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170 条记录 (耗时 0.033 秒)

    Non-volatile memory device and method of fabricating the same
    33.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20090261314A1

    公开(公告)日：2009-10-22

    申请号：US12232745

    申请日：2008-09-23

    申请人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo

    发明人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo

    IPC分类号： H01L45/00

    CPC分类号： H01L27/249 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146

    摘要： Provided are a non-volatile memory device that may be configured in a stacked structure and may be more easily highly integrated, and a method of fabricating the non-volatile memory device. At least one first electrode and at least one second electrode are provided. The at least one second electrode may cross the at least one first electrode. At least one data storage layer may be at an intersection between the at least one first electrode and the at least one second electrode. Any one of the at least one first electrode and the at least one second electrode may include at least one junction diode connected to the at least one data storage layer.

    摘要翻译： 提供了可以被配置为堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的方法。 提供至少一个第一电极和至少一个第二电极。 所述至少一个第二电极可以穿过所述至少一个第一电极。 至少一个数据存储层可以在至少一个第一电极和至少一个第二电极之间的交叉点处。 所述至少一个第一电极和所述至少一个第二电极中的任何一个可以包括连接到所述至少一个数据存储层的至少一个结二极管。

    Method of fabricating non-volatile memory device
    34.
    发明申请
    Method of fabricating non-volatile memory device 有权
    制造非易失性存储器件的方法

    公开(公告)号：US20080242011A1

    公开(公告)日：2008-10-02

    申请号：US11978567

    申请日：2007-10-30

    申请人： Seung-hwan Song ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Jae-woong Hyun ,  Choong-ho Lee ,  Tae-hun Kim

    发明人： Seung-hwan Song ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Jae-woong Hyun ,  Choong-ho Lee ,  Tae-hun Kim

    IPC分类号： H01L21/84

    CPC分类号： H01L21/84 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203

    摘要： A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be formed on a bottom surface of the semiconductor layer. A plurality of lower control gate electrodes may be formed on the plurality of lower charge storing layers. A plurality of upper charge storing layers may be formed on a top surface of the semiconductor layer. A plurality of upper control gate electrodes may be formed on the plurality of upper charge storing layers, wherein the plurality of lower and upper control gate electrodes may be arranged alternately.

    摘要翻译： 根据示例性实施例的制造非易失性存储器件的方法可包括在衬底上形成半导体层。 多个下电荷存储层可以形成在半导体层的底表面上。 可以在多个下电荷存储层上形成多个下控制栅电极。 多个上电荷存储层可以形成在半导体层的顶表面上。 多个上部控制栅极电极可以形成在多个上部电荷存储层上，其中多个下部和上部控制栅电极可以交替布置。

    Non-volatile memory devices having data storage layer
    35.
    发明授权
    Non-volatile memory devices having data storage layer 有权
    具有数据存储层的非易失性存储器件

    公开(公告)号：US08283711B2

    公开(公告)日：2012-10-09

    申请号：US12149209

    申请日：2008-04-29

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    IPC分类号： H01L29/792

    CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

    摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

    摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

    Nonvolatile memory devices and methods of fabricating the same
    37.
    发明授权
    Nonvolatile memory devices and methods of fabricating the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US08017477B2

    公开(公告)日：2011-09-13

    申请号：US11704205

    申请日：2007-02-09

    申请人： Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/66621 ,  H01L29/7881 ,  H01L29/792

    摘要： A nonvolatile memory device includes a plurality of first control gate electrodes, second control gate electrodes, first storage node films, and second storage node films. The first control gate electrodes are recessed into a semiconductor substrate. Each second control gate electrode is disposed between two adjacent first control gate electrodes. The second control gate electrodes are disposed on the semiconductor substrate over the first control gate electrodes. The first storage node films are disposed between the semiconductor substrate and the first control gate electrodes. The second storage node films are disposed between the semiconductor substrate and the second control gate electrodes. A method of fabricating the nonvolatile memory device includes forming the first storage node films, forming the first control gate electrodes, forming the second storage node films, and forming the second control gate electrodes.

    摘要翻译： 非易失性存储器件包括多个第一控制栅电极，第二控制栅电极，第一存储节点膜和第二存储节点膜。 第一控制栅电极凹入半导体衬底。 每个第二控制栅电极设置在两个相邻的第一控制栅电极之间。 第二控制栅电极设置在第一控制栅电极上的半导体衬底上。 第一存储节点膜设置在半导体衬底和第一控制栅电极之间。 第二存储节点膜设置在半导体衬底和第二控制栅电极之间。 一种制造非易失性存储器件的方法包括形成第一存储节点膜，形成第一控制栅电极，形成第二存储节点膜，以及形成第二控制栅电极。

    Nonvolatile memory devices and methods of fabricating the same
    40.
    发明申请
    Nonvolatile memory devices and methods of fabricating the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US20080025096A1

    公开(公告)日：2008-01-31

    申请号：US11704205

    申请日：2007-02-09

    申请人： Won-joo Kim ,  Suk-Pil Kim ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Suk-Pil Kim ,  Yoon-dong Park

    IPC分类号： G11C11/34 ,  H01L21/336

    CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/66621 ,  H01L29/7881 ,  H01L29/792

    摘要： A nonvolatile memory device includes a plurality of first control gate electrodes, second control gate electrodes, first storage node films, and second storage node films. The first control gate electrodes are recessed into a semiconductor substrate. Each second control gate electrode is disposed between two adjacent first control gate electrodes. The second control gate electrodes are disposed on the semiconductor substrate over the first control gate electrodes. The first storage node films are disposed between the semiconductor substrate and the first control gate electrodes. The second storage node films are disposed between the semiconductor substrate and the second control gate electrodes. A method of fabricating the nonvolatile memory device includes forming the first storage node films, forming the first control gate electrodes, forming the second storage node films, and forming the second control gate electrodes.

    摘要翻译： 非易失性存储器件包括多个第一控制栅电极，第二控制栅电极，第一存储节点膜和第二存储节点膜。 第一控制栅电极凹入半导体衬底。 每个第二控制栅电极设置在两个相邻的第一控制栅极之间。 第二控制栅电极设置在第一控制栅电极上的半导体衬底上。 第一存储节点膜设置在半导体衬底和第一控制栅电极之间。 第二存储节点膜设置在半导体衬底和第二控制栅电极之间。 一种制造非易失性存储器件的方法包括形成第一存储节点膜，形成第一控制栅电极，形成第二存储节点膜，以及形成第二控制栅电极。