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39 条记录 (耗时 0.023 秒)

    Asymmetry correction circuit
    31.
    发明授权
    Asymmetry correction circuit 失效

    公开(公告)号：US06529340B2

    公开(公告)日：2003-03-04

    申请号：US09753316

    申请日：2000-12-29

    申请人： Sudhir M. Gowda ,  Scott K. Reynolds

    发明人： Sudhir M. Gowda ,  Scott K. Reynolds

    IPC分类号： G11B502

    CPC分类号： G11B20/10009 ,  G11B5/012 ,  G11B5/02 ,  G11B5/09 ,  G11B2005/0016

    摘要： A technique for converting asymmetric waveforms into symmetric ones. The technique is used in disk drive read channels which receive asymmetric waveforms from magnetoresistive heads. Conversion of these waveforms into symmetric ones results in improved bit error rate of the read channel. The correction technique can be used for any general asymmetry transfer function, and in any general application where the correction of asymmetric waveforms is needed. The technique involves splitting the input signal into two rectified paths and applying correction independently on each of the paths.

    MOSFET rectifier circuit with operational amplifier feedback
    32.
    发明授权
    MOSFET rectifier circuit with operational amplifier feedback 失效
    MOSFET整流电路与运算放大器反馈

    公开(公告)号：US06442053B1

    公开(公告)日：2002-08-27

    申请号：US09753311

    申请日：2000-12-29

    申请人： Sudhir M. Gowda ,  Scott K. Reynolds

    发明人： Sudhir M. Gowda ,  Scott K. Reynolds

    IPC分类号： H02M7217

    CPC分类号： H02M7/217

    摘要： A circuit arrangement for rectifying alternating current (AC) signals in solid-state technologies that have gain devices with low transconductance. A contemplated circuit uses operational amplifiers connected in feedback mode to enhance the effective transconductance of the gain devices.

    摘要翻译： 用于整流具有低跨导增益器件的固态技术中的交流（AC）信号的电路装置。 预期的电路使用以反馈模式连接的运算放大器来增强增益器件的有效跨导。

    Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
    35.
    发明授权
    Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure 失效
    用三甲基砷超压快速热退火砷化镓

    公开(公告)号：US4879259A

    公开(公告)日：1989-11-07

    申请号：US306268

    申请日：1989-02-01

    申请人： Scott K. Reynolds ,  Dietrich W. Vook ,  James F. Gibbons

    发明人： Scott K. Reynolds ,  Dietrich W. Vook ,  James F. Gibbons

    IPC分类号： H01L21/324

    CPC分类号： H01L21/3245 ,  Y10S148/004 ,  Y10S148/022 ,  Y10S148/084

    摘要： A method of annealing a wafer in a rapid thermal annealer is disclosed. The walls of the chamber are heated more rapidly than is the wafer. In a preferred embodiment, the interior of the graphite walls of the annealer is lined with a molybdenum sheet which is open toward the lamps that heat the chamber. Thus, the walls heat very rapidly to a temperature greater than the condensation point of arsenic, preventing arsenic condensation on the walls. Effective annealing can be achieved at wall temperatures in the range of 500.degree. to 600.degree. C. Prior to the heat ramp up, an arsenic atmosphere, preferably trimethylarsenic (TMAs) at an appropriate overpressure is introduced. This overpressure is maintained both during the heating and cooling cycle. By the use of this method, the exposure time for annealing can be reduced from prior times of as much as 20 minutes to as little as 10 seconds.

    摘要翻译： 公开了一种在快速热退火炉中退火晶片的方法。 室的壁比晶片加热得更快。 在优选实施例中，退火炉的石墨壁的内部衬有钼片，该钼片向加热腔室的灯开放。 因此，壁迅速加热到大于砷的凝结点的温度，防止壁上的砷冷凝。 在500〜600℃的壁温下可以实现有效的退火。在加热之前，引入砷气氛，优选在适当的超压下的三甲基砷（TMA）。 在加热和冷却循环期间都保持这种超压。 通过使用该方法，退火的曝光时间可以从先前的20分钟至少至10秒的时间减少。