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    METHOD OF MANUFACTURING THIN FILM
    31.
    发明申请
    METHOD OF MANUFACTURING THIN FILM 有权
    制造薄膜的方法

    公开(公告)号：US20120148746A1

    公开(公告)日：2012-06-14

    申请号：US13392433

    申请日：2011-06-01

    申请人： Kazuyoshi Honda ,  Kunihiko Bessho ,  Takashi Shimada

    发明人： Kazuyoshi Honda ,  Kunihiko Bessho ,  Takashi Shimada

    IPC分类号： C23C16/448 ,  C23C16/455

    CPC分类号： C23C14/24 ,  C23C14/243 ,  C23C14/542 ,  C23C14/562 ,  H01M4/0423 ,  H01M4/1391 ,  H01M4/1395

    摘要： The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film formation is performed in a state where the opening surface 14 of the evaporation source 19 holding the heated film formation material is located close to the substrate 21 while evacuating the evaporation chamber 16 and the film forming chamber 17 without shutting off communication between the evaporation chamber 16 and the film forming chamber 17 by the conductance variable structure 34. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamber 16 and the film forming chamber 17 to adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation source 19 is moved by the moving mechanism 35 such that the opening surface 14 is located away from the substrate 21. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber 16.

    摘要翻译： 本发明提供一种薄膜制造方法，其使用喷嘴型蒸发源实现稳定，高效的成膜，同时避免成膜材料终止后不必要的成膜材料的散射和沉积。 使用的成膜装置包括：蒸发室16; 设置有基板21的成膜室17; 保持成膜材料15并包括开口表面14的蒸发源19; 构造成使蒸发源19移动的移动机构35; 和导电可变结构34.成膜是在保持加热成膜材料的蒸发源19的开口表面14位于靠近基板21的同时抽空蒸发室16和成膜室17的状态下进行的 而不用电导可变结构34关闭蒸发室16和成膜室17之间的连通。接下来，通过向蒸发室16和成膜室17引入非反应性气体来抑制成膜材料的蒸发， 将每个室中的压力调节至预定压力或更大。 然后，蒸发源19被移动机构35移动，使得开口表面14远离基板21.导电可变结构被激活以切断这些室之间的连通，并且成膜材料被冷却，同时 将非反应性气体连续引入蒸发室16。

    DEPOSITION QUANTITY MEASURING APPARATUS, DEPOSITION QUANTITY MEASURING METHOD, AND METHOD FOR MANUFACTURING ELECTRODE FOR ELECTROCHEMICAL ELEMENT
    34.
    发明申请
    DEPOSITION QUANTITY MEASURING APPARATUS, DEPOSITION QUANTITY MEASURING METHOD, AND METHOD FOR MANUFACTURING ELECTRODE FOR ELECTROCHEMICAL ELEMENT 有权
    沉积量测量装置，沉积量测量方法和电化学元件电极制造方法

    公开(公告)号：US20120121794A1

    公开(公告)日：2012-05-17

    申请号：US13384928

    申请日：2010-07-02

    申请人： Hiromasa Yagi ,  Kazuyoshi Honda

    发明人： Hiromasa Yagi ,  Kazuyoshi Honda

    IPC分类号： C23C16/52 ,  B05D5/12 ,  H01J37/26

    CPC分类号： H01M4/139 ,  C23C14/14 ,  C23C14/545 ,  C23C14/562 ,  H01G11/22 ,  H01G11/50 ,  H01G11/86 ,  H01M4/0423 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54

    摘要： A manufacturing method according to the present invention includes a step of allowing lithium to deposit on a substrate provided with a layer capable of forming a compound together with lithium. A first beta ray and a second beta ray are emitted toward the substrate for irradiation before the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. The first beta ray and the second beta ray are emitted toward the substrate for irradiation after the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. A decrement in backscattering of the first beta ray before and after lithium deposition and a decrement in backscattering of the second beta ray before and after lithium deposition are calculated. The deposition step is controlled depending on the decrement in the backscattering of the first beta ray and the decrement in the backscattering of the second beta ray.

    摘要翻译： 根据本发明的制造方法包括允许锂沉积在具有与锂一起形成化合物的层的基材上的步骤。 在沉积步骤之前，向衬底发射第一个β射线和第二个β射线，以便从衬底测量第一个β射线和第二个β射线的反向散射。 第一β射线和第二β射线在沉积步骤之后朝向衬底发射用于照射，以测量来自衬底的第一β射线和第二β射线的后向散射。 计算在锂沉积之前和之后第一次β射线的后向散射减少以及在锂沉积之前和之后的第二次β射线的后向散射的减小。 沉积步骤根据第一β射线的反向散射的减小和第二β射线的后向散射的减量来控制。

    Negative electrode for lithium secondary battery, lithium secondary battery using same, and methods for manufacturing those
    36.
    发明授权
    Negative electrode for lithium secondary battery, lithium secondary battery using same, and methods for manufacturing those 有权
    锂二次电池用负极，使用其的锂二次电池及其制造方法

    公开(公告)号：US08076027B2

    公开(公告)日：2011-12-13

    申请号：US11814694

    申请日：2006-01-23

    申请人： Kazuyoshi Honda ,  Yuuko Ogawa ,  Yasutaka Kogetsu

    发明人： Kazuyoshi Honda ,  Yuuko Ogawa ,  Yasutaka Kogetsu

    IPC分类号： H01M4/58

    CPC分类号： H01M10/0525 ,  H01M2/16 ,  H01M4/1315 ,  H01M4/134 ,  H01M4/386 ,  H01M4/387 ,  H01M4/66 ,  Y10T29/49115

    摘要： A negative electrode for a secondary battery includes a separator; a negative electrode active material layer which is fixed to the separator and can store and emit lithium ions; and a current collector layer formed on the side of the separator opposite to the negative electrode active material layer. The negative electrode active material layer contains at least one selected from the group consisting of silicon, silicon alloys, compounds containing silicon and oxygen, compounds containing silicon and nitrogen, compounds containing silicon and fluorine, tin, tin alloys, compounds containing tin and oxygen, compounds containing tin and nitrogen, and compounds containing tin and fluorine.

    摘要翻译： 二次电池用负极包括隔板; 负极活性物质层，其固定在隔板上并能够存储和放出锂离子; 以及形成在隔板的与负极活性物质层相反的一侧的集电体层。 负极活性物质层含有选自硅，硅合金，含硅和氧的化合物，含硅和氮的化合物，含硅和氟的化合物，锡，锡合金，含锡和氧的化合物中的至少一种， 含锡和氮的化合物，以及含锡和氟的化合物。

    METHOD FOR FORMING DEPOSITED FILM
    37.
    发明申请
    METHOD FOR FORMING DEPOSITED FILM 审中-公开
    形成沉积膜的方法

    公开(公告)号：US20110014519A1

    公开(公告)日：2011-01-20

    申请号：US12866652

    申请日：2009-02-06

    申请人： Sadayuki Okazaki ,  Kazuyoshi Honda

    发明人： Sadayuki Okazaki ,  Kazuyoshi Honda

    IPC分类号： H01M4/02 ,  H01M4/04

    CPC分类号： C23C14/225 ,  C23C14/562 ,  H01M10/0525 ,  H01M10/058

    摘要： The present invention provides a vacuum deposition apparatus configured to simultaneously form a power collecting lead forming portion and an electrode active material portion of a lithium-ion secondary battery and having excellent mass productivity. With shutters 12a and 12b closed, a substrate 4 winding around a first roll 3 is unroll to be conveyed to a second roll 8, and the substrate 4 stops when it reaches first and second deposition possible regions 60a and 60b. Here, the shutter 12a opens, and a deposition material in a crucible of an evaporation source 9 is evaporated to be supplied to a surface of the substrate 4 which is located in the first deposition possible region 60a. With this, a first layer is formed as a deposited film on the surface of the substrate 4. After the deposition is carried out with respect to the substrate 4 for a predetermined period of time, the shutter 12a is closed. Next, the substrate 4 is again conveyed and stops when the portion on which the deposition has been carried out in the first deposition possible region 60a has reached the second deposition possible region 60b. The shutters 12a and 12b open, and the deposition is carried out again. Thus, the first layer is formed in the first deposition possible region 60a, and the second layer having a different growth direction from the first layer is formed as the deposited film on the first layer in the second deposition possible region 60b.

    摘要翻译： 本发明提供一种真空沉积装置，其配置为同时形成锂离子二次电池的集电引线形成部分和电极活性材料部分，并且具有优异的批量生产率。 随着快门12a和12b关闭，围绕第一辊3卷绕的基板4被展开以被输送到第二辊8，并且当基板4到达第一和第二可沉积可能区域60a和60b时停止。 这里，快门12a打开，并且蒸发源9的坩埚中的沉积材料被蒸发以供应到位于第一沉积可能区域60a中的基板4的表面。 由此，在基板4的表面上形成作为沉积膜的第一层。在相对于基板4进行预定时间的沉积之后，关闭闸门12a。 接下来，当在第一沉积可能区域60a中已经进行沉积的部分已经到达第二沉积可能区域60b时，基板4再次被传送并停止。 快门12a和12b打开，再次进行沉积。 因此，第一层形成在第一沉积可能区域60a中，并且具有与第一层不同的生长方向的第二层作为沉积膜形成在第二沉积可能区域60b中的第一层上。

    METHOD FOR MANUFACTURING ELECTROCHEMICAL ELEMENT ELECTRODE
    38.
    发明申请
    METHOD FOR MANUFACTURING ELECTROCHEMICAL ELEMENT ELECTRODE 审中-公开
    电化学元件电极的制造方法

    公开(公告)号：US20100330420A1

    公开(公告)日：2010-12-30

    申请号：US12865076

    申请日：2008-12-16

    申请人： Yuko Ogawa ,  Kazuyoshi Honda

    发明人： Yuko Ogawa ,  Kazuyoshi Honda

    IPC分类号： H01M4/13 ,  H01M4/04 ,  B05D5/12

    CPC分类号： H01M4/70 ,  H01M4/0421 ,  H01M4/133 ,  H01M4/1391 ,  H01M4/1393 ,  H01M10/0525

    摘要： Includes the steps of preparing a sheet-like current collector 4 having a plurality of bumps 4A on a surface thereof, the plurality of bumps having a height of 3 μm or greater and 10 μm or less; and forming an active material body having a stacked structure on each of the bumps 4A of the current collector 4. The step of forming the active material body includes a first layer vapor deposition step of causing a vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined with respect to the normal H to the current collector 4 to form a first layer 101a of the active material body on each bump 4A, the first layer 101a being located closest to the current collector; and a second layer vapor deposition step of causing the vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined, with respect to the normal H to the current collector 4, opposite to the incidence direction of the vapor deposition material in the first layer vapor deposition step to form a second layer 102a on at least a part of the first layer 101a. In the first layer vapor deposition step, vapor deposition is performed while moving the current collector 4 in a direction in which the incidence angle ω of the vapor deposition material with respect to the normal H to the current collector 4 is decreased.

    摘要翻译： 包括在其表面上制备具有多个凸起4A的片状集电体4的步骤，多个凸起的高度为3μm以上且10μm以下; 并且在集电体4的每个凸起4A上形成具有层叠结构的活性物质体。形成活性物质体的步骤包括使蒸发的气相沉积材料入射到表面上的第一层气相沉积步骤 在相对于集电体4相对于法线H倾斜的方向上形成集电体4，以在每个凸块4A上形成活性物质体的第一层101a，第一层101a位于最靠近集电体的位置; 以及第二层气相沉积步骤，使蒸发的气相沉积材料以相对于集电体4的法线H倾斜的方向入射在集电体4的表面上，该方向与蒸气的入射方向相反 沉积材料在第一层气相沉积步骤中以在第一层101a的至少一部分上形成第二层102a。 在第一层气相沉积步骤中，在使集电体4沿蒸镀材料相对于正常H的入射角ω向集电体4减小的方向移动的同时进行蒸镀。

    ELECTRICITY STORAGE DEVICE
    39.
    发明申请
    ELECTRICITY STORAGE DEVICE 有权
    电力存储设备

    公开(公告)号：US20090246631A1

    公开(公告)日：2009-10-01

    申请号：US12466112

    申请日：2009-05-14

    申请人： Nobuhiko Hojo ,  Yu Ohtsuka ,  Shoichiro Watanabe ,  Kazuyoshi Honda

    发明人： Nobuhiko Hojo ,  Yu Ohtsuka ,  Shoichiro Watanabe ,  Kazuyoshi Honda

    IPC分类号： H01M4/60 ,  H01M4/58

    CPC分类号： H01M10/0525 ,  H01G11/26 ,  H01G11/28 ,  H01G11/32 ,  H01G11/50 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/382 ,  H01M4/386 ,  H01M4/387 ,  H01M4/483 ,  H01M4/587 ,  H01M4/64 ,  H01M4/70 ,  H01M12/005 ,  H01M2004/021 ,  H01M2010/4292 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

    摘要： Disclosed is an electricity storage device which can be charged/discharged at high rate and have high output, high capacity and excellent repeating charge/discharge characteristics, although it uses a non-carbon material as a negative electrode active material. Specifically disclosed is an electricity storage device comprising: a positive electrode collector; a positive electrode disposed on the positive electrode collector and including a positive electrode active material which can reversibly absorb/desorb at least anions; a negative electrode collector; and a negative electrode disposed on the negative electrode collector and including a negative electrode active material which can substantially absorb/desorb lithium ions reversibly. The negative electrode active material is composed of at least one substance selected from the group consisting of silicon, a silicon-containing alloy, a silicon compound, tin, a tin-containing alloy, and a tin compound; and the negative electrode is formed as a thin film having a thickness of 10 μm or less.

    摘要翻译： 公开了尽管使用非碳材料作为负极活性物质，但是可以高速率充放电且具有高输出，高容量和优异的重复充电/放电特性的蓄电装置。 具体公开了一种蓄电装置，其特征在于，包括：正极集电体; 正电极，设置在所述正极集电体上，并且包括可以可逆地吸收/解吸至少阴离子的正极活性物质; 负极集电体; 和设置在负极集电体上的负极，其具有能够可逆地实质上吸收/解吸锂离子的负极活性物质。 负极活性物质由选自硅，含硅合金，硅化合物，锡，含锡合金和锡化合物的至少一种物质构成; 并且负极形成为厚度为10μm以下的薄膜。