Thin film transistor crystal liquid display device including plural conductive beads and manufacturing method thereof
    31.
    发明授权
    Thin film transistor crystal liquid display device including plural conductive beads and manufacturing method thereof 有权
    包括多个导电珠的薄膜晶体管晶体液晶显示装置及其制造方法

    公开(公告)号:US06829021B2

    公开(公告)日:2004-12-07

    申请号:US10228981

    申请日:2002-08-27

    CPC classification number: G02F1/133553 G02F1/133555

    Abstract: A structure of a thin film transistor (TFT) liquid crystal display (LCD) device including plural conductive beads and a manufacturing method thereof are provided. The manufacturing method includes the steps of (a) providing an insulated substrate, (b) forming a TFT structure and a transparent electrode structure on the insulated substrate wherein the transparent electrode structure is connected to a source/drain region of the TFT structure, and (c) forming a thin film structure including plural conductive beads on the transparent electrode structure.

    Abstract translation: 提供了包括多个导电珠的薄膜晶体管(TFT)液晶显示器(LCD)器件的结构及其制造方法。 制造方法包括以下步骤:(a)提供绝缘基板,(b)在绝缘基板上形成TFT结构和透明电极结构,其中透明电极结构连接到TFT结构的源极/漏极区域,以及 (c)在透明电极结构上形成包括多个导电珠的薄膜结构。

    Metal contact structure and method for thin film transistor array in liquid crystal display
    32.
    发明授权
    Metal contact structure and method for thin film transistor array in liquid crystal display 有权
    液晶显示器薄膜晶体管阵列的金属接触结构及方法

    公开(公告)号:US06757031B2

    公开(公告)日:2004-06-29

    申请号:US09780774

    申请日:2001-02-09

    CPC classification number: H01L29/66765 G02F1/1368 H01L29/41733 H01L29/458

    Abstract: Disclosed is a metal contact structure and method for a thin film transistor array in liquid crystal display in order to prevent source/drain electrode metal layer from plasma damage and oxide insulator formation thereon during contact hole process, such that low contact resistance is obtained between the source/drain electrode metal layer and top-ITO conductive layer, wherein a thin film transistor structure is formed on a substrate and a metal oxide conductive film is covered on the source/drain electrode metal layer of the thin film transistor structure before an insulative passivation layer is deposited over the thin film transistor structure. During the passivation layer is etched to form contact hole for the source/drain electrode metal layer to contact with the top-ITO conductive layer thereafter formed, the metal oxide conductive film prevents the underlying source/drain electrode metal layer from plasma damage and oxide insulator formation thereon, thereby obtaining good contact between the source/drain electrode metal layer and the top-ITO conductive layer.

    Abstract translation: 公开了一种用于在液晶显示器中的薄膜晶体管阵列的金属接触结构和方法,以便在接触孔处理期间防止源极/漏极电极金属层等离子体损伤和其上形成氧化物绝缘体,从而在接触孔处理之间获得低的接触电阻 源极/漏极电极金属层和顶部ITO导电层,其中在基板上形成薄膜晶体管结构,并且在绝缘钝化之前,在薄膜晶体管结构的源极/漏极金属层上覆盖金属氧化物导电膜 层沉积在薄膜晶体管结构上。 在钝化层被蚀刻以形成用于源极/漏极金属层与其后形成的顶部ITO导电层接触的接触孔时,金属氧化物导电膜防止下面的源极/漏极金属层受到等离子体损伤和氧化物绝缘体 从而在源极/漏极金属层和顶部ITO导电层之间获得良好的接触。

    Method of manufacturing optical interference color display
    33.
    发明授权
    Method of manufacturing optical interference color display 失效
    制造光学干涉色彩显示方法

    公开(公告)号:US07547565B2

    公开(公告)日:2009-06-16

    申请号:US11133641

    申请日:2005-05-20

    Applicant: Wen-Jian Lin

    Inventor: Wen-Jian Lin

    CPC classification number: G02B5/285 H01L27/14625

    Abstract: The method of manufacturing an optical interference color display is described. A first electrode structure is formed over a substrate first. At least one first area, second area and third area are defined on the first electrode structure. A first sacrificial layer is formed over the first electrode structure of the first area, the second area and the third area. Moreover, a second sacrificial layer is formed over the first sacrificial layer inside the second area and the third area. In addition, a third sacrificial layer is formed over the second sacrificial layer inside the third area. The etching rates of all sacrificial layers are different. Then, a patterned support layer is formed over the first electrode structure. Next, a second electrode layer is formed and the sacrificial layers are removed to form air gaps. Therefore, the air gaps are effectively controlled by using the material having different etching rates.

    Abstract translation: 描述制造光学干涉色彩显示器的方法。 首先在衬底上形成第一电极结构。 在第一电极结构上限定至少一个第一区域,第二区域和第三区域。 在第一区域,第二区域和第三区域的第一电极结构上形成第一牺牲层。 此外,在第二区域和第三区域内的第一牺牲层上形成第二牺牲层。 此外,在第三区域内的第二牺牲层上形成第三牺牲层。 所有牺牲层的蚀刻速率是不同的。 然后,在第一电极结构上形成图案化的支撑层。 接下来,形成第二电极层,去除牺牲层以形成气隙。 因此,通过使用具有不同蚀刻速率的材料来有效地控制气隙。

    Optical interference display panel and manufacturing method thereof
    34.
    发明授权
    Optical interference display panel and manufacturing method thereof 有权
    光干涉显示面板及其制造方法

    公开(公告)号:US07532385B2

    公开(公告)日:2009-05-12

    申请号:US10807128

    申请日:2004-03-24

    CPC classification number: G02B26/001 B81B7/0012 B81B2201/045

    Abstract: A first electrode and a sacrificial layer are sequentially formed on a substrate, and then first openings for forming supports inside are formed in the first electrode and the sacrificial layer. The supports are formed in the first openings, and then a second electrode is formed on the sacrificial layer and the supports, thus forming a micro electro mechanical system structure. Afterward, an adhesive is used to adhere and fix a protection structure to the substrate for forming a chamber to enclose the micro electro mechanical system structure, and at least one second opening is preserved on sidewalls of the chamber. A release etch process is subsequently employed to remove the sacrificial layer through the second opening in order to form cavities in an optical interference reflection structure. Finally, the second opening is closed to seal the optical interference reflection structure between the substrate and the protection structure.

    Abstract translation: 第一电极和牺牲层依次形成在基板上,然后在第一电极和牺牲层中形成用于形成支撑件的第一开口。 支撑件形成在第一开口中,然后在牺牲层和支撑件上形成第二电极,从而形成微机电系统结构。 之后,使用粘合剂将保护结构粘附并固定到基底上以形成腔室以包围微机电系统结构,并且至少一个第二开口保留在腔室的侧壁上。 随后采用释放蚀刻工艺以通过第二开口去除牺牲层,以便在光学干涉反射结构中形成空腔。 最后,关闭第二个开口以密封衬底和保护结构之间的光学干涉反射结构。

    Interference display cell and fabrication method thereof
    35.
    发明授权
    Interference display cell and fabrication method thereof 失效
    干涉显示单元及其制造方法

    公开(公告)号:US07485236B2

    公开(公告)日:2009-02-03

    申请号:US11221806

    申请日:2005-09-09

    Applicant: Wen-Jian Lin

    Inventor: Wen-Jian Lin

    CPC classification number: G02B26/001

    Abstract: An optical interference display unit with a first electrode, a second electrode and support structures located between the two electrodes is provided. The second electrode has at least a first material layer and a second material layer. At least one material layer of the two is made from conductive material and the second conductive layer is used as a mask while an etching process is performed to etch the first material layer to define the second electrode.

    Abstract translation: 提供了具有位于两个电极之间的第一电极,第二电极和支撑结构的光学干涉显示单元。 第二电极具有至少第一材料层和第二材料层。 两者的至少一个材料层由导电材料制成,并且第二导电层用作掩模,同时执行蚀刻工艺以蚀刻第一材料层以限定第二电极。

    Optical interference type of color display having optical diffusion layer between substrate and electrode
    36.
    发明授权
    Optical interference type of color display having optical diffusion layer between substrate and electrode 有权
    具有在基板和电极之间具有光学扩散层的彩色显示器的光学干涉型

    公开(公告)号:US07342709B2

    公开(公告)日:2008-03-11

    申请号:US10249243

    申请日:2003-03-26

    Applicant: Wen-Jian Lin

    Inventor: Wen-Jian Lin

    CPC classification number: G02F1/29 G02B26/001

    Abstract: An optical interference color display comprising a transparent substrate, an inner-front optical diffusion layer, a plurality of first electrodes, a patterned support layer, a plurality of optical films and a plurality of second electrodes is provided. The inner-front optical diffusion layer is on the transparent substrate and the first electrodes are on the inner-front optical diffusion layer. The patterned support layer is on the inner-front optical diffusion layer between the first electrodes. The optical film is on the first electrodes and the second electrodes are positioned over the respective first electrodes. The second electrodes are supported through the patterned support layer. Furthermore, there is an air gap between the second electrodes and their respective first electrodes.

    Abstract translation: 提供了包括透明基板,内前光学扩散层,多个第一电极,图案化支撑层,多个光学膜和多个第二电极的光学干涉色彩显示器。 内侧光学扩散层位于透明基板上,第一电极位于内侧光学扩散层上。 图案化支撑层位于第一电极之间的内前光学扩散层上。 光学膜位于第一电极上,第二电极位于相应的第一电极上。 第二电极通过图案化支撑层被支撑。 此外,在第二电极和它们各自的第一电极之间存在气隙。

    STRUCTURE OF A MICRO ELECTRO MECHANICAL SYSTEM AND THE MANUFACTURING METHOD THEREOF

    公开(公告)号:US20080055699A1

    公开(公告)日:2008-03-06

    申请号:US11925551

    申请日:2007-10-26

    Applicant: Wen-Jian Lin

    Inventor: Wen-Jian Lin

    CPC classification number: B81C1/00801 B81B2201/047 G02B26/001 G02B26/0841

    Abstract: A structure of a micro electro mechanical system and a manufacturing method are provided, the structure and manufacturing method is adapted for an optical interference display cell. The structure of the optical interference display cell includes a first electrode, a second electrode and posts. The second electrode comprises a conductive layer covered by a material layer and is arranged about parallel with the first electrode. The support is located between the first plate and the second plate and a cavity is formed. In the release etch process of manufacturing the structure, the material layer protects the conductive layer from the damage by an etching reagent. The material layer also protects the conductive layer from the damage from the oxygen and moisture in the air.

    Method for fabricating an interference display unit
    38.
    发明授权
    Method for fabricating an interference display unit 有权
    制造干涉显示单元的方法

    公开(公告)号:US07198973B2

    公开(公告)日:2007-04-03

    申请号:US10705824

    申请日:2003-11-13

    CPC classification number: B81C1/00182 B81B2201/047 G02B26/001 G03F7/0007

    Abstract: A method for fabricating an interference display unit is provided. A first plate and a sacrificial layer are formed in order on a substrate and at least two openings are formed in the first plate and the sacrificial layer. A photoresist layer is spin-coated on the sacrificial layer and fills the openings. A photolithographic process patterns the photoresist layer to define a support with an arm. A second plate is formed on the sacrificial layer and posts. The arm's stress is released through a thermal process. The position of the arm is shifted and the distance between the first plate and the second plate is therefore defined. Finally, The sacrificial layer is removed.

    Abstract translation: 提供一种制造干涉显示单元的方法。 在基板上依次形成第一板和牺牲层,并且在第一板和牺牲层中形成至少两个开口。 将光致抗蚀剂层旋涂在牺牲层上并填充开口。 光刻工艺使光致抗蚀剂图案形成具有臂的支撑。 在牺牲层和柱上形成第二板。 手臂的压力通过热过程释放。 臂的位置移动,因此限定了第一板和第二板之间的距离。 最后,去除牺牲层。

    Interference display cell
    39.
    发明授权
    Interference display cell 有权
    干扰显示单元

    公开(公告)号:US07193768B2

    公开(公告)日:2007-03-20

    申请号:US10807129

    申请日:2004-03-24

    Applicant: Wen-Jian Lin

    Inventor: Wen-Jian Lin

    CPC classification number: G02B26/001

    Abstract: An optical interference display unit with a first electrode, a second electrode and support structures located between the two electrodes is provided. The second electrode has at least a first material layer and a second material layer. At least one material layer of the two is made from conductive material and the second conductive layer is used as a mask while an etching process is performed to etch the first material layer to define the second electrode.

    Abstract translation: 提供了具有位于两个电极之间的第一电极,第二电极和支撑结构的光学干涉显示单元。 第二电极具有至少第一材料层和第二材料层。 两者的至少一个材料层由导电材料制成,并且第二导电层用作掩模,同时执行蚀刻工艺以蚀刻第一材料层以限定第二电极。

    Thin film transistor liquid crystal display and method for manufacturing the same

    公开(公告)号:US07095465B2

    公开(公告)日:2006-08-22

    申请号:US10139852

    申请日:2002-05-07

    Applicant: Wen-Jian Lin

    Inventor: Wen-Jian Lin

    CPC classification number: G02F1/133553

    Abstract: There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.

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