Magnetoresistive sensor manufacturing method
    31.
    发明授权
    Magnetoresistive sensor manufacturing method 失效
    磁阻传感器制造方法

    公开(公告)号:US5972420A

    公开(公告)日:1999-10-26

    申请号:US918643

    申请日:1997-08-22

    摘要: A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer, the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.

    摘要翻译: 通过在下间隙层的上表面上产生第一反铁磁层制造的磁阻传感器,所述反铁磁层具有由下间隙层的上表面形成的轨道宽度分开的第一和第二暴露部分。 然后,将自由磁性层,非磁性导电层,钉扎磁性层和第二反铁磁层层叠在第一反铁磁性层上,并在轨道宽度上一个接一个地堆叠。 由于在第一反铁磁层之后产生自由磁性层,所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时,磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态,所以可降低Barkhausen噪声的量。

    Magnetic head for photo-magnetic recording
    32.
    发明授权
    Magnetic head for photo-magnetic recording 失效
    用于光磁记录的磁头

    公开(公告)号:US5237475A

    公开(公告)日:1993-08-17

    申请号:US4774

    申请日:1993-01-14

    IPC分类号: G11B5/48 G11B11/105

    CPC分类号: G11B5/4826 G11B11/1058

    摘要: A magnetic head for photo-magnetic recording wherein an adaptor is attached to the distal end of a load beam, and a slider is joined to the adaptor via a flexure. A flat portion of the adaptor to which is attached the flexure is inclined at a given angle in the radial direction of a photo-magnetic disk, or the flat portion of the adaptor and a tongue of the flexure are inclined at respective given angles in the rotational direction of the photo-magnetic disk. The sliding mounting height is set optionally, a static attitude of the slider is held horizontally and stably, and the head is reduced in size and weight to permit high-speed access.

    摘要翻译: 一种用于光磁记录的磁头,其中适配器附接到负载梁的远端,并且滑块通过挠曲件连接到适配器。 连接有弯曲部的适配器的平坦部分以光磁盘的径向以给定的角度倾斜,或者适配器的平坦部分和挠曲件的舌部以相应的给定角度倾斜在 光磁盘的旋转方向。 滑动安装高度可选地设置,滑块的静态姿态水平且稳定地保持,并且头部的尺寸和重量减小以允许高速进入。

    Structure for fixing floating type magnetic head to gimbal spring
    33.
    发明授权
    Structure for fixing floating type magnetic head to gimbal spring 失效
    将浮动式磁头固定到万向弹簧的结构

    公开(公告)号:US4700250A

    公开(公告)日:1987-10-13

    申请号:US798957

    申请日:1985-11-18

    摘要: Disclosed is a floating system magnetic head which comprises: a magnetic core having a gap formed therein and a coil wound thereon; a slider on which the magnetic core is fixed and which is supplied with a floating-up force by an air flow coming above a magnetic disk; a cantilever gimbal spring having a free end portion to which the slider is fixed through adhesive means and for applying a spring force to the slider against the floating-up force; and at least one hole formed in an adhesion portion of the gimbal spring to allow the adhesion means to come to the rear side of the adhesion portion through said hole to thereby increase the adhesion area between the gimbal spring and the slider.

    摘要翻译: 公开了一种浮动系统磁头,其包括:形成有间隙的磁芯和缠绕在其上的线圈; 磁芯固定在该滑块上,并通过来自磁盘上方的气流被提供浮动力; 具有自由端部的悬臂万向弹簧,所述滑块通过粘合装置固定到所述自由端部,并且克服所述浮起力向所述滑块施加弹簧力; 以及形成在万向弹簧的粘合部分中的至少一个孔,以允许粘合装置通过所述孔进入粘附部分的后侧,从而增加万向弹簧和滑块之间的粘合面积。

    Magnetic head with clamping erase back core
    34.
    发明授权
    Magnetic head with clamping erase back core 失效
    磁头带夹紧擦除芯

    公开(公告)号:US4618902A

    公开(公告)日:1986-10-21

    申请号:US509720

    申请日:1983-06-30

    IPC分类号: G11B5/265 G11B5/27

    CPC分类号: G11B5/2651

    摘要: In a magnetic head having a write/read layer for writing and reading data, erase layers for erasing edge portions of recording newly written in a writing operation and recording previously written, and an erase-back core, the improvement wherein the erase-back core is made of metal magnetic material and has side clamping pieces for clamping the core on both sides of the erase layers.

    摘要翻译: 在具有用于写入和读取数据的写入/读取层的磁头中,用于擦除写入先前写入的写入操作和记录的新写入的边缘部分的擦除层和擦除芯,其中擦除芯 由金属磁性材料制成,并且具有用于在擦除层的两侧夹持芯的侧夹持件。

    Solid-state imaging device and method for fabricating the same
    35.
    发明授权
    Solid-state imaging device and method for fabricating the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US07791159B2

    公开(公告)日:2010-09-07

    申请号:US12261357

    申请日:2008-10-30

    IPC分类号: H01L29/78

    摘要: A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.

    摘要翻译: 一种固态成像装置,包括成像区域,形成在成像区域的外周部分的外围电路区域,具有成像区域和在其主表面上的外围电路区域的第一导电型半导体基板,第二导电性 形成在半导体衬底中的第一半导体层,形成在第一半导体层中的第一导电类型的第二半导体层,形成在贯穿半导体衬底的贯穿半导体衬底的贯通半导体衬底的厚度方向的通孔,以及形成 在半导体衬底上并连接到通孔。 通孔穿过半导体衬底的第一导电类型区域。

    SOLID-STATE IMAGE SENSING DEVICE AND METHOD FOR FABRICATING THE SAME
    36.
    发明申请
    SOLID-STATE IMAGE SENSING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    固态图像感测装置及其制造方法

    公开(公告)号:US20100020219A1

    公开(公告)日:2010-01-28

    申请号:US12496102

    申请日:2009-07-01

    IPC分类号: H04N5/335 H01L31/18

    CPC分类号: H01L27/14812 H01L27/14683

    摘要: A solid-state image sensing device includes: a plurality of light receiving elements arranged in a matrix in a device formation region surrounded by a device isolation region of a semiconductor substrate; a plurality of vertical transfer sections for transferring charges of the light receiving elements in the column direction; and a horizontal transfer section for receiving the charges from the vertical transfer sections and for transferring the received charges in the row direction. The horizontal transfer section includes: a horizontal channel region; and a plurality of horizontal transfer electrodes extending over the horizontal channel region and the device isolation region and being spaced apart from each other. The distance between the horizontal transfer electrodes is larger at a boundary between the device formation region and the device isolation region than in the middle of the horizontal channel region.

    摘要翻译: 固态图像感测装置包括:多个光接收元件,其被布置在由半导体衬底的器件隔离区包围的器件形成区域中的矩阵中; 多个垂直传送部分,用于在列方向上传送光接收元件的电荷; 以及水平传送部分,用于从垂直传送部分接收电荷并用于在行方向传送接收的电荷。 水平传送部分包括:水平通道区域; 以及在水平沟道区域和器件隔离区域上延伸并且彼此间隔开的多个水平传输电极。 在水平传输电极之间的距离在器件形成区域和器件隔离区域之间的边界处比在水平沟道区域的中间更大。

    Solid state imaging device and method for manufacturing the same
    37.
    发明授权
    Solid state imaging device and method for manufacturing the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US07548666B2

    公开(公告)日:2009-06-16

    申请号:US11582984

    申请日:2006-10-19

    IPC分类号: G02B6/12

    摘要: A plurality of light receiving elements are arranged in a matrix with uniform space therebetween in a light receiving region defined on a semiconductor substrate. A plurality of read-out electrodes are formed on the semiconductor substrate in an arrangement corresponding to the light receiving elements to read charges generated by the light receiving elements, a light shield film having openings positioned above the light receiving elements is formed to cover the read-out electrodes, first optical waveguides are formed in the openings above the light receiving elements and second optical waveguides are formed on the light shield film. The second optical waveguides are in the form of dots, stripes or a grid when viewed in plan.

    摘要翻译: 多个光接收元件以限定在半导体衬底上的光接收区域中以均匀的间隔排列成矩阵。 多个读出电极以对应于光接收元件的布置形成在半导体衬底上,以读取由光接收元件产生的电荷,形成有位于光接收元件上方的开口的遮光膜覆盖读取 第一光波导形成在光接收元件上方的开口中,第二光波导形成在遮光膜上。 当在平面图中观察时,第二光波导是点,条纹或格栅的形式。

    Solid-state imaging apparatus and manufacturing method thereof
    38.
    发明授权
    Solid-state imaging apparatus and manufacturing method thereof 有权
    固态成像装置及其制造方法

    公开(公告)号:US07422925B2

    公开(公告)日:2008-09-09

    申请号:US10847442

    申请日:2004-05-18

    IPC分类号: H01L21/00

    CPC分类号: H01L29/66946 H01L27/14831

    摘要: The present invention aims to provide a solid-state apparatus and a manufacturing method thereof, the solid-state apparatus having both high transfer efficiency in a horizontal transfer CCD and efficient breakdown voltage in a vertical transfer CCD and including a semiconductor substrate 110, first layer poly-silicon electrodes 120 and second layer poly-silicon electrodes 130 which form two layered overlap poly-silicon electrodes, an embedded channel region 140 which is formed in a surface unit of the semiconductor substrate 110 and becomes a transfer path for signal charge, and a photodiode region where photodiodes are aligned two-dimensionally, the photodiodes converting light into signal charge and accumulating the signal charge, wherein an inter-electrode distance c in the horizontal transfer CCD is shorter than an inter-electrode distance a in the vertical transfer CCD.

    摘要翻译: 本发明旨在提供一种固态设备及其制造方法,该固态设备在水平传送CCD中具有高传输效率和垂直传输CCD中的有效击穿电压,并且包括半导体衬底110,第一层 形成两层重叠多晶硅电极的多晶硅电极120和第二层多晶硅电极130,形成在半导体衬底110的表面单元中并成为用于信号电荷的传输路径的嵌入沟道区140,以及 光电二极管二维排列的光电二极管区域,光电二极管将光转换为信号电荷并累积信号电荷,其中水平转印CCD中的电极间距离c比垂直转印CCD中的电极间距离a短 。

    Solid-state imaging device and method for manufacturing the same
    39.
    发明申请
    Solid-state imaging device and method for manufacturing the same 审中-公开
    固态成像装置及其制造方法

    公开(公告)号:US20070090480A1

    公开(公告)日:2007-04-26

    申请号:US11474654

    申请日:2006-06-26

    IPC分类号: H01L31/00

    CPC分类号: H01L27/14812 H01L29/768

    摘要: The solid-state imaging device of the present invention includes: a plurality of photodetectors that are arranged in a two-dimensional matrix; a plurality of vertical transfer portions that transfer, in a vertical direction, signal electric charges which are read out from the respective photodetectors; a horizontal transfer portion that receives the signal electric charges transferred by the vertical transfer portions, and transfers the signal electric charges in a horizontal direction; a barrier region that is adjacent to the horizontal transfer portion, and allows an excess electric charge in the horizontal transfer portion to pass through; and a drain region that is adjacent to the barrier region and drains the excess electric charge which has passed through the barrier region; and bus lines that are disposed in parallel with the drain region, and apply control voltages to electrodes of the horizontal transfer portion. The bus lines and the electrodes of the horizontal transfer portion are connected via a connection pattern that is disposed between the bus lines and the drain region. A power loss in the horizontal transfer portion is suppressed, and both of an increase in the number of pixels and a decrease in power consumption are achieved.

    摘要翻译: 本发明的固态成像装置包括:以二维矩阵排列的多个光电探测器; 在垂直方向上传送从各个光电检测器读出的信号电荷的多个垂直传送部; 水平传送部分,其接收由垂直传送部分传送的信号电荷,并在水平方向上传送信号电荷; 与水平转印部相邻的阻挡区域,使水平转印部中的过量电荷通过; 以及与所述阻挡区域相邻并排出已经通过所述阻挡区域的多余电荷的漏极区域; 以及与漏极区域并联设置的总线,并向水平转印部分的电极施加控制电压。 总线线路和水平传送部分的电极经由布置在总线和漏极区域之间的连接图案连接。 抑制了水平传送部分的功率损耗,并且实现了像素数量的增加和功耗的降低。

    Charge detecting device
    40.
    发明授权
    Charge detecting device 失效
    充电检测装置

    公开(公告)号:US07034347B2

    公开(公告)日:2006-04-25

    申请号:US10793107

    申请日:2004-03-03

    CPC分类号: H01L27/14609 H01L27/14806

    摘要: There is provided a charge detecting device that can convert an accumulated charge to a voltage at a low voltage and a high efficiency, and has a large dynamic range of an output voltage and satisfactory linearity of a conversion efficiency. The charge detecting device includes a charge accumulating portion including a low concentration N-type (N−) layer 108 formed in a P-type well 101 and a high concentration N-type (N+) layer formed between the N− layer and a principal surface. The N+ layer is connected to an input terminal of an amplifying transistor of an output circuit, and after a reverse bias is applied to the N+ layer during discharging of the accumulated charge, the entire N− layer is depleted at least until a saturated charge is accumulated.

    摘要翻译: 提供了一种电荷检测装置,其可以将累积电荷转换成低电压和高效率的电压,并且具有大的输出电压的动态范围和转换​​效率的令人满意的线性度。 电荷检测装置包括电荷累积部分,其包括形成在P型阱101中的低浓度N型(N)层108和形成在N层和主体之间的高浓度N型(N +)层 表面。 N +层连接到输出电路的放大晶体管的输入端,并且在累积电荷放电期间向N +层施加反向偏压之后,整个N层至少耗尽直到饱和电荷为 积累。