定,(B)设置在隔壁上的由具有平均值的陶瓷多孔体制成的隔膜 孔径小于每个分隔壁的表面,以及(C)玻璃密封件,其设置成至少覆盖基体的端面,其中玻璃密封件由含有二氧化硅的无碱玻璃( SiO 2)为55〜65摩尔%,氧化锆(ZrO 2)为1〜10摩尔%,以及至少一种碱土金属氧化物,其选自钙,钡和锶,但基本上不含氧化锌。