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    Method of fabricating non-volatile memory device
    1.
    发明申请
    Method of fabricating non-volatile memory device 有权
    制造非易失性存储器件的方法

    公开(公告)号：US20080242011A1

    公开(公告)日：2008-10-02

    申请号：US11978567

    申请日：2007-10-30

    申请人： Seung-hwan Song ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Jae-woong Hyun ,  Choong-ho Lee ,  Tae-hun Kim

    发明人： Seung-hwan Song ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Jae-woong Hyun ,  Choong-ho Lee ,  Tae-hun Kim

    IPC分类号： H01L21/84

    CPC分类号： H01L21/84 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203

    摘要： A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be formed on a bottom surface of the semiconductor layer. A plurality of lower control gate electrodes may be formed on the plurality of lower charge storing layers. A plurality of upper charge storing layers may be formed on a top surface of the semiconductor layer. A plurality of upper control gate electrodes may be formed on the plurality of upper charge storing layers, wherein the plurality of lower and upper control gate electrodes may be arranged alternately.

    摘要翻译： 根据示例性实施例的制造非易失性存储器件的方法可包括在衬底上形成半导体层。 多个下电荷存储层可以形成在半导体层的底表面上。 可以在多个下电荷存储层上形成多个下控制栅电极。 多个上电荷存储层可以形成在半导体层的顶表面上。 多个上部控制栅极电极可以形成在多个上部电荷存储层上，其中多个下部和上部控制栅电极可以交替布置。

    Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof
    4.
    发明申请
    Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof 有权
    非易失性存储器件的单元，非易失性存储器件及其方法

    公开(公告)号：US20080025106A1

    公开(公告)日：2008-01-31

    申请号：US11715404

    申请日：2007-03-08

    申请人： Won-joo Kim ,  Suk-pil Kim ,  Jae-woong Hyun ,  Yoon-dong Park ,  June-mo Koo

    发明人： Won-joo Kim ,  Suk-pil Kim ,  Jae-woong Hyun ,  Yoon-dong Park ,  June-mo Koo

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0433 ,  G11C16/0491 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

    摘要： Unit cells of a non-volatile memory device and a method thereof are provided. In an example, the unit cell may include a first memory transistor and a second memory transistor connected to each other in series and further connected in common to a word line, the first and second memory transistors including first and second storage nodes, respectively, the first and second storage nodes configured to execute concurrent memory operations. In another example, the unit cell may include a semiconductor substrate in which first and second bit line regions are defined. first and second storage node layers respectively formed on the semiconductor substrate between the first and second bit line regions, a first pass gate electrode formed on the semiconductor substrate between the first bit line region and the first storage node layer, a second pass gate electrode formed on the semiconductor substrate between the second bit line region and the second storage node layer, a third pass gate electrode formed on the semiconductor substrate between the first and second storage node layers, a third bit line region formed in a portion of the semiconductor substrate under the third pass gate electrode and a control gate electrode extending across the first and second storage node layers. The example unit cells may be implemented within a non-volatile memory device (e.g., a flash memory device), such that the non-volatile memory device may include a plurality of example unit cells.

    摘要翻译： 提供非易失性存储器件的单元电池及其方法。 在一个示例中，单元可以包括串联连接并进一步连接到字线的第一存储晶体管和第二存储晶体管，第一和第二存储晶体管分别包括第一和第二存储节点， 配置为执行并发存储器操作的第一和第二存储节点。 在另一示例中，单元可以包括其中限定了第一和第二位线区域的半导体衬底。 分别形成在第一和第二位线区域之间的半导体衬底上的第一和第二存储节点层，形成在第一位线区域和第一存储节点层之间的半导体衬底上的第一遍栅极电极，形成的第二遍栅极电极 在第二位线区域和第二存储节点层之间的半导体衬底上，形成在第一和第二存储节点层之间的半导体衬底上的第三遍栅极电极，形成在半导体衬底的一部分中的第三位线区域 所述第三通道栅极电极和跨越所述第一和第二存储节点层延伸的控制栅极电极。 示例性单元单元可以在非易失性存储器件（例如，闪存器件）内实现，使得非易失性存储器件可以包括多个示例单位单元。

    Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof
    5.
    发明授权
    Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof 有权
    非易失性存储器件的单元，非易失性存储器件及其方法

    公开(公告)号：US07551491B2

    公开(公告)日：2009-06-23

    申请号：US11715404

    申请日：2007-03-08

    申请人： Won-joo Kim ,  Suk-pil Kim ,  Jae-woong Hyun ,  Yoon-dong Park ,  June-mo Koo

    发明人： Won-joo Kim ,  Suk-pil Kim ,  Jae-woong Hyun ,  Yoon-dong Park ,  June-mo Koo

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0433 ,  G11C16/0491 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

    摘要： Unit cells of a non-volatile memory device and a method thereof are provided. In an example, the unit cell may include a first memory transistor and a second memory transistor connected to each other in series and further connected in common to a word line, the first and second memory transistors including first and second storage nodes, respectively, the first and second storage nodes configured to execute concurrent memory operations. In another example, the unit cell may include a semiconductor substrate in which first and second bit line regions are defined, first and second storage node layers respectively formed on the semiconductor substrate between the first and second bit line regions, a first pass gate electrode formed on the semiconductor substrate between the first bit line region and the first storage node layer, a second pass gate electrode formed on the semiconductor substrate between the second bit line region and the second storage node layer, a third pass gate electrode formed on the semiconductor substrate between the first and second storage node layers, a third bit line region formed in a portion of the semiconductor substrate under the third pass gate electrode and a control gate electrode extending across the first and second storage node layers. The example unit cells may be implemented within a non-volatile memory device (e.g., a flash memory device), such that the non-volatile memory device may include a plurality of example unit cells.

    摘要翻译： 提供非易失性存储器件的单元电池及其方法。 在一个示例中，单元可以包括串联连接并进一步连接到字线的第一存储晶体管和第二存储晶体管，第一和第二存储晶体管分别包括第一和第二存储节点， 配置为执行并发存储器操作的第一和第二存储节点。 在另一示例中，单元可以包括其中限定了第一和第二位线区域的半导体衬底，分别形成在第一和第二位线区域之间的半导体衬底上的第一和第二存储节点层，形成的第一遍栅极电极 在第一位线区域和第一存储节点层之间的半导体衬底上，形成在第二位线区域和第二存储节点层之间的半导体衬底上的第二遍栅极电极，形成在半导体衬底上的第三栅极电极 在所述第一和第二存储节点层之间形成第三位线区域，所述第三位线区域形成在所述第三栅极电极下方的所述半导体衬底的一部分中，以及跨越所述第一和第二存储节点层延伸的控制栅电极。 示例性单元单元可以在非易失性存储器件（例如，闪存器件）内实现，使得非易失性存储器件可以包括多个示例单位单元。