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公开(公告)号:US07872838B2
公开(公告)日:2011-01-18
申请号:US11704399
申请日:2007-02-09
申请人: Kunliang Zhang , Min Li , Yu-Hsia Chen
发明人: Kunliang Zhang , Min Li , Yu-Hsia Chen
IPC分类号: G11B5/127
CPC分类号: G11B5/398 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/3983 , Y10T428/1121
摘要: Improved performance uniformity among CPP magnetic read devices that include an oxide barrier has been achieved by fabricating the oxide layer from at least two separately formed CCP layers. Each CCP layer is given its own PIT and IAO treatment which is of shorter duration than the PIT/IAO treatment that is used when only a single CCP layer is formed.
摘要翻译: 通过从至少两个单独形成的CCP层制造氧化物层,已经实现了包括氧化物屏障的CPP磁读取装置之间的改进的性能均匀性。 给每个CCP层提供自己的PIT和IAO处理,其持续时间比仅在形成单个CCP层时使用的PIT / IAO处理更短。
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公开(公告)号:US07610674B2
公开(公告)日:2009-11-03
申请号:US11352676
申请日:2006-02-13
申请人: Kunliang Zhang , Daniel G Abels , Min Li , Yu-Hsia Chen
发明人: Kunliang Zhang , Daniel G Abels , Min Li , Yu-Hsia Chen
CPC分类号: G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要: Concerns about inadequate electromigration robustness in CCP CPP GMR devices have been overcome by adding magnesium to the current confining structures that are presently in use. In one embodiment the alumina layer, in which the current carrying copper regions are embedded, is fully replaced by a magnesia layer. In other embodiments, alumina is still used but a layer of magnesium is included within the structure before it is subjected to ion assisted oxidation.
摘要翻译: 通过向当前使用的当前限制结构添加镁,克服了对CCP CPP GMR器件的电迁移鲁棒性不足的担忧。 在一个实施例中,其中载流电铜区域的氧化铝层被氧化镁层完全替代。 在其它实施方案中,仍然使用氧化铝,但在进行离子辅助氧化之前,该结构中包含一层镁。
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公开(公告)号:US07352543B2
公开(公告)日:2008-04-01
申请号:US11043624
申请日:2005-01-26
申请人: Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
发明人: Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
IPC分类号: G11B5/33
CPC分类号: G11B5/39
摘要: The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
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公开(公告)号:US07288281B2
公开(公告)日:2007-10-30
申请号:US10933031
申请日:2004-09-02
申请人: Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
发明人: Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号: B05D5/12
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要: Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.
摘要翻译: FeFe CoFe可用于AP1,以提高CPP GMR。 然而,这被发现降低了器件的电迁移性能。 通过使用作为多层CoFe(25%)层的层叠体的AP1,通过铜层彼此分离,解决了该问题。 然后在所有铜 - 钴Fe界面上插入超薄的富铁CoFe层。
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公开(公告)号:US20070188936A1
公开(公告)日:2007-08-16
申请号:US11352676
申请日:2006-02-13
申请人: Kunliang Zhang , Daniel Abels , Min Li , Yu-Hsia Chen
发明人: Kunliang Zhang , Daniel Abels , Min Li , Yu-Hsia Chen
CPC分类号: G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要: Concerns about inadequate electromigration robustness in CCP CPP GMR devices have been overcome by adding magnesium to the current confining structures that are presently in use. In one embodiment the alumina layer, in which the current carrying copper regions are embedded, is fully replaced by a magnesia layer. In other embodiments, alumina is still used but a layer of magnesium is included within the structure before it is subjected to ion assisted oxidation.
摘要翻译: 通过向当前使用的当前限制结构添加镁,克服了对CCP CPP GMR器件的电迁移鲁棒性不足的担忧。 在一个实施例中,其中载流电铜区域的氧化铝层被氧化镁层完全替代。 在其它实施方案中,仍然使用氧化铝,但在进行离子辅助氧化之前,该结构中包含一层镁。
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公开(公告)号:US20070070556A1
公开(公告)日:2007-03-29
申请号:US11234719
申请日:2005-09-23
申请人: Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
发明人: Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
CPC分类号: H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/16 , H01F10/3236 , H01F10/3259 , H01F10/3272 , H01F41/302
摘要: A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.
摘要翻译: 公开了一种具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀,其中AP2部分是具有由Co< Z> Fe(100)表示的组成的FCC状三层 -Z)/ Fe(100-X)Ta x / Co Z(Fe)(100-Z) (100-Z)/(C-1)(100-Y)/ (100-Z)其中x为3至30原子%,y为40至100原子%,z为75至100原子%。 优选地,z为90以提供使电迁移最小化的面心立方结构。 任选地,中间层由富Fe合金如FeCr,FeV,FeW,FeZr,FeNb,FeHf或FeMo组成。 与具有常规AP 2 Co 50 Fe 5 O 5或Co 75 Fe 2 O 5的自旋阀相比,EM性能显着提高 >单层。 自旋阀的MR比也增加,RA保持在可接受的水平。 耦合层优选为Ru,并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。
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公开(公告)号:US20060164765A1
公开(公告)日:2006-07-27
申请号:US11043624
申请日:2005-01-26
申请人: Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
发明人: Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
CPC分类号: G11B5/39
摘要: The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
摘要翻译: 通过用钽和钌或铜替代传统的单层种子,在高开关场中的CPP GMR器件中的IrMn钉扎层的有效性得到改善。 钽用于抵消下层的结晶影响,而钌或铜提供合适的碱以生长IrMn层。
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公开(公告)号:US20110179635A1
公开(公告)日:2011-07-28
申请号:US13065966
申请日:2011-04-04
申请人: Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人: Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号: G11B7/22
CPC分类号: H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λs values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically
摘要翻译: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀,其中CoFe层的Fe含量为20〜70原子%,NiFe层的Ni含量为85〜100原子%,保持低Hc, λs值。 与FeFe中的Fe含量通常<20原子%,NiFe中的Ni含量<85原子%的常规CoFe / NiFe自由层相比,CoFe层中高于正常Fe含量使MR比提高了16% 。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。 对于具有AP2 / Ru / AP1配置的钉扎层,通过由[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成的AP1层来进一步提高自旋阀性能。
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公开(公告)号:US20070014054A1
公开(公告)日:2007-01-18
申请号:US11180808
申请日:2005-07-13
申请人: Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人: Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
CPC分类号: H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically
摘要翻译: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀,其中CoFe层的Fe含量为20〜70原子%,NiFe层的Ni含量为85〜100原子%,保持低Hc, λ SUB>值。 与FeFe中Fe含量通常<20原子%,NiFe中的Ni含量<85原子的常规CoFe / NiFe自由层相比,CoFe层中高于正常Fe含量的MR比提高了> 16% %。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。 对于具有AP2 / Ru / AP1配置的钉扎层,通过由[CoFe / Cu] 2 / CoFe中CoFe和Cu层的叠层构成的AP1层进一步改善自旋阀性能 。
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公开(公告)号:US20060007605A1
公开(公告)日:2006-01-12
申请号:US10886288
申请日:2004-07-07
申请人: Min Li , Cheng Horng , Cherng Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
发明人: Min Li , Cheng Horng , Cherng Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T428/115
摘要: Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is provided.
摘要翻译: 已经通过用Ta上的NiCr双层替代常规种子层(通常为Ta)来制造改进的CPP GMR器件,所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL(纳米氧化物层)的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 提供了一种制造该装置的方法。
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