公开(公告)号：US5719347A

公开(公告)日：1998-02-17

申请号：US541255

申请日：1995-10-12

申请人： Takamichi Masubuchi ,  Toshiyuki Iwamoto

发明人： Takamichi Masubuchi ,  Toshiyuki Iwamoto

IPC分类号： G10B3/12 ,  G10H1/34 ,  G10C3/04 ,  G10C3/12

CPC分类号： G10H1/344

摘要： A keyboard apparatus for an electronic musical instrument includes a key displacement detection unit. The key displacement detection unit includes a first resilient member, a movable member connected to the first resilient member, a second resilient member connected to the movable member, and a base fixing member connected to the second resilient member. The base fixing member may be directly or indirectly fixed to a keyboard musical instrument so that the key displacement detection unit is mounted to the keyboard musical instrument. A first displacement detection sensor is coupled with the first resilient member for detecting a key depression force in a key depression-release direction, and a second displacement detection sensor is coupled with the second resilient member for detecting a key depression force in a key arrangement direction. Both the first displacement detection sensor and the second displacement sensor are mounted on the key displacement detection unit. The first resilient member and the second resilient member are connected to the movable member in a folded manner. As a result, the key displacement detection unit becomes small in size and yet provides a relatively large displacement in the first and the second resilient members with a relatively small key depression force.

摘要翻译： 一种用于电子乐器的键盘装置，包括键位移检测单元。 键位移检测单元包括第一弹性构件，连接到第一弹性构件的可动构件，连接到可动构件的第二弹性构件和连接到第二弹性构件的基座固定构件。 基座固定构件可以直接或间接地固定到键盘乐器，使得键位移检测单元被安装到键盘乐器。 第一位移检测传感器与第一弹性构件联接，用于检测键按压释放方向上的按键力，第二位移检测传感器与第二弹性构件联接，用于检测键排列方向上的按键力 。 第一位移检测传感器和第二位移传感器都安装在键位移检测单元上。 第一弹性构件和第二弹性构件以折叠方式连接到可动构件。 结果，键位移检测单元的尺寸变小，并且在第一和第二弹性构件中以相对小的键按压力提供相对大的位移。

公开(公告)号：US4668843A

公开(公告)日：1987-05-26

申请号：US828292

申请日：1986-02-11

申请人： Keisuke Watanabe ,  Toshiyuki Iwamoto

发明人： Keisuke Watanabe ,  Toshiyuki Iwamoto

IPC分类号： G10H1/34 ,  H01H13/705 ,  G10H3/00

CPC分类号： G10H1/344 ,  H01H13/705 ,  G10H2220/281 ,  H01H2225/018 ,  H01H2229/068 ,  H01H2231/018 ,  Y10S84/07

摘要： A keyboard switch apparatus for an electronic musical instrument has first and second switches each constituted by stationary and movable contacts. The stationary contacts of the first and second switches are formed adjacent to each other on a single board. The movable contacts of the first and second switches are mounted on a single flexible member arranged above the single board and are normally spaced apart from the stationary contacts at positions opposite thereto. The flexible member and the movable contacts of the first and second switches are integrally formed to have a uniform cross-sectional shape along one direction. The flexible member is deformed in response to the depression of a key. The stationary contacts corresponding to the movable contacts of the first and second switches are closed with a time difference according to a speed of key depression.

摘要翻译： 一种用于电子乐器的键盘开关装置，具有第一和第二开关，每个开关均由静止和可动触点构成。 第一和第二开关的固定触头在单个板上彼此相邻地形成。 第一和第二开关的可移动触头安装在布置在单板上方的单个柔性构件上，并且在与其相对的位置处通常与固定触点间隔开。 第一和第二开关的柔性构件和可动触头一体地形成为沿着一个方向具有均匀的横截面形状。 柔性构件响应于键的按压而变形。 与第一开关和第二开关的可动触点相对应的固定触点根据键按压的速度以时间差闭合。

公开(公告)号：US08586437B2

公开(公告)日：2013-11-19

申请号：US13585394

申请日：2012-08-14

申请人： Toshiyuki Iwamoto ,  Gen Tsutsui

发明人： Toshiyuki Iwamoto ,  Gen Tsutsui

IPC分类号： H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/823431 ,  H01L21/823412 ,  H01L21/823462

摘要： A method of manufacturing a semiconductor device includes forming a first region including a FinFET (Fin Field Effect Transistor), forming a second region including a PlanarFET (Planar Field Effect Transistor), forming first extension regions in the plurality of fins in the first region, forming second extension regions in the second region using the second gate electrode as a mask, forming first side walls and second side walls on side surfaces of the first gate electrode and on side surfaces of the second gate electrode, respectively, and forming a source and a drain of the FinFET in the first region using the first gate electrode and first side walls as masks and forming a source and a drain of the PlanarFET in the second region by an ion implantation method using the second gate electrode and second side walls as masks, at the same time.

摘要翻译： 一种制造半导体器件的方法包括：形成包括FinFET（Fin场效应晶体管）的第一区域，形成包括平面场效应晶体管的平面场效应晶体管的平面场效应晶体管的第二区域，形成第一区域中的多个鳍片的第一延伸区域; 使用所述第二栅电极作为掩模在所述第二区域中形成第二延伸区域，分别在所述第一栅电极的侧表面和所述第二栅电极的侧表面上分别形成第一侧壁和第二侧壁，以及形成源 使用第一栅电极和第一侧壁作为掩模在第一区域中的FinFET的漏极，并且通过使用第二栅电极和第二侧壁作为掩模的离子注入方法在第二区域中形成平面FET的源极和漏极 ， 与此同时。

公开(公告)号：US08324488B2

公开(公告)日：2012-12-04

申请号：US12880822

申请日：2010-09-13

申请人： Toshiyuki Iwamoto ,  Kenichi Nishida

发明人： Toshiyuki Iwamoto ,  Kenichi Nishida

IPC分类号： G10D3/16

CPC分类号： G10H1/348 ,  G10H2220/411

摘要： A lever 1 pivots within a certain stroke range by a player's depression of the lever 1. A coil spring 4 is displaceable within the entire stroke range of the lever 1 to produce a reaction force having a characteristic that the reaction force increases with an increase in the displacement. A dome-shaped rubber member 5 starts being displaced at some point in the stroke of the lever 1 to produce a reaction force having a characteristic that the rate of change in reaction force with respect to the displacement decreases in an area placed in the displacement. The characteristic is obtained by the dome-shaped rubber member 5 coming into contact with the lever 1 at some point in the stroke of the lever 1 to start being displaced by further depression of the lever 1 to buckle at some point in the displacement of the dome-shaped rubber member 5.

摘要翻译： 杠杆1通过玩家的杠杆1的下压在某一行程范围内枢转。螺旋弹簧4可以在杠杆1的整个行程范围内移动，以产生反作用力，反作用力随着反作用力的增加而增大 位移。 圆顶状橡胶构件5开始在杆1的行程中的某一点被移动，以产生反作用力，该反作用力具有相对于位移的反作用力的变化率在放置在位移中的区域中减小的特性。 该特征是通过在杠杆1的行程中的某个点处与杠杆1接触的圆顶形橡胶构件5获得的，以便通过进一步按压杠杆1而在位置处的位移 圆顶形橡胶构件5。

公开(公告)号：US20110061518A1

公开(公告)日：2011-03-17

申请号：US12880822

申请日：2010-09-13

申请人： Toshiyuki Iwamoto ,  Kenichi Nishida

发明人： Toshiyuki Iwamoto ,  Kenichi Nishida

IPC分类号： G10H1/32

CPC分类号： G10H1/348 ,  G10H2220/411

摘要： A lever 1 pivots within a certain stroke range by a player's depression of the lever 1. A coil spring 4 is displaceable within the entire stroke range of the lever 1 to produce a reaction force having a characteristic that the reaction force increases with an increase in the displacement. A dome-shaped rubber member 5 starts being displaced at some point in the stroke of the lever 1 to produce a reaction force having a characteristic that the rate of change in reaction force with respect to the displacement decreases in an area placed in the displacement. The characteristic is obtained by the dome-shaped rubber member 5 coming into contact with the lever 1 at some point in the stroke of the lever 1 to start being displaced by further depression of the lever 1 to buckle at some point in the displacement of the dome-shaped rubber member 5.

摘要翻译： 杠杆1通过玩家的杠杆1的下压在某一行程范围内枢转。螺旋弹簧4可以在杠杆1的整个行程范围内移动，以产生反作用力，反作用力随着反作用力的增加而增大 位移。 圆顶状橡胶构件5开始在杆1的行程中的某一点被移动，以产生反作用力，该反作用力具有相对于位移的反作用力的变化率在放置在位移中的区域中减小的特性。 该特征是通过在杠杆1的行程中的某个点处与杠杆1接触的圆顶形橡胶构件5获得的，以便通过进一步按压杠杆1而在位置处的位移 圆顶形橡胶构件5。

公开(公告)号：US07507966B2

公开(公告)日：2009-03-24

申请号：US10568528

申请日：2004-08-19

申请人： Seizi Nishizawa ,  Toshiyuki Iwamoto

发明人： Seizi Nishizawa ,  Toshiyuki Iwamoto

IPC分类号： G01J5/02

CPC分类号： G01J3/08 ,  G01N21/3586 ,  G01N2201/0696 ,  G01N2201/0698

摘要： A time-domain pulsed spectroscopy apparatus which has a pulsed laser light source; a splitting unit to split pulsed laser light; a pulsed-light emitting unit; a detector; a sample holder; and a sample-unit entrance and exit optical systems; wherein the time-domain pulsed spectroscopy apparatus further comprises: at least one optical-path-length varying unit for setting a photometric range; at least one optical delay unit for the wave form signal measurement; and, at least one gate member to pass or block the pulsed light to a reflector.

摘要翻译： 一种具有脉冲激光光源的时域脉冲光谱仪; 用于分离脉冲激光的分离单元; 脉冲发光单元; 检测器 样品架 和采样单元入口和出口光学系统; 其中所述时域脉冲光谱装置还包括：用于设定光度范围的至少一个光路长度变化单元; 用于波形信号测量的至少一个光学延迟单元; 以及至少一个栅极件，以将脉冲光传递或阻挡到反射器。

公开(公告)号：US20060278830A1

公开(公告)日：2006-12-14

申请号：US10568528

申请日：2004-08-19

申请人： Seizi Nishizawa ,  Toshiyuki Iwamoto

发明人： Seizi Nishizawa ,  Toshiyuki Iwamoto

IPC分类号： G01N21/35

CPC分类号： G01J3/08 ,  G01N21/3586 ,  G01N2201/0696 ,  G01N2201/0698

摘要： It is an object to provide a time-domain pulsed spectroscopy apparatus in which time-domain pulsed spectroscopy of multiple samples, states thereof, and so on can be carried out easily and in a short period of time. A time-domain pulsed spectroscopy apparatus of the present invention comprises a pulsed laser light source; a splitting unit configured to split pulsed laser light from the pulsed laser light source into excitation pulsed laser light and detection pulsed laser light; a pulsed-light emitting unit; a detector; a sample holder configured to hold the sample; and sample-unit entrance and exit optical systems configured to guide the pulsed light from the pulsed-light emitting unit to the sample and to guide to the detector pulsed light reflected from or transmitted through the sample due to the irradiation; wherein the time-domain pulsed spectroscopy apparatus further comprises: at least one optical-path-length varying unit for setting a photometric range, disposed in an incident-side optical path from the splitting unit to the pulsed-light emitting unit and/or in a detection-side optical path from the splitting unit to the detector; and at least one optical delay unit for the wave form signal measurement, disposed in the incident-side optical path from the splitting unit to the pulsed-light emitting unit and/or in the detection-side optical path from the splitting unit to the detector.

摘要翻译： 本发明的目的是提供一种时域脉冲光谱装置，其中可以容易地且在短时间内进行多个样品及其状态等的时域脉冲光谱。 本发明的时域脉冲光谱装置包括脉冲激光光源; 分离单元，被配置为将来自所述脉冲激光光源的脉冲激光分为激发脉冲激光和检测脉冲激光; 脉冲发光单元; 检测器 被配置为保持样品的样品保持器; 以及样本单元入口和出口光学系统，其被配置为将来自脉冲发光单元的脉冲光引导到样品并且引导检测器由于照射而从样品反射或透射的脉冲光; 其中所述时域脉冲光谱装置还包括：至少一个光路长度变化单元，用于设置测光范围，设置在从分束单元到脉冲发光单元的入射侧光路中和/或 从分离单元到检测器的检测侧光路; 以及用于波形信号测量的至少一个光学延迟单元，设置在从分离单元到脉冲发光单元的入射侧光路中和/或从分离单元到检测器的检测侧光路中 。

公开(公告)号：US20060145265A1

公开(公告)日：2006-07-06

申请号：US11300419

申请日：2005-12-15

申请人： Yuri Masuoka ,  Naohiko Kimizuka ,  Kiyotaka Imai ,  Toshiyuki Iwamoto

发明人： Yuri Masuoka ,  Naohiko Kimizuka ,  Kiyotaka Imai ,  Toshiyuki Iwamoto

IPC分类号： H01L29/94

CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L21/28194 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： While forming an N-type MOSFET 118 and a P-type MOSFET 120 within regions operating using the same power supply voltage, thickness of a gate insulating film 106a of an N-type MOSFET 118 is made to be thicker than thickness of a gate insulating film 106b of a P-type MOSFET 120.

摘要翻译： 在使用相同电源电压工作的区域内形成N型MOSFET 118和P型MOSFET 120时，使N型MOSFET118的栅极绝缘膜106a的厚度比栅极厚度厚 P型MOSFET120的绝缘膜106b。

公开(公告)号：US20050253181A1

公开(公告)日：2005-11-17

申请号：US11129440

申请日：2005-05-16

申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Masayuki Terai

发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Masayuki Terai

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L31/119

CPC分类号： H01L29/517 ,  H01L21/823857 ,  H01L29/4916 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 formed on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 112 and a polycrystalline silicon film 114 juxtaposed to N-type MOSFET 118 on the silicon substrate 102. The second high dielectric constant film 112 is formed to have the film thickness thinner than the film thickness of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 contains one or more element(s) selected from a group consisting of Hf and Zr.

摘要翻译： 半导体器件100包括硅衬底102，包括形成在硅衬底102上的第一高介电常数膜111和多晶硅膜114的N型MOSFET 118和包括第二高介电常数的P型MOSFET 120 膜112和与硅衬底102上的N型MOSFET 118并列的多晶硅膜114.第二高介电常数膜112形成为具有比第一高介电常数膜111的膜厚薄的膜厚度。 第一高介电常数膜111和第二高介电常数膜112包含从由Hf和Zr组成的组中选择的一种或多种元素。

公开(公告)号：US06835884B2

公开(公告)日：2004-12-28

申请号：US09956233

申请日：2001-09-19

申请人： Toshiyuki Iwamoto ,  Shigehiko Mizuno ,  Hiroyuki Masuda ,  Shuzo Karakawa ,  Hiroaki Takahashi

发明人： Toshiyuki Iwamoto ,  Shigehiko Mizuno ,  Hiroyuki Masuda ,  Shuzo Karakawa ,  Hiroaki Takahashi

IPC分类号： G10H700

CPC分类号： G10H1/0058 ,  G10H1/0025 ,  G10H2240/056 ,  G10H2240/061 ,  G10H2240/071 ,  G10H2240/251

摘要： A server apparatus connected in a communication network provides a plurality of music piece template data files respectively representing features of source music pieces. A client apparatus connected in the communication network requests a music piece template data file from the server. The server delivers and the client receives the requested template data file. The client creates a new piece of music based on the received template data file. The created music piece is a new piece but resembles the source music piece to a certain extent having certain characteristic features of the source music. In an alternative arrangement, the server delivers a source music piece, and the template data file is created at the client side by extracting features from the source music piece.

摘要翻译： 连接在通信网络中的服务器装置提供分别表示源音乐片段的特征的多个乐曲模板数据文件。 连接在通信网络中的客户端设备从服务器请求音乐片模板数据文件。 服务器传递，客户端接收请求的模板数据文件。 客户根据接收的模板数据文件创建一段新的音乐。 创作的音乐作品是一个新的片段，但在一定程度上类似于源音乐片段，具有源音乐的某些特征。 在另一种安排中，服务器提供源音乐片段，并通过从源乐曲中提取特征，在客户端创建模板数据文件。