公开(公告)号：US07084016B1

公开(公告)日：2006-08-01

申请号：US09352194

申请日：1999-07-13

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/3247 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/665 ,  H01L29/66757 ,  H01L29/78645 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). Then, the crystalline semiconductor thin film (102) is subjected to a heat treatment at a temperature of 900 to 1200° C. in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

公开(公告)号：US06911698B2

公开(公告)日：2005-06-28

申请号：US10678168

申请日：2003-10-06

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

IPC分类号： H01L21/20 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L27/01 ,  H01L31/0392 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/3247 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/665 ,  H01L29/66757 ,  H01L29/78645 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). Then, the crystalline semiconductor thin film (102) is subjected to a heat treatment at a temperature of 900 to 1200° C. in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 用紫外光或红外光照射非晶半导体薄膜，得到结晶半导体薄膜（102）。 然后，在还原气氛中，在900〜1200℃的温度下对晶体半导体薄膜（102）进行热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

公开(公告)号：US06872638B2

公开(公告)日：2005-03-29

申请号：US10078240

申请日：2002-02-20

申请人： Shunpei Yamazaki ,  Toru Mitsuki ,  Tamae Takano

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Tamae Takano

IPC分类号： H01L21/324 ,  B23K26/073 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/2022 ,  H01L21/2026

摘要： A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate and the semiconductor film is precipitous, distortions may develop in the semiconductor film. Thus, the film quality of the crystalline semiconductor film obtained will drop in some cases. With the present invention, distortions of the semiconductor film are reduced by heating the semiconductor film using a heat treatment process after performing crystallization of the semiconductor film using laser light. Compared to the localized heating due to the irradiation of laser light, the heat treatment process is performed over the entire substrate and semiconductor film. Therefore, it is possible to reduce distortions formed in the semiconductor film and to increase the physical properties of the semiconductor film.

摘要翻译： 作为使半导体膜结晶化的方法，提供了进行激光照射的方法。 然而，如果激光照射到半导体膜上，则半导体膜瞬间熔化并局部膨胀。 衬底和半导体膜之间的温度梯度是陡峭的，半导体膜中可能会发生变形。 因此，获得的结晶半导体膜的膜质量在某些情况下将下降。 通过本发明，通过使用激光进行半导体膜的结晶后，使用热处理工艺来加热半导体膜来减小半导体膜的失真。 与通过照射激光的局部加热相比，在整个基板和半导体膜上进行热处理工艺。 因此，可以减少形成在半导体膜中的失真并增加半导体膜的物理性能。

公开(公告)号：US06864127B2

公开(公告)日：2005-03-08

申请号：US10357333

申请日：2003-02-04

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

IPC分类号： G02B5/30 ,  G02B27/00 ,  G02B27/01 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L21/00

CPC分类号： G02B27/017 ,  G02B5/30 ,  G02B2027/0138 ,  G02F1/13454 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757

摘要： There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

摘要翻译： 公开了用于提供用于制造半导体器件的简化工艺顺序的技术。 该顺序开始于形成含硅的非晶膜。 然后，在非晶膜上形成具有开口的绝缘膜。 通过开口引入催化元素以进行结晶。 此后，在绝缘膜中形成窗口，并注入P离子。 该工艺步骤同时形成两种区域（即，用于吸收催化元素的吸气区域和稍后将成为每个辅助电容器的下电极的区域）。

公开(公告)号：US06787807B2

公开(公告)日：2004-09-07

申请号：US09882265

申请日：2001-06-18

申请人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara ,  Taketomi Asami ,  Tamae Takano ,  Takeshi Shichi ,  Chiho Kokubo

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara ,  Taketomi Asami ,  Tamae Takano ,  Takeshi Shichi ,  Chiho Kokubo

IPC分类号： H01L2904

CPC分类号： H01L29/78696 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78684

摘要： The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the {101} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the {001} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the {111} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.

摘要翻译： 通过使非晶半导体膜结晶而获得的结晶半导体膜的取向得到改善，并且提供了由该结晶半导体膜形成的TFT。 在其TFT由主要含硅的半导体层形成的半导体器件中，半导体层具有沟道形成区和掺杂有一种导电类型的杂质的杂质区。 沟道形成区域的20％以上是相对于结晶半导体膜的表面形成等于或小于10度的角度的{101}晶格面，通过电子反向散射衍射图法检测的平面 ，3％以下的沟道形成区域相对于结晶半导体膜的表面形成等于或小于10度的{001}晶格面，5％以下的沟道形成区域为 相对于晶体半导体膜的表面形成等于或小于10度的角度的{111}晶格面。

公开(公告)号：US6165824A

公开(公告)日：2000-12-26

申请号：US34041

申请日：1998-03-03

申请人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

发明人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

摘要： A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

公开(公告)号：US08143625B2

公开(公告)日：2012-03-27

申请号：US12574162

申请日：2009-10-06

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

IPC分类号： H01L29/04

CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

公开(公告)号：US07709883B2

公开(公告)日：2010-05-04

申请号：US11802463

申请日：2007-05-23

申请人： Tamae Takano ,  Atsushi Tokuda ,  Ryota Tajima ,  Shunpei Yamazaki

发明人： Tamae Takano ,  Atsushi Tokuda ,  Ryota Tajima ,  Shunpei Yamazaki

IPC分类号： H01L29/788

CPC分类号： H01L27/11526 ,  G11C16/0416 ,  G11C16/0433 ,  G11C16/0483 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11546 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/792

摘要： An object is to provide a nonvolatile semiconductor memory device which is excellent in a writing property and a charge retention property. In addition, another object is to provide a nonvolatile semiconductor memory device capable of reducing writing voltage. A nonvolatile semiconductor memory device includes a semiconductor layer or a semiconductor substrate including a channel formation region between a pair of impurity regions that are formed apart from each other, and a first insulating layer, a plurality of layers formed of different nitride compounds, a second insulating layer, and a control gate that are formed in a position which is over the semiconductor layer or the semiconductor substrate and overlaps with the channel formation region.

摘要翻译： 目的在于提供一种写入特性和电荷保持性优异的非易失性半导体存储器件。 此外，另一个目的是提供一种能够降低写入电压的非易失性半导体存储器件。 非易失性半导体存储器件包括半导体层或半导体衬底，该半导体层或半导体衬底包括在彼此分开形成的一对杂质区之间的沟道形成区，以及第一绝缘层，由不同的氮化物形成的多个层，第二 绝缘层和控制栅极，其形成在半导体层或半导体衬底上方并与沟道形成区域重叠的位置。

公开(公告)号：US07618904B2

公开(公告)日：2009-11-17

申请号：US11498064

申请日：2006-08-03

申请人： Shunpei Yamazaki ,  Toru Mitsuki ,  Tamae Takano

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Tamae Takano

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/324 ,  H01L21/477 ,  H01L21/00

CPC分类号： H01L29/66757

摘要： When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film contracts, so that a warp in the film occurs. Therefore, the quality of a resulting crystalline semiconductor film sometimes deteriorates. According to the present invention, it is characterized in that, after laser beam crystallization on the semiconductor film, heat treatment is carried out so as to reduce the warp in the film. Since the substrate contracts by the heat treatment, the warp in the semiconductor film is lessened, so that the physical properties of the semiconductor film can be improved.

公开(公告)号：US07575985B2

公开(公告)日：2009-08-18

申请号：US11601699

申请日：2006-11-20

申请人： Shunpei Yamazaki ,  Tamae Takano ,  Koji Dairiki

发明人： Shunpei Yamazaki ,  Tamae Takano ,  Koji Dairiki

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/3221 ,  H01L21/3226 ,  H01L21/67115 ,  H01L27/1277 ,  H01L27/1285

摘要： In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization of a semiconductor film and gettering treatment of a catalytic element used for the crystallization by a heating treatment in a short time without deforming the substrate. A heating treatment method of the present invention is characterized in that a light source is controlled in a pulsed manner to irradiate a semiconductor film, so that a heating treatment of the semiconductor film is efficiently carried out in a short time, and damage of the substrate due to heat is prevented.

摘要翻译： 在使用玻璃基板等低耐热性的基板的半导体装置的制造方法中，提供了有效地进行半导体膜的结晶化的方法，并且通过加热对用于结晶的催化剂元素进行吸气处理 在短时间内处理而不使基材变形。 本发明的加热处理方法的特征在于，以脉冲方式控制光源照射半导体膜，使得半导体膜的加热处理在短时间内有效地进行，并且基板的损坏 由于防止了热量。