公开(公告)号：US07851840B2

公开(公告)日：2010-12-14

申请号：US11520868

申请日：2006-09-13

申请人： Zhitao Diao ,  Yiming Huai

发明人： Zhitao Diao ,  Yiming Huai

IPC分类号： H01L29/96 ,  H01L43/08

CPC分类号： H01L43/08 ,  G11C11/16

摘要： Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.

摘要翻译： 具有磁或磁阻隧道结（MTJS）的器件具有多层绝缘体阻挡层，以在器件电路中产生平衡的写入开关电流，或者产生具有自旋转矩传递感应开关磁化所需的平衡临界自旋电流的磁性器件，或 对于正向和反向偏置方向的MTJ都是这样。

公开(公告)号：US07777261B2

公开(公告)日：2010-08-17

申请号：US11232356

申请日：2005-09-20

申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

IPC分类号： H01L29/94

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11B5/3983 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/10

摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.

摘要翻译： 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

公开(公告)号：US20100072524A1

公开(公告)日：2010-03-25

申请号：US12425370

申请日：2009-04-16

申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.

摘要翻译： 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

公开(公告)号：US07369427B2

公开(公告)日：2008-05-06

申请号：US10938219

申请日：2004-09-09

申请人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul P. Nguyen ,  Mahendra Pakala

发明人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul P. Nguyen ,  Mahendra Pakala

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/30 ,  H01F41/302 ,  H01L43/10

摘要： A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

摘要翻译： 一种方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。 间隔层是非磁性的。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。 在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。 旋转工程层被配置为比少数电子更强烈地散射多数电子。 在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。 在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

公开(公告)号：US20060049472A1

公开(公告)日：2006-03-09

申请号：US10938219

申请日：2004-09-09

申请人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

发明人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/30 ,  H01F41/302 ,  H01L43/10

摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。 间隔层是非磁性的。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。 在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。 旋转工程层被配置为比少数电子更强烈地散射多数电子。 在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。 在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

公开(公告)号：US08913350B2

公开(公告)日：2014-12-16

申请号：US12538489

申请日：2009-08-10

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang

IPC分类号： G11B5/33 ,  B82Y40/00 ,  G11C11/16 ,  H01L43/08 ,  G01R33/09 ,  B82Y25/00 ,  H01F41/30 ,  H01F10/32 ,  H01F41/34

CPC分类号： G01R33/098 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01F41/325 ,  H01F41/34 ,  H01L43/08

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

摘要翻译： 描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。 磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。 该方法和系统包括提供固定，非磁性间隔物和自由层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。 垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。 磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

公开(公告)号：US08582253B1

公开(公告)日：2013-11-12

申请号：US13488219

申请日：2012-06-04

申请人： Yuankai Zheng ,  Qunwen Leng ,  Mahendra Pakala ,  Zhitao Diao ,  Christian Kaiser ,  Cheng-Han Yang

发明人： Yuankai Zheng ,  Qunwen Leng ,  Mahendra Pakala ,  Zhitao Diao ,  Christian Kaiser ,  Cheng-Han Yang

IPC分类号： G11B5/39

CPC分类号： G11B5/3967 ,  G01R33/093 ,  G01R33/098 ,  G11B5/1278 ,  G11B5/3906 ,  H01L43/08

摘要： A magnetic sensor configured to reside in proximity to a recording medium during use having a high spin polarization reference layer stack above AFM layers. The reference layer stack comprises a first boron-free ferromagnetic layer above the AFM coupling layer; a magnetic coupling layer on and in contact with the first boron-free ferromagnetic layer; a second ferromagnetic layer comprising boron deposited on and contact with the magnetic coupling layer; and a boron-free third ferromagnetic layer on and in contact the second ferromagnetic layer. A barrier layer is deposited on and in contact with the boron-free third ferromagnetic layer. In one aspect of the invention, the magnetic coupling layer may comprise at least one of Ta, Ti, or Hf. A process for providing the magnetic sensor is also provided.

摘要翻译： 磁传感器被配置为在使用期间驻留在记录介质附近，在AFM层上方具有高自旋极化参考层堆叠。 参考层堆叠包括在AFM耦合层上方的第一无硼铁磁层; 与第一无硼铁磁层接触并与之接触的磁耦合层; 第二铁磁层，其包含沉积在磁耦合层上并与其接触的硼; 以及在第二铁磁层上并与之接触的无硼第三铁磁层。 阻挡层沉积在无硼第三铁磁层上并与无硼第三铁磁层接触。 在本发明的一个方面，磁耦合层可以包括Ta，Ti或Hf中的至少一种。 还提供了一种用于提供磁传感器的过程。

公开(公告)号：US20120155156A1

公开(公告)日：2012-06-21

申请号：US13035726

申请日：2011-02-25

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

IPC分类号： G11C11/02 ,  G11B5/84 ,  G11B5/64

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01F41/325 ,  H01F41/34

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

摘要翻译： 描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。 磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。 该方法和系统包括提供固定，非磁性间隔物和自由层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。 垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。 磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

公开(公告)号：US20110031569A1

公开(公告)日：2011-02-10

申请号：US12776331

申请日：2010-05-07

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L27/224 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01F41/34 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

公开(公告)号：US10446209B2

公开(公告)日：2019-10-15

申请号：US13035726

申请日：2011-02-25

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

IPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01F41/34

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.